Patents by Inventor Yoshitaka Moriyasu

Yoshitaka Moriyasu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11927646
    Abstract: Provided is a magnetic field measuring apparatus, comprising: a magnetic sensor array including a plurality of magnetic sensor cells, which is capable of detecting an input magnetic field in three axial directions at a plurality of locations in three-dimensional space; a measurement data acquiring section for acquiring measurement data based on the input magnetic field including a to-be-measured magnetic field; and a measurement data computing section for calibrating the measurement data acquired by the measurement data acquiring section; wherein the measurement data computing section comprises: an indicator calculation section for calculating an indicator illustrating calibration accuracy of the measurement data computing section; and a failure determination section for determining a failure based on the indicator calculated by the indicator calculation section; wherein each of the plurality of magnetic sensor cells comprises: a magnetic sensor; and an output section for outputting a output signal.
    Type: Grant
    Filed: May 25, 2021
    Date of Patent: March 12, 2024
    Assignee: Asahi Kasei Microdevices Corporation
    Inventors: Shigeki Okatake, Yoshitaka Moriyasu, Masanori Masuda, Takenobu Nakamura
  • Publication number: 20230324476
    Abstract: A magnetic field measurement apparatus including a magnetic sensor array having magnetic sensor cells capable of detecting magnetic fields in three axial directions arranged in three dimensions, each magnetic sensor cell including a plurality of magnetic sensors that each have a magnetoresistive element and a magnetic flux concentrator arranged at least at one of one end and another end of the magnetoresistive element; AD converters that respectively convert analog detection signals output by the magnetic sensors into digital measurement data; a magnetic field acquiring section that acquires the digital measurement data; a calibration computing section that calibrates the digital measurement data from the magnetic field acquiring section, using at least one of a main-axis sensitivity, cross-axis sensitivities, and an offset; and a gradient magnetic field computing section that calculates a gradient magnetic field using magnetic field measurement data resulting from the calibration of the digital measurement d
    Type: Application
    Filed: June 1, 2023
    Publication date: October 12, 2023
    Inventors: Takenobu NAKAMURA, Shigeki OKATAKE, Yoshitaka MORIYASU
  • Patent number: 11668771
    Abstract: A magnetic field measurement apparatus including a magnetic sensor array having magnetic sensor cells capable of detecting magnetic fields in three axial directions arranged in three dimensions, each magnetic sensor cell including a plurality of magnetic sensors that each have a magnetoresistive element and a magnetic flux concentrator arranged at least at one of one end and another end of the magnetoresistive element; AD converters that respectively convert analog detection signals output by the magnetic sensors into digital measurement data; a magnetic field acquiring section that acquires the digital measurement data; a calibration computing section that calibrates the digital measurement data from the magnetic field acquiring section, using at least one of a main-axis sensitivity, cross-axis sensitivities, and an offset; and a gradient magnetic field computing section that calculates a gradient magnetic field using magnetic field measurement data resulting from the calibration of the digital measurement d
    Type: Grant
    Filed: June 7, 2019
    Date of Patent: June 6, 2023
    Assignee: Asahi Kasei Microdevices Corporation
    Inventors: Takenobu Nakamura, Shigeki Okatake, Yoshitaka Moriyasu
  • Publication number: 20210286023
    Abstract: Provided is a magnetic field measuring apparatus, comprising: a magnetic sensor array including a plurality of magnetic sensor cells, which is capable of detecting an input magnetic field in three axial directions at a plurality of locations in three-dimensional space; a measurement data acquiring section for acquiring measurement data based on the input magnetic field including a to-be-measured magnetic field; and a measurement data computing section for calibrating the measurement data acquired by the measurement data acquiring section; wherein the measurement data computing section comprises: an indicator calculation section for calculating an indicator illustrating calibration accuracy of the measurement data computing section; and a failure determination section for determining a failure based on the indicator calculated by the indicator calculation section; wherein each of the plurality of magnetic sensor cells comprises: a magnetic sensor; and an output section for outputting a output signal.
