Abstract: A light-emitting element includes: a light emitting layer formed of an i-type layered nitride semiconductor; a first semiconductor layer that is disposed on one surface of the light emitting layer, and is formed of a p-type layered nitride semiconductor or p-type diamond; and a second semiconductor layer that is disposed on the other surface of the light emitting layer, and is formed of an n-type layered nitride semiconductor.

Abstract: By widening a terrace on a crystal surface on a bottom face of a recess by step flow caused by heating, a flat face is formed on the bottom face of the recess, a two-dimensional material layer made of a two-dimensional material is formed on the formed flat face, and then a device made of the two-dimensional material layer is produced.

Abstract: A material exhibiting transport phenomena of Weyl fermions is composed of SrRuO3 and has a ratio of a resistivity p at 300 K to a resistivity p at 4 K [residual resistivity ratio RRR=?(300 K)/?(4 K)] of 20 or greater.

Abstract: A magnetic material is constituted of a ferromagnetic or ferrimagnetic insulator in a double perovskite structure of Sr3-xAxOs1-yByO6 (0.5?x?0.5, ?0.5?y?0.5). A is an alkali metal or alkaline earth metal atom, and B is a transition metal atom, alkali metal atom, or alkaline earth metal atom). The insulator may be Sr3OsO6, where x=y=0 in the above formula. Sr3OsO6 is formed to have a cubic crystal structure where strontium atoms, osmium atoms, and oxygen atoms are arranged at lattice points.

Abstract: A p-type semiconductor layer includes a plurality of unit semiconductor layers, and each of the plurality of unit semiconductor layers includes a p-type nitride semiconductor whose main surface is a polar surface or a semi-polar surface. The nitride semiconductor constituting the unit semiconductor layer includes nitrogen and two or more elements, and each of the plurality of unit semiconductor layers has a composition changing in a stacking direction such that, for example, a lattice constant in a c-axis direction increases in a c-axis positive direction.

Abstract: By widening a terrace on a crystal surface on a bottom face of a recess by step flow caused by heating, a flat face is formed on the bottom face of the recess, a two-dimensional material layer made of a two-dimensional material is formed on the formed flat face, and then a device made of the two-dimensional material layer is produced.

Abstract: A magnetic material is constituted of a ferromagnetic or ferrimagnetic insulator in a double perovskite structure of Sr3-xAxOs1-yByO6 (0.5?x?0.5, ?0.5?y?0.5). A is an alkali metal or alkaline earth metal atom, and B is a transition metal atom, alkali metal atom, or alkaline earth metal atom). The insulator may be Sr3OsO6, where x=y=0 in the above formula. Sr3OsO6 is formed to have a cubic crystal structure where strontium atoms, osmium atoms, and oxygen atoms are arranged at lattice points.