Patents by Inventor Yoshitaka Noda

Yoshitaka Noda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200377833
    Abstract: A cell picking device includes a sucker having a pipette tip attached to a tip portion of the sucker and is used to suck the cell from a tip of the pipette tip, a driver configured to cause the sucker to perform a suction operation and move the sucker in a horizontal-plane direction and an axial direction of the pipette tip with the sucker inclined with respect to a vertical direction. A controller moves the sucker such that the tip of the pipette tip moves in a horizontal direction while being in contact with a bottom surface of the container installed on the sample mounting stage in a predetermined position on the sample mounting stage to desorb a cell arranged in the predetermined position from the bottom surface of the container, and suck the cell desorbed from the bottom surface of the container from the tip of the pipette tip.
    Type: Application
    Filed: March 16, 2018
    Publication date: December 3, 2020
    Inventors: Takashi INOUE, Kenji TAKAKURA, Yoshitaka NODA, Yasuaki MATSUNAGA, Mika OKADA, Akari TAKEDA
  • Patent number: 10479675
    Abstract: A semiconductor device production method includes performing trench etching to form a trench in a thickness direction of a semiconductor layer so that both of a first pattern portion and a second pattern portion whose side walls face each other across the trench are formed. In the trench etching, the semiconductor layer is etched and removed while a protective film is formed on a surface of the semiconductor layer, and the trench etching is performed so that the first pattern portion and the second pattern portion are configured to have a same potential or a same temperature during the trench etching.
    Type: Grant
    Filed: September 9, 2016
    Date of Patent: November 19, 2019
    Assignee: DENSO CORPORATION
    Inventors: Akira Ogawa, Yoshitaka Noda, Tetsuo Yoshioka, Yuhei Shimizu
  • Publication number: 20190023563
    Abstract: A semiconductor device production method includes performing trench etching to form a trench in a thickness direction of a semiconductor layer so that both of a first pattern portion and a second pattern portion whose side walls face each other across the trench are formed. In the trench etching, the semiconductor layer is etched and removed while a protective film is formed on a surface of the semiconductor layer, and the trench etching is performed so that the first pattern portion and the second pattern portion are configured to have a same potential or a same temperature during the trench etching.
    Type: Application
    Filed: September 9, 2016
    Publication date: January 24, 2019
    Inventors: Akira OGAWA, Yoshitaka NODA, Tetsuo YOSHIOKA, Yuhei SHIMIZU
  • Patent number: 9506540
    Abstract: There is provided a pedal apparatus in which connection bracket is prevented from falling off from a pedal arm even if there is a welding defect. A pedal apparatus includes a pedal arm provided with an inclined portion, an upper retaining hole, and a lower retaining hole passing therethrough. A connection bracket, having a connecting face, an upper attachment face, a lower attachment face, an upper retaining projection and a lower retaining projection, is coupled with the pedal arm, with the upper retaining projection and the lower retaining projection respectively passing through the upper retaining hole and the lower retaining hole. Each edge of the upper attachment face and the lower attachment face is welded to the inclined portion of the pedal arm.
    Type: Grant
    Filed: December 29, 2015
    Date of Patent: November 29, 2016
    Assignees: HONDA MOTOR CO., LTD., HIRUTA-KOGYO CO., LTD.
    Inventors: Motomasa Suzuki, Hiroshi Saito, Junji Ishii, Yoshitaka Noda, Kenji Fujioka, Takurou Matsuda
  • Patent number: 9299576
    Abstract: A trench is etched in a semiconductor wafer by turning a first introduced gas introduced into a reaction chamber into plasma. A protection film is formed on a wall surface of the trench by turning a second introduced gas introduced into the reaction chamber into plasma. The protection film formed on a bottom surface of the trench is removed by turning a third introduced gas introduced into the reaction chamber into plasma. The reaction chamber is evacuated after the protection film formed on the bottom surface of the trench is removed.
    Type: Grant
    Filed: April 19, 2013
    Date of Patent: March 29, 2016
    Assignee: DENSO CORPORATION
    Inventors: Youhei Oda, Yoshitaka Noda
  • Publication number: 20150118849
    Abstract: A trench is etched in a semiconductor wafer by turning a first introduced gas introduced into a reaction chamber into plasma. A protection film is formed on a wall surface of the trench by turning a second introduced gas introduced into the reaction chamber into plasma. The protection film formed on a bottom surface of the trench is removed by turning a third introduced gas introduced into the reaction chamber into plasma. The reaction chamber is evacuated after the protection film formed on the bottom surface of the trench is removed.
    Type: Application
    Filed: April 19, 2013
    Publication date: April 30, 2015
    Applicant: DENSO CORPORATION
    Inventors: Youhei Oda, Yoshitaka Noda
  • Patent number: 9011604
    Abstract: In a manufacturing method of a semiconductor device, a depression is formed in a semiconductor substrate made of silicon or silicon compound semiconductor, and foreign substances including a protection layer in the depression is removed with a cleaning solution. The cleaning solution includes a mixed solution of hydrogen peroxide water to which a chelator is added, a basic solution, and water.
