Abstract: Proposed are a data collection and distribution method, a data collection and distribution apparatus and a program which enable the convenience of a data provider to be improved. A data collection and distribution apparatus, which acquires and stores collected data collected by a data collection client and distributes the collected data to a data destination client, determines whether or not an attribute of the collected data collected from the data collection client is at variance with an attribute according to a prior arrangement, determines a collected data processing method based on a determination result, and selectively distributes the collected data of the attribute according to the prior arrangement to the data destination client based on a determination result.

Abstract: Provided is a rubber-steel cord composite which is excellent in workability and which is markedly excellent in tensile characteristics, an adhesive property after vulcanization for a short time and a heat resistant adhesive property. The rubber-steel cord composite has such a constitution that a steel cord which has a brass-plated layer on a peripheral surface thereof and in which a content of phosphorus contained in the form of oxide in a wire surface layer region extending from a surface of the above brass-plated layer up to a depth of 5 nm in a wire radial direction toward the inside is 1.5 atomic % or less is adjacent to a rubber composition containing a rubber component, sulfur and a sulfeneamide base vulcanization accelerator represented by the following Formula (I): wherein R1, R2, R3, R4, R5, R6; x and n are as defined in the specification.

Abstract: It is to provide a high-elasticity rubber composition having a good workability while preventing the deterioration of rubber properties and capable of reducing rubber burning as far as possible by using a vulcanization accelerator having a retarding effect equal to or more than that of DCBS without using a retarder such as CTP possibly causing the deterioration of rubber properties after the vulcanization and problems such as blooming and the like and capable of realizing a higher elasticity and excellent low heat-buildup. The rubber composition according to the invention is characterized by comprising a rubber component, a sulfenamide-based vulcanization accelerator represented by a formula (I), a bismaleimide derivative represented by a formula (II) and sulfur.

Abstract: A rubber composition comprises a rubber component, sulfur and a sulfeneamide base vulcanization accelerator represented by the following Formula (I), and has an excellent adhesive property with metal such as a steel cord without bringing about problems such as deteriorating in the physical properties and blooming of rubber after vulcanization. (wherein R1 represents a branched alkyl group having 3 to 12 carbon atoms; R2 represents a linear alkyl group having 1 to 10 carbon atoms or a branched alkyl group having 3 to 10 carbon atoms; x represents an integer of 1 or 2, and n represents an integer of 0 or 1).

Abstract: A rubber composition comprising 0.3 to 10 parts by mass of sulfur and 0.1 to 10 parts by mass of a sulfeneamide base vulcanization accelerator represented by the following Formula (I) based on 100 parts by mass of a rubber component: (wherein R1 to R10 are a hydrogen atom, a linear alkyl group having 1 to 4 carbon atoms or a branched alkyl group having 3 to 4 carbon atoms, and they may be the same or different; R11 is a hydrogen atom, a linear alkyl group having 1 to 10 carbon atoms or a branched alkyl group having 3 to 10 carbon atoms; R12 to R15 are a hydrogen atom, a linear alkyl group or alkoxy group having 1 to 4 carbon atoms or a branched alkyl group or alkoxy group having 3 to 4 carbon atoms, and they may be the same or different; and x represents an integer of 1 or 2).

Abstract: This invention is to provide rubber composition having vulcanization retarding effect that is as same as or greater than that of DCBS, maintaining favorable working ability and providing excellent adherence to the metal, without the use of current vulcanization retarder, such as CTP that may generate problems of decreased physical properties of rubber and blooming after vulcanization. The rubber composition of the invention comprises rubber component, sulfenamide-containing vulcanization accelerator represented by formula (I), and sulfur.

Abstract: Provided is a rubber-steel cord composite which is excellent in workability and which is markedly excellent in tensile characteristics, an adhesive property after vulcanization for a short time and a heat resistant adhesive property. The rubber-steel cord composite has such a constitution that a steel cord which has a brass-plated layer on a peripheral surface thereof and in which a content of phosphorus contained in the form of oxide in a wire surface layer region extending from a surface of the above brass-plated layer up to a depth of 5 nm in a wire radial direction toward the inside is 1.5 atomic % or less is adjacent to a rubber composition containing a rubber component, sulfur and a sulfeneamide base vulcanization accelerator represented by the following Formula (I): wherein R1, R2, R3, R4, R5, R6; x and n are as defined in the specification.

