Abstract: An optical scanning device includes a reflector as a MEMS mirror having a reflection surface of a metal film, a support body, a drive beam, and a drive unit. The support body is disposed to be spaced from the reflector so as to surround the reflector. The drive beam connects the reflector and the support body. A first protection film is formed all over opposite side surfaces including side wall surfaces of a second semiconductor layer, as well as an upper surface and a lower surface, in the drive beam. As the first protection film, a silicon oxide film, a silicon nitride film, an alumina film, or a titania film is formed by an atomic layer deposition method.

Abstract: An optical scanning device includes a reflector, a rotator, a first torsion beam and a second torsion beam, a first support part, a second support part, a first elastic layer, and a second elastic layer. The first elastic layer is superposed on the first torsion beam. The second elastic layer is superposed on the second torsion beam. A vertical dimension of an active layer is smaller than a horizontal dimension of the active layer in a cross section orthogonal to a direction in which the rotator is interposed between the first torsion beam and the second torsion beam. A material of the first elastic layer and the second elastic layer is higher in fatigue life than metal.

Abstract: The obstacle detection apparatus mainly includes an optical deflector, a first reflection mirror, a second reflection mirror, and a light receiver. The first reflection mirror is arranged to face the optical deflector. The second reflection mirror is arranged at one side of the first reflection mirror further from the optical deflector. The optical deflector scans a light beam conically about a first axis. The first reflection mirror and the second reflection mirror are driven to rotate about a second axis in synchronization with each other. The second axis is coaxial with the first axis.

Abstract: An optical scanning device includes a first structure and a second structure. The first structure includes a support, a driver, a first columnar body, a driving section, and a pair of beams. The support includes a support body and a flat section. The pair of beams connects the driver and the flat section. The driving section includes a coil, a pair of electrode pads, and a magnet. The second structure is provided with a reflector.

Abstract: A MEMS mirror device includes a frame body (an outer movable frame body), an inner movable member, a first beam, a reflective mirror member, and a coupling member. The inner movable member is disposed inside the frame body. The first beam couples the inner movable member rotatably to the frame body. The reflective mirror member has a reflective surface and a rear surface. The coupling member couples the reflective mirror member and the inner movable member. The first beam is coupled to the inner movable member at the rear surface of the reflective mirror member. The MEMS mirror device may be reduced in size.

Abstract: An optical scanning device includes a mirror part having a mirror surface configured to reflect light, N support cantilevers supporting the mirror part swingably, N drive cantilevers, and a plurality of driving piezoelectric elements secured on N drive cantilevers. The mirror part precesses by setting the frequency of AC voltage applied to each of a plurality of piezoelectric elements to a determined common value and setting the phase of AC voltage applied to each of a plurality of piezoelectric elements to a value determined according to the position of each piezoelectric element.

Abstract: An optical scanning device includes a mirror part having a mirror surface configured to reflect light, N support cantilevers supporting the mirror part swingably, N drive cantilevers, and a plurality of driving piezoelectric elements secured on N drive cantilevers. The mirror part precesses by setting the frequency of AC voltage applied to each of a plurality of piezoelectric elements to a determined common value and setting the phase of AC voltage applied to each of a plurality of piezoelectric elements to a value determined according to the position of each piezoelectric element.

Abstract: An optoelectronic semiconductor device is disclosed. The optoelectronic semiconductor device includes a matrix substrate including a matrix circuit and a substrate, and a plurality of microsized optoelectronic semiconductor elements disposed separately and disposed on the matrix circuit. Each of the microsized optoelectronic semiconductor elements includes a first electrode and a second electrode, the matrix circuit includes a plurality of third electrodes and a plurality of fourth electrodes. The first electrodes are coupled with and electrically connected with the third electrodes respectively, or the second electrodes are coupled with and electrically connected with the fourth electrodes respectively. Reflectivities of at least some of junctions between the first electrode and the third electrode, or reflectivities of at least some of junctions between the second electrode and the fourth electrode are less than 20%.

Abstract: An optoelectronic semiconductor device is disclosed. The optoelectronic semiconductor device includes a matrix substrate including a matrix circuit and a substrate, and a plurality of microsized optoelectronic semiconductor elements disposed separately and disposed on the matrix circuit. Each of the microsized optoelectronic semiconductor elements includes a first electrodeand a second electrode, the matrix circuit includes a plurality of third electrodes and a plurality of fourth electrodes. The first electrodes are coupled with and electrically connected with the third electrodes respectively, or the second electrodes are coupled with and electrically connected with the fourth electrodes respectively. Reflectivities of at least some of junctions between the first electrode and the third electrode, or reflectivities of at least some of junctions between the second electrode and the fourth electrode are less than 20%.

