Abstract: A wiring member includes a wiring body and a pattern. The wiring body includes a plurality of wire-like transmission members and a base material. The plurality of wire-like transmission members are fixed to the base material in an aligned state, and the pattern is provided on the wiring body. The pattern makes a two-dimensional position of at least a part of a portion related to the base material recognizable in the wiring body.

Abstract: [Problem] To address the problem of conventional old wood texture or antique taste boards which lack natural looking worn effects and present an appearance of an artificial treatment applied thereto. [Solution] Unlike a conventional configuration in which the rotary shaft of a roll brush is simply and fixedly arranged parallel to the wood grains of a board to which surface treatment is applied or the painted surface where paint is applied to the wood grains, the rotary shaft may be obliquely set to any angle including a right angle, and may be rotationally driven at high speed at a given inclined angle relative to the horizontal surface of the board along a left to right direction of the roll brush.

Abstract: [Problem] To address the problem of conventional old wood texture or antique taste boards which lack natural looking worn effects and present an appearance of an artificial treatment applied thereto. [Solution] Unlike a conventional configuration in which the rotary shaft of a roll brush is simply and fixedly arranged parallel to the wood grains of a board to which surface treatment is applied or the painted surface where paint is applied to the wood grains, the rotary shaft may be obliquely set to any angle including a right angle, and may be rotationally driven at high speed at a given inclined angle relative to the horizontal surface of the board along a left to right direction of the roll brush.

Abstract: An insertion apparatus includes an insertion section, a channel tube, a tube bending part, and a protective member disposed at the tube bending part, the protective member being configured to prevent deformation of the tube bending part when a guide wire passes through the tube bending part.

Abstract: An image pickup apparatus which is able to obtain an image with high sharpness within a short period of time using a simple structure when operated in a low-temperature environment. A lens unit and a heater are provided in an internal space of a main case, and the internal space is divided into a first closed space and a second closed space via an opening, which is opened and closed by a valve member. A detecting unit detects a temperature in the internal space. An opening and closing unit opens and closes the valve member. A control unit controls opening and closing actions of the valve member.

Abstract: An image pickup apparatus which is able to obtain an image with high sharpness within a short period of time using a simple structure when operated in a low-temperature environment. A lens unit and a heater are provided in an internal space of a main case, and the internal space is divided into a first closed space and a second closed space via an opening, which is opened and closed by a valve member. A detecting unit detects a temperature in the internal space. An opening and closing unit opens and closes the valve member. A control unit controls opening and closing actions of the valve member.

Abstract: A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN layer. A band gap of the AlGaN layer is wider than a band gap of the p-GaN layer and the SI-GaN layer. Moreover, impurity concentration of the SI-GaN layer is less than 1×1017 cm?3. Semiconductor devices including III-V semiconductors may have a stable normally-off operation.

Abstract: A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN layer. A band gap of the AlGaN layer is wider than a band gap of the p-GaN layer and the SI-GaN layer. Moreover, impurity concentration of the SI-GaN layer is less than 1×1017 cm?3. Semiconductor devices including III-V semiconductors may have a stable normally-off operation.

Abstract: A fundus imaging apparatus selects a focal position detection method in accordance with whether a diopter correction lens is inserted in an optical path of an imaging optical system that includes an imaging unit; and detects a focal position based on a signal from the imaging unit according to the selected focal position detection method.

Abstract: A communication apparatus comprises a reception unit that receives a reception signal from a metal cable and extracts reception data; a transmission unit that sends a transmission signal obtained by modulating transmission data with a frequency included in a first frequency band to the metal cable; an interference signal detection unit that detects a signal used in communication using a cable modem, modulated by a frequency included in a second frequency band, and transmitted over the metal cable as an interference signal; and a signal transmission control unit that instructs the transmission unit to modulate transmission data using a frequency included in a third frequency band that does not have any frequency band overlapping the second frequency band when the interference signal is detected and a frequency band overlapping both the first frequency band and the second frequency band exists.

Abstract: A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN layer. A band gap of the AlGaN layer is wider than a band gap of the p-GaN layer and the SI-GaN layer. Moreover, impurity concentration of the SI-GaN layer is less than 1×1017 cm?3. Semiconductor devices including III-V semiconductors may have a stable normally-off operation.

