Patents by Inventor Yoshitaka Sugita

Yoshitaka Sugita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230244020
    Abstract: The multilayer structure used to be deformed by bending with a first member outside, includes the first member, a first adhesive layer, a second member having one surface joined to one surface of the first member at least via the first adhesive layer, a second adhesive layer, and a first structure having one surface joined to the other surface of the second member at least via the second adhesive layer. The first structure includes a third member on a surface in contact with the second adhesive layer, including, on a surface in contact with the second adhesive layer, a layer that is likely to be broken when deformed. Hardness of each of the first and second adhesive layer is determined such that when the multilayer structure is deformed, the extension of the layer likely to be broken is reduced to a value lower than the tensile breaking extension thereof.
    Type: Application
    Filed: October 5, 2020
    Publication date: August 3, 2023
    Inventors: Takanobu YANO, Shou TAKARADA, Takeshi NAKANO, Koji SHITARA, Yoshitaka SUGITA, Kazutaka MINOURA
  • Publication number: 20230085705
    Abstract: A gas sensing device is provided. The gas sensing device includes a substrate, a sensing film deposited on the substrate, and a plurality of electrodes deposited on the sensing film. The sensing film comprising ReNiO3, wherein Re is a rare-earth cation wherein. At least one of the electrodes including platinum, palladium, or a combination thereof. The electrodes are spaced apart from each other for measurement of electrical resistance.
    Type: Application
    Filed: October 30, 2020
    Publication date: March 23, 2023
    Applicant: Purdue Research Foundation
    Inventors: Shriram Ramanathan, Yifei Sun, Yoshitaka Sugita
  • Publication number: 20220229339
    Abstract: An electrochromic structure is disclosed, which includes a first transparent non-conductive (GLASS-I) layer, a first transparent conductor (CONDUCTOR-I) layer coupled to the GLASS-I layer, an ion storage layer coupled to the CONDUCTOR-I layer, an electrolyte layer coupled to the ion storage layer, an electrochromic layer coupled to the electrolyte layer, a second transparent conductor (CONDUCTOR-II) layer coupled to the electrochromic layer, and a second transparent non-conductive (GLASS-II) layer coupled to the CONDUCTOR-II layer, wherein the electrochromic layer includes perovskite nickelates thin films formed on a transparent conductive film substrate and which has crystalline grains of the size of about 5 nm to about 200 nm resulting in intergranular porosity of about 5% to about 25%.
    Type: Application
    Filed: July 17, 2020
    Publication date: July 21, 2022
    Applicant: Purdue Research Foundation
    Inventors: Yifei SUN, Shriram RAMANATHAN, Yoshitaka SUGITA
  • Publication number: 20210349245
    Abstract: An optical member is arranged on a viewer-side of an image display panel. The optical member includes a circular polarizing plate having a first principal surface and a second principal surface, and a patterned light reflection layer arranged on a first principal surface-side of the circular polarizing plate. The circular polarizing plate is configured such that light incident from a second principal surface-side to a first principal surface-side is emitted as circular polarized light. The light reflection layer has a light-shielding property, and is configured to reflect light from a circular polarizing plate-side with fixed-end reflection.
    Type: Application
    Filed: June 11, 2019
    Publication date: November 11, 2021
    Applicant: NITTO DENKO CORPORATION
    Inventors: Takanobu Yano, Yoshitaka Sugita, Masayoshi Katagiri
  • Publication number: 20110146773
    Abstract: A photoelectric conversion device comprising: a pin-type photoelectric conversion layer constituted of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, wherein the p-type semiconductor layer contains silicon atoms and nitrogen atoms, which is possible to improve photoelectric conversion efficiency.
    Type: Application
    Filed: February 22, 2011
    Publication date: June 23, 2011
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Kazuhito Nishimura, Yoshiyuki Nasuno, Hiroshi Yamamoto, Yoshitaka Sugita
  • Patent number: 7915520
    Abstract: A photoelectric conversion device comprising: a pin-type photoelectric conversion layer constituted of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, wherein the p-type semiconductor layer contains silicon atoms and nitrogen atoms, which is possible to improve photoelectric conversion efficiency.
    Type: Grant
    Filed: March 24, 2005
    Date of Patent: March 29, 2011
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Kazuhito Nishimura, Yoshiyuki Nasuno, Hiroshi Yamamoto, Yoshitaka Sugita
  • Publication number: 20050229965
    Abstract: A photoelectric conversion device comprising: a pin-type photoelectric conversion layer constituted of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, wherein the p-type semiconductor layer contains silicon atoms and nitrogen atoms, which is possible to improve photoelectric conversion efficiency.
    Type: Application
    Filed: March 24, 2005
    Publication date: October 20, 2005
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Kazuhito Nishimura, Yoshiyuki Nasuno, Hiroshi Yamamoto, Yoshitaka Sugita