Abstract: A method of manufacturing an organic EL element includes forming a first electrode corresponding to a color of a constituent pixel on a substrate; forming a hole injection layer; forming a hole transport layer; forming a host material layer to cause a dopant material to diffuse on the side of the substrate on which the hole transport layer is formed; bringing the host material layer into contact with a dopant material side of a donor substrate in which the dopant material is formed on a metal layer; applying a current in a stacking direction between the first electrode corresponding to the pixel of the color corresponding to the dopant material and the metal layer; separating the donor substrate from the substrate; and forming a second electrode on the side on which the host material layer in which the dopant material has diffused is formed.

Abstract: An optoelectronic semiconductor device and a manufacturing method are disclosed. The manufacturing method includes steps of: a step of providing a microsized optoelectronic semiconductor element, a step of providing a matrix substrate, a step of electrode alignment and lamination, a step of electrode coupling, a step of illumination and lift-off and a step of removal. The step of electrode coupling is to provide a first light to concentratedly illuminate at least some of the junctions between the first electrodes and the third electrodes or concentratedly illuminate at least some of the junctions between the second electrodes and the fourth electrodes. The step of illumination and lift-off is to provide a second light to concentratedly illuminate at least some of the interfaces between the microsized optoelectronic semiconductor elements and the epitaxial substrate to peel off the microsized optoelectronic semiconductor elements from the epitaxial substrate.

Abstract: A method of manufacturing an organic EL element includes forming a first electrode corresponding to a color of a constituent pixel on a substrate; forming a hole injection layer; forming a hole transport layer; forming a host material layer to cause a dopant material to diffuse on the side of the substrate on which the hole transport layer is formed; bringing the host material layer into contact with a dopant material side of a donor substrate in which the dopant material is formed on a metal layer; applying a current in a stacking direction between the first electrode corresponding to the pixel of the color corresponding to the dopant material and the metal layer; separating the donor substrate from the substrate; and forming a second electrode on the side on which the host material layer in which the dopant material has diffused is formed.

Abstract: An optoelectronic semiconductor device and a manufacturing method are disclosed. The manufacturing method includes steps of: a step of providing a microsized optoelectronic semiconductor element, a step of providing a matrix substrate, a step of electrode alignment and lamination, a step of electrode coupling, a step of illumination and lift-off and a step of removal. The step of electrode coupling is to provide a first light to concentratedly illuminate at least some of the junctions between the first electrodes and the third electrodes or concentratedly illuminate at least some of the junctions between the second electrodes and the fourth electrodes. The step of illumination and lift-off is to provide a second light to concentratedly illuminate at least some of the interfaces between the microsized optoelectronic semiconductor elements and the epitaxial substrate to make the microsized optoelectronic semiconductor elements illuminated by the second light peel off the epitaxial substrate.

Abstract: A deposition mask for forming a thin film pattern having a predetermined shape on a substrate by deposition, includes a resin film that transmits visible light and has an opening pattern penetrating through the resin film and having the same shape and dimension as those of the thin film pattern so as to correspond to a preliminarily determined forming region of the thin film pattern on the substrate.

Abstract: A deposition mask for forming a thin film pattern having a predetermined shape on a substrate by deposition, includes a resin film that transmits visible light and has an opening pattern penetrating through the resin film and having the same shape and dimension as those of the thin film pattern so as to correspond to a preliminarily determined forming region of the thin film pattern on the substrate.

Abstract: A deposition mask for forming a thin film pattern having a predetermined shape on a substrate by deposition, includes a resin film that transmits visible light and has an opening pattern penetrating through the resin film and having the same shape and dimension as those of the thin film pattern so as to correspond to a preliminarily determined forming region of the thin film pattern on the substrate.

Abstract: A deposition mask for forming a thin film pattern having a predetermined shape on a substrate by deposition, includes a resin film that transmits visible light and has an opening pattern penetrating through the resin film and having the same shape and dimension as those of the thin film pattern so as to correspond to a preliminarily determined forming region of the thin film pattern on the substrate.

Abstract: A deposition mask for forming a thin film pattern having a predetermined shape on a substrate by deposition, includes a resin film that transmits visible light and has an opening pattern penetrating through the resin film and having the same shape and dimension as those of the thin film pattern so as to correspond to a preliminarily determined forming region of the thin film pattern on the substrate.

Abstract: A deposition mask for forming a thin film pattern having a predetermined shape on a substrate by deposition, includes a resin film that transmits visible light and has an opening pattern penetrating through the resin film and having the same shape and dimension as those of the thin film pattern so as to correspond to a preliminarily determined forming region of the thin film pattern on the substrate.

Abstract: A deposition mask for forming a thin film pattern having a predetermined shape on a substrate by deposition, includes a resin film that transmits visible light and has an opening pattern penetrating through the resin film and having the same shape and dimension as those of the thin film pattern so as to correspond to a preliminarily determined forming region of the thin film pattern on the substrate.