Abstract: A display device includes a plurality of pixels arranged in a matrix on a substrate along a first direction and a second direction intersecting the first direction, each of the plurality of pixels including a transistor, a first wiring arranged over the transistor and electrically connected to the transistor, a first transparent conductive layer arranged over the first wiring and electrically connected to the transistor, a first insulating layer arranged on the first transparent conductive layer, and having a contact hole, and a second transparent conductive layer arranged on the first insulating layer and electrically connected to the first transparent conductive layer via the contact hole.

Abstract: A display device including a plurality of pixels arranged in a matrix on a substrate along a first direction and a second direction intersecting the first direction, wherein each of the plurality of pixels includes a transistor, a first transparent conductive layer arranged over the transistor and electrically connected to the transistor, a first insulating layer arranged over the first transparent conductive layer, a second transparent conductive layer arranged in the first insulating layer and electrically connected to the first transparent conductive layer via an opening extending over the plurality of pixels arranged in line in the first direction, a filling member arranged over the second transparent conductive layer to fill the interior of the opening, a third transparent conductive layer arranged on the first insulating layer and the filling member, and a metal layer in contact with the third transparent electrode.

Abstract: According to one embodiment, a display device includes a first conductive layer, a second conductive layer overlapping the first conductive layer, a first capacitive portion located in a same layer as the first conductive layer, a second capacitive portion located in a same layer as the second conductive layer and overlapping the first capacitive portion, a first inorganic insulating film located between the first conductive layer and the second conductive layer and between the first capacitive portion and the second capacitive portion, a drain electrode electrically connected to the second capacitive portion, a pixel electrode electrically connected to the drain electrode.

Abstract: A display device includes a first transistor provided with an oxide semiconductor layer, a first gate wiring facing the oxide semiconductor layer and a first gate insulating layer between the oxide semiconductor layer and the first gate wiring, a first transparent conductive layer provided on at least a first insulating layer on the first transistor, the first transparent conductive layer having an area overlapping the gate wiring and being in contact with the oxide semiconductor layer in a first contact area not overlapping the gate wiring, a second transparent conductive layer provided above at least a second insulating layer on the first transparent conductive layer and being in contact with the first transparent conductive layer at a second contact area overlapping the gate wiring, and a third transparent conductive layer provided between the second transparent conductive layer and the second insulating layer.

Abstract: A display device includes a first substrate, a plurality of pixels on the first substrate, a first light shielding layer on the first substrate, a second substrate, and a second light shielding layer on the second substrate. The first light shielding layer extends in the first direction, the second light shielding layer extends in a second direction intersecting the first direction, and apertures of the plurality of pixels are defined by the first light shielding layer and the second light shielding layer.

Abstract: A display device includes a first transistor provided with an oxide semiconductor layer, a first gate electrode facing the oxide semiconductor layer and a first gate insulatin layer between the oxide semiconductor layer and the first gate electrode, a first transparent conductive layer in contact with the oxide semiconductor layer in a first contact area not overlapping the first gate electrode in a plan view, and a second transparent conductive layer connected to the first transparent conductive layer in a second contact area overlapping the first gate electrode in a plan view and provided in a display area of the pixel.

Abstract: A detection apparatus includes: a substrate; photodiodes each including a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer; transistors provided for the respective photodiodes; an insulating film provided so as to cover the transistors; a first inorganic insulating film provided so as to cover the photodiodes; a first organic insulating film provided on the upper side of the first inorganic insulating film; and an upper conductive layer provided on the upper side of the first organic insulating film and electrically coupled to the photodiode. Each photodiode includes: first regions in each of which the p-type semiconductor layer, the i-type semiconductor layer, and the n-type semiconductor layer are directly in contact with one another; and a second region in which the p-type semiconductor layer and the i-type semiconductor layer are separate from each other. The adjacent first regions are coupled together by the p-type semiconductor layer.

Abstract: A semiconductor device including a first gate electrode, a first gate insulating film in contact with the first gate electrode, an oxide semiconductor layer in contact with the first gate insulating film, and a source electrode and a drain electrode electrically connected to the semiconductor layer, wherein the first gate electrode, the source electrode, and the drain electrode are either an electrode consisting of copper (Cu) containing manganese (Mn), an electrode having a layered structure of layers containing copper and titanium (Ti), or an electrode having a layered structure of layers containing titanium and aluminum (Al), and the first gate electrode includes a different metal from the source electrode and drain electrode.

Abstract: According to one embodiment, a display device includes a first substrate including a first signal line and a second signal line adjacent to each other along a first direction, an organic insulating film located on the first signal line and the second signal line, and a first spacer located on the organic insulating film and a second substrate opposing the first substrate and including a second spacer opposing the first spacer. The organic insulating film has a through-hole between the first signal line and the second signal line in plan view. The first spacer is provided to overlap the through-hole in plan view and filling the through-hole.

Abstract: A display device includes: an oxide semiconductor layer; a gate electrode facing the oxide semiconductor layer; a gate insulating layer between the oxide semiconductor layer and the gate electrode; a light-shielding layer overlapping part of the oxide semiconductor layer in a plan view; a first insulating layer covering the oxide semiconductor layer, the gate electrode, and the gate insulating layer, the first insulating layer including a first opening including a first side wall overlapping the light-shielding layer and a second side wall not overlapping the light-shielding layer in a plan view; and a transparent conductive layer arranged above the first insulating layer and connected to the oxide semiconductor layer via the first opening. The transparent conductive layer is arranged in an area overlapping the first side wall and is not arranged in at least part in an area overlapping the second side wall in a plan view.