Abstract: It is to provide a high-elasticity rubber composition having a good workability while preventing the deterioration of rubber properties and capable of reducing rubber burning as far as possible by using a vulcanization accelerator having a retarding effect equal to or more than that of DCBS without using a retarder such as CTP possibly causing the deterioration of rubber properties after the vulcanization and problems such as blooming and the like and capable of realizing a higher elasticity and excellent low heat-buildup. The rubber composition according to the invention is characterized by comprising a rubber component, a sulfenamide-based vulcanization accelerator represented by a formula (I), a bismaleimide derivative represented by a formula (II) and sulfur.

Abstract: It is to provide a high-elasticity rubber composition having a good workability while preventing the deterioration of fracture resistance of rubber and capable of reducing rubber burning as far as possible by using a vulcanization accelerator having a retarding effect equal to or more than that of the conventional vulcanization accelerator without using a retarder such as CTP possibly causing the deterioration of rubber properties after the vulcanization and problems such as blooming and the like. The rubber composition according to the invention is characterized by comprising a rubber component, a sulfenamide-based vulcanization accelerator represented by a formula (I), a phenolic resin, a methylene donor and sulfur.

Abstract: It is to provide a high-elasticity rubber composition having a good workability and an excellent crack resistance while preventing the deterioration of rubber properties by using a vulcanization accelerator having a retarding effect equal to or more than that of DCBS without using a retarder such as CTP possibly causing the deterioration of rubber properties after the vulcanization and problems such as blooming and the like. The rubber composition according to the invention is characterized by comprising a rubber component, a sulfenamide-based vulcanization accelerator represented by a formula (I), trans-polybutadiene and sulfur.

Abstract: Provided are a rubber composition which is remarkably reduced in generation of rubber burning and excellent in degradation durability and which has a high elastic modulus and a rubber composition which exerts a high heat resistant adhesive property and a wet heat adhesive property and which is excellent in an adhesive property with metal such as a steel cord.

Abstract: [Problem]Provided is a rubber composition which is remarkably reduced in generation of rubber burning and is excellent in an adhesive property with metal such as a steel cord and which exerts a stable adhesive property with less change with the passage of time while maintaining processability and a high wet heat resistant adhesive property in compounding.

Abstract: A rubber composition comprises a rubber component, sulfur and a sulfeneamide base vulcanization accelerator represented by the following Formula (I), and has an excellent adhesive property with metal such as a steel cord without bringing about problems such as deteriorating in the physical properties and blooming of rubber after vulcanization. (wherein R1 represents a branched alkyl group having 3 to 12 carbon atoms; R2 represents a linear alkyl group having 1 to 10 carbon atoms or a branched alkyl group having 3 to 10 carbon atoms; x represents an integer of 1 or 2, and n represents an integer of 0 or 1).

Abstract: A semiconductor device includes a semiconductor substrate having a main surface; an element separation film formed on the main surface in an element separation area and extending in a first direction; and a semiconductor element formed on the main surface in an active area and arranged in a second direction perpendicular to the first direction. The semiconductor element includes a metal silicide film. The metal silicide film includes a first portion adjacent to the element separation film. The semiconductor device further includes an interlayer insulation film formed on the main surface of the semiconductor substrate; a wiring portion formed on the interlayer insulation film; and a conductive plug formed in the interlayer insulation film for electrically connecting the semiconductor elements and the wiring portion. The conductive plug is situated on the element separation film and the metal silicide film.