Abstract: An apparatus comprises: a projection unit arranged in an illumination optical system for projecting illumination light onto a fundus of an eye and to project a focus index onto the eye; a focus lens arranged in a light-receiving optical system for guiding reflected light from the fundus to an image sensor and to focus the image sensor on the fundus; a first unit to detect an approximate focus position using the focus index in a first mode; a second unit to detect a focus position in a second mode by evaluating a luminance-contrast of a fundus image formed on the image sensor based on the approximate focus position; and a control unit to control positions of the focus lens and the projection unit in association with each other in the first mode, and control them independently in the second mode.

Abstract: An ophthalmic apparatus includes an illumination optical system which projects an illumination light beam from an illumination light source onto the fundus of the eye to be examined and an imaging optical system which guides reflected light from the fundus to imaging part. The ophthalmic apparatus calculates the contrast value of the fundus image formed by the imaging part, and focuses the imaging optical system on the fundus by moving a focus lens in the optical-axis direction of the imaging optical system based on the contrast value obtained by the calculation. The apparatus adjusts the contrast value obtained by the above calculation based on the position of the focus lens in the optical-axis direction.

Abstract: A fundus imaging apparatus selects a focal position detection method in accordance with whether a diopter correction lens is inserted in an optical path of an imaging optical system that includes an imaging unit; and detects a focal position based on a signal from the imaging unit according to the selected focal position detection method.

Abstract: A communication apparatus comprises a reception unit that receives a reception signal from a metal cable and extracts reception data; a transmission unit that sends a transmission signal obtained by modulating transmission data with a frequency included in a first frequency band to the metal cable; an interference signal detection unit that detects a signal used in communication using a cable modem, modulated by a frequency included in a second frequency band, and transmitted over the metal cable as an interference signal; and a signal transmission control unit that instructs the transmission unit to modulate transmission data using a frequency included in a third frequency band that does not have any frequency band overlapping the second frequency band when the interference signal is detected and a frequency band overlapping both the first frequency band and the second frequency band exists.

Abstract: An ophthalmic apparatus includes an optical system configured to illuminate a subject's eye with light generated by a light source, a first reflection portion including a reflection surface for reflecting the light generated by the light source and a transmission portion, and a light amount detection unit configured to detect an amount of light generated by the light source via the transmission portion. The first reflection portion is disposed in a direction opposite to a direction of the light generated by the light source toward the subject's eye.

Abstract: A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN layer. A band gap of the AlGaN layer is wider than a band gap of the p-GaN layer and the SI-GaN layer. Moreover, impurity concentration of the SI-GaN layer is less than 1×1017 cm?3. Semiconductor devices including III-V semiconductors may have a stable normally-off operation.

Abstract: A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN layer. A band gap of the AlGaN layer is wider than a band gap of the p-GaN layer and the SI-GaN layer. Moreover, impurity concentration of the SI-GaN layer is less than 1×1017 cm?3. Semiconductor devices including III-V semiconductors may have a stable normally-off operation.

Abstract: The semiconductor device has a stacked structure in which a p-GaN layer 32, an SI-GaN layer 62, and an AlGaN layer 34 are stacked, and has a gate electrode 44 that is formed at a top surface side of the AlGaN layer 34. A band gap of the AlGaN layer 34 is wider than a band gap of the p-GaN layer 32 and the SI-GaN layer 62. Moreover, impurity concentration of the SI-GaN layer 62 is less than 1×1017 cm?3. The semiconductor devices comprising III-V semiconductors that have a stable normally-off operation are realized.

Abstract: A semiconductor device is formed by a first layer 32 composed of AlGaN, a second layer 42 composed of GaN, a gate electrode 34, a source electrode 38, and a drain electrode 28. The first layer 32 has a region 32a formed between the gate electrode 34 and the second layer 42. A channel is formed in the vicinity of the boundary 24 of the first layer 32 and the second layer 42. The second layer 42 has p-type conductivity and is in contact with the source electrode 38. When electrons flow in the channel, the electrons collide with surrounding atoms, and holes are formed. If holes are accumulated inside the semiconductor device, the presence of the accumulated holes causes dielectric breakdown. In the semiconductor device of the invention, holes are discharged to the outside of the device thorough the second layer 42 and the source electrode 38, and accumulation of holes can be prevented.