Abstract: A display device includes a first transistor provided with an oxide semiconductor layer, a first gate wiring facing the oxide semiconductor layer and a first gate insulating layer between the oxide semiconductor layer and the first gate wiring, a first transparent conductive layer provided on at least a first insulating layer on the first transistor, the first transparent conductive layer having an area overlapping the gate wiring and being in contact with the oxide semiconductor layer in a first contact area not overlapping the gate wiring, a second transparent conductive layer provided above at least a second insulating layer on the first transparent conductive layer and being in contact with the first transparent conductive layer at a second contact area overlapping the gate wiring, and a third transparent conductive layer provided between the second transparent conductive layer and the second insulating layer.

Abstract: A display device includes a first substrate, a plurality of pixels on the first substrate, a first light shielding layer on the first substrate, a second substrate, and a second light shielding layer on the second substrate. The first light shielding layer extends in the first direction, the second light shielding layer extends in a second direction intersecting the first direction, and apertures of the plurality of pixels are defined by the first light shielding layer and the second light shielding layer.

Abstract: A display device includes a plurality of pixels arranged in a matrix on a substrate along a first direction and a second direction intersecting the first direction. Each of the plurality of pixels includes a transistor, a first transparent electrode located over the transistor and electrically connected to the transistor, a second transparent electrode located over the first transparent electrode and electrically connected to the first transparent electrode via an opening, an insulating layer located over the second transparent electrode, a third transparent electrode located over the insulating layer; and a metal layer in contact with the third transparent electrode. The opening overlaps a gate electrode of the transistor. At least a part of the metal layer is provided in the opening and overlaps the gate electrode. The metal layer extends along the first direction and is commonly provided in the pixels arranged in the first direction.

Abstract: A display device includes a display area, a frame area surrounding the display area, a plurality of pixel circuit in the display area, a peripheral circuit in the frame area, and wirings connecting the pixel circuit and the peripheral circuit, wherein the peripheral circuit incudes a plurality of switch circuits along a direction away from the display area, a plurality of relay electrodes between the display area and the plurality of switch circuits, and a plurality of connecting wirings connecting each of the plurality of relay electrodes and each of the plurality of switch circuits, and the plurality of relay electrodes is connected to the wirings, and one of the plurality of connecting wirings connecting one of the plurality of switch circuits and one of the plurality of relay electrodes intersects at least one of the other plurality of switch circuits in a plan view.

Abstract: A display device includes a first transistor provided with an oxide semiconductor layer, a first gate electrode facing the oxide semiconductor layer and a first gate insulation layer between the oxide semiconductor layer and the first gate electrode, a first transparent conductive layer in contact with the oxide semiconductor layer in a first contact area not overlapping the first gate electrode in a plan view, and a second transparent conductive layer connected to the first transparent conductive layer in a second contact area overlapping the first gate electrode in a plan view and provided in a display area of the pixel.

Abstract: A detection device is provided and includes substrate; drive electrode provided on substrate; detection electrode provided on substrate and capacitively coupling with drive electrode; first thin film transistor connected to drive electrode and second thin film transistor connected to first thin film transistor, first insulating film and second insulating film both stacked on substrate, wherein first thin film transistor comprises first gate electrode and first semiconductor layer, second thin film transistor comprises second gate electrode and second semiconductor layer, first semiconductor layer and second semiconductor layer are in same layer and are located between first insulating film and second insulating film, first gate electrode opposes first semiconductor layer via first insulating film, second gate electrode opposes second semiconductor layer via second insulating film, and distance from first gate electrode to first semiconductor layer is greater than distance from second gate electrode to second

Abstract: According to one embodiment, a display device includes a first substrate including a first signal line and a second signal line adjacent to each other along a first direction, an organic insulating film located on the first signal line and the second signal line, and a first spacer located on the organic insulating film and a second substrate opposing the first substrate and including a second spacer opposing the first spacer. The organic insulating film has a through-hole between the first signal line and the second signal line in plan view. The first spacer is provided to overlap the through-hole in plan view and filling the through-hole.

Abstract: A display device includes a first transistor. The first transistor includes an oxide semiconductor layer, a first gate electrode facing the oxide semiconductor layer and a gate insulating layer between the oxide semiconductor layer and the first gate electrode. The first gate electrode has hydrogen storage properties.

Abstract: A display device includes a plurality of pixels arranged in a matrix on a substrate along a first direction and a second direction intersecting the first direction. Each of the plurality of pixels includes a transistor, a first transparent electrode located over the transistor and electrically connected to the transistor, a second transparent electrode located over the first transparent electrode and electrically connected to the first transparent electrode via an opening, an insulating layer located over the second transparent electrode, a third transparent electrode located over the insulating layer; and a metal layer in contact with the third transparent electrode. The opening overlaps a gate electrode of the transistor. At least a part of the metal layer is provided in the opening and overlaps the gate electrode. The metal layer extends along the first direction and is commonly provided in the pixels arranged in the first direction.

Abstract: A display device includes a first transistor having an oxide semiconductor layer, a gate wiring opposite the oxide semiconductor layer, a gate insulating layer between the semiconductor layer and the gate wiring, a first insulating layer including at least one insulating layer having a first contact hole outside the gate wiring, a planarization film having a second contact hole overlapping the first contact hole, a first transparent conductive layer including an area overlapping the gate wiring, a second insulating layer covering a side of the second contact hole, a second transparent conductive layer in contact with the oxide semiconductor layer through the first and second contact hole, a first resin filling the first and second contact hole coated by the second transparent conductive layer, and a third transparent conductive layer on the second transparent conductive layer and the first resin.