    Type: Grant
    Filed: June 2, 2011
    Date of Patent: April 21, 2015
    Assignee: DENSO CORPORATION
    Inventors: Daigorou Yamaguchi, Yoshitaka Noda
  • Patent number: 8915120
    Abstract: A vial feed device is equipped with a feed arm, which is positioned between a vial tray and an oven and below either of them and having a feeding housing unit and a cooling housing unit, and a vial up-and-down moving mechanism for placing and removing vials in and from vial tray and oven. Feed arm is rotationally driven by a drive motor to move a feeding housing unit, a cooling housing unit and up-and-down moving mechanism toward vial tray or oven. High-temperature vials in oven are housed in cooling housing unit until cooling time T elapses. After cooling time T elapses, cooling housing unit is moved to a lower part of vial tray by feed arm, to be returned to vial tray by up-and-down moving mechanism.
    Type: Grant
    Filed: July 26, 2012
    Date of Patent: December 23, 2014
    Assignee: Shimadzu Corporation
    Inventors: Takashi Inoue, Takeshi Maji, Hirotaka Naganuma, Shinichi Mitsuhashi, Yoshitaka Noda
  • Patent number: 8770605
    Abstract: A chassis frame (1) including connection members (13) each configured by a pipe that is connected to a vehicle body frame. Each connection member (13) is provided with an attachment part (2) at an end of the pipe. The attachment part (2) includes a flat attachment face (21) formed by flatly crashing an end of the pipe to form the overlapped portion where a plate of the pipe is overlapped. The flat attachment face (21) is provided on a center in left and right direction of the overlapped portion. A shape of the end of the pipe is a substantially gate shape in its cross section. The attachment part (2) further includes longitudinal ribs (22) bending from the flat attachment face (21) to both left and right sides of the overlapped portion.
    Type: Grant
    Filed: April 27, 2012
    Date of Patent: July 8, 2014
    Assignees: Mitsubishi Jidosha Kogyo Kabushiki Kaisya, Hiruta-Kogyo Co., Ltd.
    Inventors: Manabu Urata, Kenichi Suzuki, Junji Ishii, Yoshitaka Noda, Mitsuyori Gurita
  • Publication number: 20140049032
    Abstract: A chassis frame (1) including connection members (13) each configured by a pipe that is connected to a vehicle body frame. Each connection member (13) is provided with an attachment part (2) at an end of the pipe. The attachment part (2) includes a flat attachment face (21) formed by flatly crashing an end of the pipe to form the overlapped portion where a plate of the pipe is overlapped. The flat attachment face (21) is provided on a center in left and right direction of the overlapped portion. A shape of the end of the pipe is a substantially gate shape in its cross section. The attachment part (2) further includes longitudinal ribs (22) bending from the flat attachment face (21) to both left and right sides of the overlapped portion.
    Type: Application
    Filed: April 27, 2012
    Publication date: February 20, 2014
    Applicants: Hiruta-Kogyo Co., Ltd., Mitsubishi Jidosha Kogyo Kabushiki Kaisya
    Inventors: Manabu Urata, Kenichi Suzuki, Junji Ishii, Yoshitaka Noda, Milsuyori Gurita
  • Publication number: 20140026757
    Abstract: A vial feed device is equipped with a feed arm, which is positioned between a vial tray and an oven and below either of them and having a feeding housing unit and a cooling housing unit, and a vial up-and-down moving mechanism for placing and removing vials in and from vial tray and oven. Feed arm is rotationally driven by a drive motor to move a feeding housing unit, a cooling housing unit and up-and-down moving mechanism toward vial tray or oven. High-temperature vials in oven are housed in cooling housing unit until cooling time T elapses. After cooling time T elapses, cooling housing unit is moved to a lower part of vial tray by feed arm, to be returned to vial tray by up-and-down moving mechanism.
    Type: Application
    Filed: July 26, 2012
    Publication date: January 30, 2014
    Applicant: SHIMADZU CORPORATION
    Inventors: Takashi INOUE, Takeshi MAJI, Hirotaka NAGANUMA, Shinichi MITSUHASHI, Yoshitaka NODA
  • Publication number: 20120000484
    Abstract: In a manufacturing method of a semiconductor device, a depression is formed in a semiconductor substrate made of silicon or silicon compound semiconductor, and foreign substances including a protection layer in the depression is removed with a cleaning solution. The cleaning solution includes a mixed solution of hydrogen peroxide water to which a chelator is added, a basic solution, and water.