Abstract: A rubber composition comprising 0.3 to 10 parts by mass of sulfur and 0.1 to 10 parts by mass of a sulfeneamide base vulcanization accelerator represented by the following Formula (I) based on 100 parts by mass of a rubber component: (wherein R1 to R10 are a hydrogen atom, a linear alkyl group having 1 to 4 carbon atoms or a branched alkyl group having 3 to 4 carbon atoms, and they may be the same or different; R11 is a hydrogen atom, a linear alkyl group having 1 to 10 carbon atoms or a branched alkyl group having 3 to 10 carbon atoms; R12 to R15 are a hydrogen atom, a linear alkyl group or alkoxy group having 1 to 4 carbon atoms or a branched alkyl group or alkoxy group having 3 to 4 carbon atoms, and they may be the same or different; and x represents an integer of 1 or 2).

Abstract: A semiconductor device includes a first field effect transistor and a second field effect transistor. The first field effect transistor includes a first gate electrode formed; first impurity diffused areas; and first sidewall portions. The first sidewall portions include a first lower insulation film and a first charge accumulation film. The second field effect transistor includes a second gate electrode; second impurity diffused areas; and second sidewall portions. The second sidewall portions include a second lower insulation film and a second charge accumulation film. The first lower insulation film contains one of a silicon thermal oxide film and a non-doped silicate glass, and the second lower insulation film contains a non-doped silicate glass. The second sidewall portions have a width along a gate longitudinal direction larger than that of the first sidewall portions. The second lower insulation film has a thickness larger than that of the first lower insulation film.

Abstract: A semiconductor device includes a first field effect transistor and a second field effect transistor. The first field effect transistor includes a first gate electrode formed; first impurity diffused areas; and first sidewall portions. The first sidewall portions include a first lower insulation film and a first charge accumulation film. The second field effect transistor includes a second gate electrode; second impurity diffused areas; and second sidewall portions. The second sidewall portions include a second lower insulation film and a second charge accumulation film. The first lower insulation film contains one of a silicon thermal oxide film and a non-doped silicate glass, and the second lower insulation film contains a non-doped silicate glass. The second sidewall portions have a width along a gate longitudinal direction larger than that of the first sidewall portions. The second lower insulation film has a thickness larger than that of the first lower insulation film.

Abstract: A semiconductor device includes a first field effect transistor and a second field effect transistor. The first field effect transistor includes a first gate electrode formed; first impurity diffused areas; and first sidewall portions. The first sidewall portions include a first lower insulation film and a first charge accumulation film. The second field effect transistor includes a second gate electrode; second impurity diffused areas; and second sidewall portions. The second sidewall portions include a second lower insulation film and a second charge accumulation film. The first lower insulation film contains one of a silicon thermal oxide film and a non-doped silicate glass, and the second lower insulation film contains a non-doped silicate glass. The second sidewall portions have a width along a gate longitudinal direction larger than that of the first sidewall portions. The second lower insulation film has a thickness larger than that of the first lower insulation film.

Abstract: A semiconductor device includes a first field effect transistor and a second field effect transistor. The first field effect transistor includes a first gate electrode formed; first impurity diffused areas; and first sidewall portions. The first sidewall portions include a first lower insulation film and a first charge accumulation film. The second field effect transistor includes a second gate electrode; second impurity diffused areas; and second sidewall portions. The second sidewall portions include a second lower insulation film and a second charge accumulation film. The first lower insulation film contains one of a silicon thermal oxide film and a non-doped silicate glass, and the second lower insulation film contains a non-doped silicate glass. The second sidewall portions have a width along a gate longitudinal direction larger than that of the first sidewall portions. The second lower insulation film has a thickness larger than that of the first lower insulation film.

Abstract: A semiconductor device includes a semiconductor substrate having a main surface; an element separation film formed on the main surface in an element separation area and extending in a first direction; and a semiconductor element formed on the main surface in an active area and arranged in a second direction perpendicular to the first direction. The semiconductor element includes a metal silicide film. The metal silicide film includes a first portion adjacent to the element separation film. The semiconductor device further includes an interlayer insulation film formed on the main surface of the semiconductor substrate; a wiring portion formed on the interlayer insulation film; and a conductive plug formed in the interlayer insulation film for electrically connecting the semiconductor elements and the wiring portion. The conductive plug is situated on the element separation film and the metal silicide film.