    Type: Application
    Filed: May 25, 2021
    Publication date: September 16, 2021
    Inventors: Shigeki OKATAKE, Yoshitaka MORIYASU, Masanori MASUDA, Takenobu NAKAMURA
  • Publication number: 20210161420
    Abstract: A magnetic field measuring apparatus is provided including: a magnetic sensor array configured so that a plurality of magnetic sensor cells including a plurality of magnetic sensors each having a magnetoresistive element and magnetic flux concentrators arranged on both ends of the magnetoresistive element are three-dimensionally arranged and capable of detecting a magnetic field in three axial directions; a magnetic field acquiring section configured to acquire measurement data measured by the magnetic sensor array; and a signal space separating section configured to perform signal separation on a spatial distribution of a magnetic field indicated by the measurement data, based on basis vectors calculated from orthonormal functions and a position and magnetic sensitivity of each magnetic sensor of the magnetic sensor array.
    Type: Application
    Filed: February 16, 2021
    Publication date: June 3, 2021
    Inventors: Takenobu NAKAMURA, Shigeki OKATAKE, Yoshitaka MORIYASU, Makoto KATAOKA
  • Patent number: 11002806
    Abstract: Provided is a magnetic field detection device capable of detecting with a higher accuracy. A magnetic field detection device 1 includes a first magnetic sensor unit 1000a, a second magnetic sensor unit 1000b, a third magnetic sensor unit 1000c and a fourth magnetic sensor unit 1000d. The first and the second magnetic sensor units are disposed side by side so that a sensitive axis directions of the first and the second magnetic sensor units are oriented in a first direction, and the third and the fourth magnetic sensor units are disposed side by side so that the sensitive axis directions of the third and the fourth magnetic sensor units are oriented in a second direction.
    Type: Grant
    Filed: March 28, 2019
    Date of Patent: May 11, 2021
    Assignee: Asahi Kasei Microdevices Corporation
    Inventors: Masanori Masuda, Yoshitaka Moriyasu
  • Publication number: 20190377035
    Abstract: A magnetic field measurement apparatus including a magnetic sensor array having magnetic sensor cells capable of detecting magnetic fields in three axial directions arranged in three dimensions, each magnetic sensor cell including a plurality of magnetic sensors that each have a magnetoresistive element and a magnetic flux concentrator arranged at least at one of one end and another end of the magnetoresistive element; AD converters that respectively convert analog detection signals output by the magnetic sensors into digital measurement data; a magnetic field acquiring section that acquires the digital measurement data; a calibration computing section that calibrates the digital measurement data from the magnetic field acquiring section, using at least one of a main-axis sensitivity, cross-axis sensitivities, and an offset; and a gradient magnetic field computing section that calculates a gradient magnetic field using magnetic field measurement data resulting from the calibration of the digital measurement d
    Type: Application
    Filed: June 7, 2019
    Publication date: December 12, 2019
    Inventors: Takenobu NAKAMURA, Shigeki OKATAKE, Yoshitaka MORIYASU
  • Publication number: 20190298202
    Abstract: A highly precise, and simple and easy calibration function of a magnetocardiographic measurement apparatus is provided. A magnetocardiographic measurement apparatus includes: a magnetic sensor array; and a magnetic field acquiring unit acquiring environmental magnetic field measurement data measured by the array in response to the array being turned such that the array faces a plurality of directions in an environmental magnetic field; a calibration parameter calculating unit using the environmental magnetic field measurement data to calculate a calibration parameter for calibrating measurement data measured by the array in magnetocardiographic measurement of a subject; a calibration parameter storage unit storing the calibration parameter; a calibration calculating unit using the calibration parameter to calibrate the measurement data; and a data output unit outputting the measurement data.
