Patents by Inventor Yoshitaka Saita

Yoshitaka Saita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Processing method and processing system
    Patent number: 8778205
    Abstract: The present invention is a processing method including a processing step of performing predetermined processing for a workpiece; an unnecessary portion removal step of removing an unnecessary portion produced on a surface of the workpiece due to the predetermined processing; and a surface structure evaluation step of evaluating a surface structure of the workpiece from which the unnecessary portion has been removed by the unnecessary portion removal step.
    Type: Grant
    Filed: October 14, 2009
    Date of Patent: July 15, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Tsuyoshi Ohno, Toshihiko Kikuchi, Machi Moriya, Yoshitaka Saita
  • Processing method and processing system
    Publication number: 20100133231
    Abstract: The present invention is a processing method including a processing step of performing predetermined processing for a workpiece; an unnecessary portion removal step of removing an unnecessary portion produced on a surface of the workpiece due to the predetermined processing; and a surface structure evaluation step of evaluating a surface structure of the workpiece from which the unnecessary portion has been removed by the unnecessary portion removal step.
    Type: Application
    Filed: October 14, 2009
    Publication date: June 3, 2010
    Inventors: Tsuyoshi Ohno, Toshihiko Kikuchi, Machi Moriya, Yoshitaka Saita
  • Method and apparatus for etching Si
    Publication number: 20060021704
    Abstract: A method for dry-etching a Si substrate or a Si layer in a processing chamber includes the step of supplying an etching gas into the processing chamber, wherein the etching gas is a mixture gas including Cl2, O2 and NF3 and a residence time ? of the etching gas is equal to or greater than about 180 msec, the residence time ? being defined as: ?=pV/Q where p represents an inner pressure of the processing chamber; V, an effective volume of etching space formed on the Si substrate or the Si layer; and Q, a flow rate of the etching gas.
    Type: Application
    Filed: September 20, 2005
    Publication date: February 2, 2006
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yoshitaka Saita, Masashi Yamaguchi
  • Method and apparatus for etching Si
    Patent number: 6972264
    Abstract: A method for dry-etching a Si substrate or a Si layer in a processing chamber includes the step of supplying an etching gas into the processing chamber, wherein the etching gas is a mixture gas including Cl2, O2 and NF3 and a residence time ? of the etching gas is equal to or greater than about 180 msec, the residence time ? being defined as: ?=pV/Q where p represents an inner pressure of the processing chamber; V, an effective volume of etching space formed on the Si substrate or the Si layer; and Q, a flow rate of the etching gas.
    Type: Grant
    Filed: September 5, 2003
    Date of Patent: December 6, 2005
    Assignee: Tokyo Electron Limited
    Inventors: Yoshitaka Saita, Masashi Yamaguchi
  • Processing method and processing system
    Publication number: 20040260420
    Abstract: The present invention is a processing method including a processing step of performing predetermined processing for a workpiece; an unnecessary portion removal step of removing an unnecessary portion produced on a surface of the workpiece due to the predetermined processing; and a surface structure evaluation step of evaluating a surface structure of the workpiece from which the unnecessary portion has been removed by the unnecessary portion removal step.
    Type: Application
    Filed: June 18, 2004
    Publication date: December 23, 2004
    Applicant: Tokyo Electron Limited.
    Inventors: Tsuyoshi Ohno, Toshihiko Kikuchi, Machi Moriya, Yoshitaka Saita
  • Method and apparatus for etching Si
    Publication number: 20040048487
    Abstract: A method for dry-etching a Si substrate or a Si layer in a processing chamber includes the step of supplying an etching gas into the processing chamber, wherein the etching gas is a mixture gas including Cl2, O2 and NF3 and a residence time &tgr; of the etching gas is equal to or greater than about 180 msec, the residence time &tgr; being defined as:
    Type: Application
    Filed: September 5, 2003
    Publication date: March 11, 2004
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yoshitaka Saita, Masashi Yamaguchi