    Type: Application
    Filed: June 2, 2011
    Publication date: January 5, 2012
    Applicant: DENSO CORPORATION
    Inventors: Daigorou Yamaguchi, Yoshitaka Noda
  • Publication number: 20100089198
    Abstract: A pedal device for a vehicle in which a support member for rotatably supporting a pedal arm is mounted on a dash panel positioned forward of a deck cross member. The pedal arm is pivotally attached to the support member by a pedal-rotating shaft inserted through a pedal shaft hole formed in the support member, and this support member has a pivotal impact lever which is provided above the pedal arm and forward of the deck cross member and brought down toward the pedal-rotating shaft.
    Type: Application
    Filed: December 26, 2007
    Publication date: April 15, 2010
    Applicant: HIRUTA-KOGYO CO., LTD.
    Inventors: Kenji Fujioka, Junji Ishii, Hideo Tsuboi, Yoshitaka Noda
  • Patent number: 7532404
    Abstract: An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.
    Type: Grant
    Filed: September 28, 2006
    Date of Patent: May 12, 2009
    Assignee: DENSO CORPORATION
    Inventors: Junji Oohara, Kazuhiko Kano, Yoshitaka Noda, Yukihiko Takeuchi, Toshiyuki Morishita
  • Publication number: 20080305644
    Abstract: In a manufacturing method of a semiconductor device, a trench is formed in a semiconductor substrate by an anisotropic dry etching so as to have an aspect ratio greater than or equal to 10, and a damaged layer that is generated in a wall and a bottom of the trench due to the anisotropic dry etching is removed by an isotropic dry etching. The isotropic dry etching is performed with a first gas including carbon and fluorine and a second gas including oxygen. A temperature of the semiconductor substrate is controlled so that the damaged layer is removed from a whole surface of the wall and the bottom in the isotropic dry etching.
    Type: Application
    Filed: May 22, 2008
    Publication date: December 11, 2008
    Applicant: DENSO CORPORATION
    Inventors: Yoshitaka Noda, Tsuyoshi Yamamoto
  • Publication number: 20070019406
    Abstract: An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.
    Type: Application
    Filed: September 28, 2006
    Publication date: January 25, 2007
    Applicant: DENSO CORPORATION
    Inventors: Junji Oohara, Kazuhiko Kano, Yoshitaka Noda, Yukihiro Takeuchi, Toshiyuki Morishita
  • Patent number: 7129176
    Abstract: An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.
    Type: Grant
    Filed: January 20, 2004
    Date of Patent: October 31, 2006
    Assignee: Denso Corporation
    Inventors: Junji Oohara, Kazuhiko Kano, Yoshitaka Noda, Yukihiro Takeuchi, Toshiyuki Morishita
  • Patent number: 7044503
    Abstract: A collapsible telescopic steering apparatus includes a steering column having an outer tube and an inner tube. The tubes can be switched between a press-fit state and a loose-fit state. The position of a steering wheel is adjusted by way of relative sliding movement of the loose-fitted tubes along an axial direction thereof. A shock absorbing projection is provided on at least one of an inner periphery of the outer tube and an outer periphery of the inner tube, as confronting to the counterpart tube. The shock absorbing projection is normally spaced away from the counterpart tube but is deformed as pressed against the counterpart tube in association with relative sliding movement of the press-fitted tubes upon collision, thereby absorbing the shock of the collision.
    Type: Grant
    Filed: June 3, 2003
    Date of Patent: May 16, 2006
    Assignees: Koyo Seiko Co., Ltd., Hiruta-Kogyo Co., Ltd.
    Inventors: Tetsuya Murakami, Shuzo Hirakushi, Yoshitaka Noda
  • Patent number: 6972458
    Abstract: A semiconductor device includes a base P region, a source N+ region, and a drain N+ region formed in a surface layer portion on a principal surface in an N? silicon layer. In the surface layer portion on the principal surface, an N well region is formed deeper than the drain N+ region in a region including the drain N+ region and is in contact with the base P region. A trench is formed so as to penetrate the base P region in a direction toward the drain N+ region from the source N+ region as a planar structure. A gate electrode is formed via a gate insulating film in the inside of the trench.
    Type: Grant
    Filed: December 9, 2003
    Date of Patent: December 6, 2005
    Assignee: Denso Corporation
    Inventors: Naohiro Suzuki, Jun Sakakibara, Yoshitaka Noda, Hitoshi Yamaguchi
  • Publication number: 20050230747
    Abstract: A semiconductor device includes a base P region, a source N+ region, and a drain N+ region formed in a surface layer portion on a principal surface in an N? silicon layer. In the surface layer portion on the principal surface, an N well region is formed deeper than the drain N+ region in a region including the drain N+ region and is in contact with the base P region. A trench is formed so as to penetrate the base P region in a direction toward the drain N+ region from the source N+ region as a planar structure. A gate electrode is formed via a gate insulating film in the inside of the trench.
    Type: Application
    Filed: June 21, 2005
    Publication date: October 20, 2005
    Inventors: Naohiro Suzuki, Jun Sakakibara, Yoshitaka Noda, Hitoshi Yamaguchi