    Type: Application
    Filed: March 27, 2019
    Publication date: October 3, 2019
    Inventors: Takenobu NAKAMURA, Shigeki OKATAKE, Yoshitaka MORIYASU
  • Publication number: 20190302198
    Abstract: Provided is a magnetic field detection device capable of detecting with a higher accuracy. A magnetic field detection device 1 includes a first magnetic sensor unit 1000a, a second magnetic sensor unit 1000b, a third magnetic sensor unit 1000c and a fourth magnetic sensor unit 1000d. The first and the second magnetic sensor units are disposed side by side so that a sensitive axis directions of the first and the second magnetic sensor units are oriented in a first direction, and the third and the fourth magnetic sensor units are disposed side by side so that the sensitive axis directions of the third and the fourth magnetic sensor units are oriented in a second direction.
    Type: Application
    Filed: March 28, 2019
    Publication date: October 3, 2019
    Applicant: Asahi Kasei Microdevices Corporation
    Inventors: Masanori MASUDA, Yoshitaka MORIYASU
  • Publication number: 20160035839
    Abstract: There is provided a compound semiconductor stack including a substrate (101) of which electrical resistance is greater than or equal to 1×105 ?cm, a first compound semiconductor layer (102) which is formed on the substrate (101), and contains In and Sb doped with carbon, and a second compound semiconductor layer (103) which is formed on the first compound semiconductor layer (102), has a carbon concentration less than a carbon concentration of the first compound semiconductor layer (102), and contains In and Sb. A film thickness of the first compound semiconductor layer (102) is greater than or equal to 0.005 ?m and less than or equal to 0.2 ?m. In addition, the carbon concentration of the first compound semiconductor layer (102) is greater than or equal to 1×1015 cm?3 and less than or equal to 5×1018 cm?3.
    Type: Application
    Filed: March 25, 2014
    Publication date: February 4, 2016
    Applicants: ASAHI KASEI MICRODEVICES CORPORATION, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Akira YOSHIKAWA, Yoshitaka MORIYASU, Mutsuo OGURA
  • Publication number: 20100264459
    Abstract: An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (2), and then, the compound semiconductor sensor (2) and an integrated circuit (3), which processes an electrical signal output by the compound semiconductor sensor (2) and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.
    Type: Application
    Filed: June 22, 2010
    Publication date: October 21, 2010
    Inventors: Koichiro Ueno, Naohiro Kuze, Yoshitaka Moriyasu, Kazuhiro Nagase
  • Patent number: 7768048
    Abstract: An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (2), and then, the compound semiconductor sensor (2) and an integrated circuit (3), which processes an electrical signal output by the compound semiconductor sensor (2) and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.
    Type: Grant
    Filed: September 9, 2004
    Date of Patent: August 3, 2010
    Assignee: Asahi Kasei EMD Corporation
    Inventors: Koichiro Ueno, Naohiro Kuze, Yoshitaka Moriyasu, Kazuhiro Nagase
  • Publication number: 20070090337
    Abstract: An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (2), and then, the compound semiconductor sensor (2) and an integrated circuit (3), which processes an electrical signal output by the compound semiconductor sensor (2) and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.
    Type: Application
    Filed: September 9, 2004
    Publication date: April 26, 2007
    Inventors: Koichiro Ueno, Naohiro Kuze, Yoshitaka Moriyasu, Kazuhiro Nagase
  • Patent number: 6528387
    Abstract: When producing an SOS substrate by growing a silicon layer on a sapphire substrate, or when producing an SOI substrate by depositing an oxide layer or a fluoride layer, as an intermediate layer, on a silicon substrate, and growing a silicon layer on the deposited layer, (A) after growth of the silicon layer, heat treatment is performed in an oxidizing atmosphere to oxidize a part of a surface side of the silicon layer, and the resulting silicon oxide layer is removed by etching with hydrofluoric acid. (B) With this silicon layer as a seed layer, a silicon layer is regrown homoepitaxially thereon.
    Type: Grant
    Filed: December 20, 1999
    Date of Patent: March 4, 2003
    Assignee: Asahi Kasei Kabushiki Kaisha
    Inventors: Yoshitaka Moriyasu, Takashi Morishita, Masahiro Matsui, Makoto Ishida