Patents by Inventor Yoshitaka Moriyasu
Yoshitaka Moriyasu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11927646Abstract: Provided is a magnetic field measuring apparatus, comprising: a magnetic sensor array including a plurality of magnetic sensor cells, which is capable of detecting an input magnetic field in three axial directions at a plurality of locations in three-dimensional space; a measurement data acquiring section for acquiring measurement data based on the input magnetic field including a to-be-measured magnetic field; and a measurement data computing section for calibrating the measurement data acquired by the measurement data acquiring section; wherein the measurement data computing section comprises: an indicator calculation section for calculating an indicator illustrating calibration accuracy of the measurement data computing section; and a failure determination section for determining a failure based on the indicator calculated by the indicator calculation section; wherein each of the plurality of magnetic sensor cells comprises: a magnetic sensor; and an output section for outputting a output signal.Type: GrantFiled: May 25, 2021Date of Patent: March 12, 2024Assignee: Asahi Kasei Microdevices CorporationInventors: Shigeki Okatake, Yoshitaka Moriyasu, Masanori Masuda, Takenobu Nakamura
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Publication number: 20230324476Abstract: A magnetic field measurement apparatus including a magnetic sensor array having magnetic sensor cells capable of detecting magnetic fields in three axial directions arranged in three dimensions, each magnetic sensor cell including a plurality of magnetic sensors that each have a magnetoresistive element and a magnetic flux concentrator arranged at least at one of one end and another end of the magnetoresistive element; AD converters that respectively convert analog detection signals output by the magnetic sensors into digital measurement data; a magnetic field acquiring section that acquires the digital measurement data; a calibration computing section that calibrates the digital measurement data from the magnetic field acquiring section, using at least one of a main-axis sensitivity, cross-axis sensitivities, and an offset; and a gradient magnetic field computing section that calculates a gradient magnetic field using magnetic field measurement data resulting from the calibration of the digital measurement dType: ApplicationFiled: June 1, 2023Publication date: October 12, 2023Inventors: Takenobu NAKAMURA, Shigeki OKATAKE, Yoshitaka MORIYASU
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Patent number: 11668771Abstract: A magnetic field measurement apparatus including a magnetic sensor array having magnetic sensor cells capable of detecting magnetic fields in three axial directions arranged in three dimensions, each magnetic sensor cell including a plurality of magnetic sensors that each have a magnetoresistive element and a magnetic flux concentrator arranged at least at one of one end and another end of the magnetoresistive element; AD converters that respectively convert analog detection signals output by the magnetic sensors into digital measurement data; a magnetic field acquiring section that acquires the digital measurement data; a calibration computing section that calibrates the digital measurement data from the magnetic field acquiring section, using at least one of a main-axis sensitivity, cross-axis sensitivities, and an offset; and a gradient magnetic field computing section that calculates a gradient magnetic field using magnetic field measurement data resulting from the calibration of the digital measurement dType: GrantFiled: June 7, 2019Date of Patent: June 6, 2023Assignee: Asahi Kasei Microdevices CorporationInventors: Takenobu Nakamura, Shigeki Okatake, Yoshitaka Moriyasu
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Publication number: 20210286023Abstract: Provided is a magnetic field measuring apparatus, comprising: a magnetic sensor array including a plurality of magnetic sensor cells, which is capable of detecting an input magnetic field in three axial directions at a plurality of locations in three-dimensional space; a measurement data acquiring section for acquiring measurement data based on the input magnetic field including a to-be-measured magnetic field; and a measurement data computing section for calibrating the measurement data acquired by the measurement data acquiring section; wherein the measurement data computing section comprises: an indicator calculation section for calculating an indicator illustrating calibration accuracy of the measurement data computing section; and a failure determination section for determining a failure based on the indicator calculated by the indicator calculation section; wherein each of the plurality of magnetic sensor cells comprises: a magnetic sensor; and an output section for outputting a output signal.Type: ApplicationFiled: May 25, 2021Publication date: September 16, 2021Inventors: Shigeki OKATAKE, Yoshitaka MORIYASU, Masanori MASUDA, Takenobu NAKAMURA
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Publication number: 20210161420Abstract: A magnetic field measuring apparatus is provided including: a magnetic sensor array configured so that a plurality of magnetic sensor cells including a plurality of magnetic sensors each having a magnetoresistive element and magnetic flux concentrators arranged on both ends of the magnetoresistive element are three-dimensionally arranged and capable of detecting a magnetic field in three axial directions; a magnetic field acquiring section configured to acquire measurement data measured by the magnetic sensor array; and a signal space separating section configured to perform signal separation on a spatial distribution of a magnetic field indicated by the measurement data, based on basis vectors calculated from orthonormal functions and a position and magnetic sensitivity of each magnetic sensor of the magnetic sensor array.Type: ApplicationFiled: February 16, 2021Publication date: June 3, 2021Inventors: Takenobu NAKAMURA, Shigeki OKATAKE, Yoshitaka MORIYASU, Makoto KATAOKA
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Patent number: 11002806Abstract: Provided is a magnetic field detection device capable of detecting with a higher accuracy. A magnetic field detection device 1 includes a first magnetic sensor unit 1000a, a second magnetic sensor unit 1000b, a third magnetic sensor unit 1000c and a fourth magnetic sensor unit 1000d. The first and the second magnetic sensor units are disposed side by side so that a sensitive axis directions of the first and the second magnetic sensor units are oriented in a first direction, and the third and the fourth magnetic sensor units are disposed side by side so that the sensitive axis directions of the third and the fourth magnetic sensor units are oriented in a second direction.Type: GrantFiled: March 28, 2019Date of Patent: May 11, 2021Assignee: Asahi Kasei Microdevices CorporationInventors: Masanori Masuda, Yoshitaka Moriyasu
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Publication number: 20190377035Abstract: A magnetic field measurement apparatus including a magnetic sensor array having magnetic sensor cells capable of detecting magnetic fields in three axial directions arranged in three dimensions, each magnetic sensor cell including a plurality of magnetic sensors that each have a magnetoresistive element and a magnetic flux concentrator arranged at least at one of one end and another end of the magnetoresistive element; AD converters that respectively convert analog detection signals output by the magnetic sensors into digital measurement data; a magnetic field acquiring section that acquires the digital measurement data; a calibration computing section that calibrates the digital measurement data from the magnetic field acquiring section, using at least one of a main-axis sensitivity, cross-axis sensitivities, and an offset; and a gradient magnetic field computing section that calculates a gradient magnetic field using magnetic field measurement data resulting from the calibration of the digital measurement dType: ApplicationFiled: June 7, 2019Publication date: December 12, 2019Inventors: Takenobu NAKAMURA, Shigeki OKATAKE, Yoshitaka MORIYASU
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Publication number: 20190298202Abstract: A highly precise, and simple and easy calibration function of a magnetocardiographic measurement apparatus is provided. A magnetocardiographic measurement apparatus includes: a magnetic sensor array; and a magnetic field acquiring unit acquiring environmental magnetic field measurement data measured by the array in response to the array being turned such that the array faces a plurality of directions in an environmental magnetic field; a calibration parameter calculating unit using the environmental magnetic field measurement data to calculate a calibration parameter for calibrating measurement data measured by the array in magnetocardiographic measurement of a subject; a calibration parameter storage unit storing the calibration parameter; a calibration calculating unit using the calibration parameter to calibrate the measurement data; and a data output unit outputting the measurement data.Type: ApplicationFiled: March 27, 2019Publication date: October 3, 2019Inventors: Takenobu NAKAMURA, Shigeki OKATAKE, Yoshitaka MORIYASU
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Publication number: 20190302198Abstract: Provided is a magnetic field detection device capable of detecting with a higher accuracy. A magnetic field detection device 1 includes a first magnetic sensor unit 1000a, a second magnetic sensor unit 1000b, a third magnetic sensor unit 1000c and a fourth magnetic sensor unit 1000d. The first and the second magnetic sensor units are disposed side by side so that a sensitive axis directions of the first and the second magnetic sensor units are oriented in a first direction, and the third and the fourth magnetic sensor units are disposed side by side so that the sensitive axis directions of the third and the fourth magnetic sensor units are oriented in a second direction.Type: ApplicationFiled: March 28, 2019Publication date: October 3, 2019Applicant: Asahi Kasei Microdevices CorporationInventors: Masanori MASUDA, Yoshitaka MORIYASU
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Publication number: 20160035839Abstract: There is provided a compound semiconductor stack including a substrate (101) of which electrical resistance is greater than or equal to 1×105 ?cm, a first compound semiconductor layer (102) which is formed on the substrate (101), and contains In and Sb doped with carbon, and a second compound semiconductor layer (103) which is formed on the first compound semiconductor layer (102), has a carbon concentration less than a carbon concentration of the first compound semiconductor layer (102), and contains In and Sb. A film thickness of the first compound semiconductor layer (102) is greater than or equal to 0.005 ?m and less than or equal to 0.2 ?m. In addition, the carbon concentration of the first compound semiconductor layer (102) is greater than or equal to 1×1015 cm?3 and less than or equal to 5×1018 cm?3.Type: ApplicationFiled: March 25, 2014Publication date: February 4, 2016Applicants: ASAHI KASEI MICRODEVICES CORPORATION, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Akira YOSHIKAWA, Yoshitaka MORIYASU, Mutsuo OGURA
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Publication number: 20100264459Abstract: An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (2), and then, the compound semiconductor sensor (2) and an integrated circuit (3), which processes an electrical signal output by the compound semiconductor sensor (2) and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.Type: ApplicationFiled: June 22, 2010Publication date: October 21, 2010Inventors: Koichiro Ueno, Naohiro Kuze, Yoshitaka Moriyasu, Kazuhiro Nagase
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Patent number: 7768048Abstract: An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (2), and then, the compound semiconductor sensor (2) and an integrated circuit (3), which processes an electrical signal output by the compound semiconductor sensor (2) and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.Type: GrantFiled: September 9, 2004Date of Patent: August 3, 2010Assignee: Asahi Kasei EMD CorporationInventors: Koichiro Ueno, Naohiro Kuze, Yoshitaka Moriyasu, Kazuhiro Nagase
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Publication number: 20070090337Abstract: An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (2), and then, the compound semiconductor sensor (2) and an integrated circuit (3), which processes an electrical signal output by the compound semiconductor sensor (2) and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.Type: ApplicationFiled: September 9, 2004Publication date: April 26, 2007Inventors: Koichiro Ueno, Naohiro Kuze, Yoshitaka Moriyasu, Kazuhiro Nagase
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Patent number: 6528387Abstract: When producing an SOS substrate by growing a silicon layer on a sapphire substrate, or when producing an SOI substrate by depositing an oxide layer or a fluoride layer, as an intermediate layer, on a silicon substrate, and growing a silicon layer on the deposited layer, (A) after growth of the silicon layer, heat treatment is performed in an oxidizing atmosphere to oxidize a part of a surface side of the silicon layer, and the resulting silicon oxide layer is removed by etching with hydrofluoric acid. (B) With this silicon layer as a seed layer, a silicon layer is regrown homoepitaxially thereon.Type: GrantFiled: December 20, 1999Date of Patent: March 4, 2003Assignee: Asahi Kasei Kabushiki KaishaInventors: Yoshitaka Moriyasu, Takashi Morishita, Masahiro Matsui, Makoto Ishida