Abstract: A resin composition for semiconductor encapsulation, containing (A) an epoxy resin, (B) a phenolic resin-based curing agent, (C) an inorganic filler, and (D) amorphous carbon, wherein the amorphous carbon of the component (D) contains 30 atomic % or more of an SP3 structure and 55 atomic % or less of an SP2 structure.

Abstract: A lithium-ion secondary battery anode according to an embodiment includes a current collector and an active material layer. The active material layer is disposed on the current collector. The active material layer includes a plurality of needle-shaped bodies that contain silicon. The needle-shaped bodies are fusion-bonded to the current collector.

Abstract: A resin composition for semiconductor encapsulation, containing (A) an epoxy resin, (B) a phenolic resin-based curing agent, (C) an inorganic filler, and (D) amorphous carbon, wherein the amorphous carbon of the component (D) contains 30 atomic % or more of an SP3 structure and 55 atomic % or less of an SP2 structure.

Abstract: [Object] To efficiently recover tungsten from an object containing tungsten by a simple treatment process using a microorganism with reduced environmental load. [Solution] A method for recovering a tungsten compound is provided which includes the step of preparing a tungsten compound solution in which tungsten-containing polyatomic ions are dissolved, by eluting the metal component of an object containing tungsten into an alkaline solution; the adsorption step of adsorbing the tungsten-containing polyatomic ions to a microorganism by introducing the microorganism to the tungsten compound solution and adjusting the tungsten compound solution to an acidic level; and the collecting and washing step of collecting the microorganism to which the tungsten-containing polyatomic ions are adsorbed and washing the microorganism.

Abstract: [Object] To efficiently recover tungsten from an object containing tungsten by a simple treatment process using a microorganism with reduced environmental load. [Solution] A method for recovering a tungsten compound is provided which includes the step of preparing a tungsten compound solution in which tungsten-containing polyatomic ions are dissolved, by eluting the metal component of an object containing tungsten into an alkaline solution; the adsorption step of adsorbing the tungsten-containing polyatomic ions to a microorganism by introducing the microorganism to the tungsten compound solution and adjusting the tungsten compound solution to an acidic level; and the collecting and washing step of collecting the microorganism to which the tungsten-containing polyatomic ions are adsorbed and washing the microorganism.

Abstract: A NRD guide includes a pair of parallel plate conductors opposed to each other at a spacing equal to or shorter than half the wavelength of a high-frequency signal to be transmitted and having opposing inner surfaces whose arithmetic average roughness Ra satisfies 0.1 ?m?Ra?50 ?m, and a dielectric strip arranged between the pair of parallel plate conductors and held in contact with the respective inner surfaces of the parallel plate conductors. The dielectric strip is strongly secured to the inner surfaces to exhibit an excellent durability. The transmission loss of the high-frequency signal can be effectively suppressed.

Abstract: A NRD guide includes a pair of parallel plate conductors opposed to each other at a spacing equal to or shorter than half the wavelength of a high-frequency signal to be transmitted and having opposing inner surfaces whose arithmetic average roughness Ra satisfies 0.1 &mgr;m≦Ra≦50 &mgr;m, and a dielectric strip arranged between the pair of parallel plate conductors and held in contact with the respective inner surfaces of the parallel plate conductors. The dielectric strip is strongly secured to the inner surfaces to exhibit an excellent durability. The transmission loss of the high-frequency signal can be effectively suppressed.

Abstract: Ceramics comprising filler crystal particles having an average particle diameter of not smaller than 2.5 &mgr;m and a matrix crystal phase present on the grain boundaries of the filler crystal particles, the filler crystal particles being Al2O3 and the matrix crystal phase being diopside-type oxide crystals precipitated from the crystallized glass. The ceramics has a dielectric loss tangent at 60 to 77 GHz of not higher than 50×10−4, and can be effectively used as an insulating substrate in a wiring board for transmitting high-frequency signals.

Abstract: Ceramics containing a diopside crystal phase and a cordierite phase, the remainder being a glass phase and/or other ceramic crystal phases, and having an open porosity of not larger than 1%. The ceramics is obtained by firing at from 800 to 1050° C., and exhibits a dielectric constant of not larger than 7 and a small dielectric loss in a high-frequency region, a ceramic strength of not smaller than 250 MPa, and a coefficient of thermal expansion close to those of the chips such as of Si and Ga—As and of the printed board.

Abstract: The porcelain of the present invention comprises 5 to 70% by weight of a non-oxide ceramic filler and 30 to 95% by weight of a borosilicate glass having a glass transition temperature of 800° C. or lower, wherein a weight loss per unit surface area of said non-oxide ceramics is not more than 0.15 g/cm2 after dipping said non-oxide ceramic having purity of not less than 96% by weight for five minutes in a glass melt obtained by melting said borosilicate glass with heating at 1200° C. Since the porcelain composition can be fired at a low temperature together with a low-resistance metal, the resulting porcelain has a high thermal conductivity, a low dielectric constant, a high heat dissipation property and a reduced apparent signal delay in a high frequency signal and is suited for use as an insulating board in a wiring board.

Abstract: Disclosed is a glass ceramic sintered product which contains as crystal phases: (i) a gahnite crystal phase; (ii) a celsian crystal phase containing needle-like crystals having an aspect ratio of not smaller than 3; and (iii) at least one kind of crystal phase selected from the group consisting of AlN, Si3N4, SiC, Al2O3, ZrO2, 3Al2O3.2SiO2 and Mg2SiO4; and has an open porosity of not larger than 0.3%. The glass ceramic sintered product is highly strong, has a high heat conductivity, a high Young's modulus, is dense, and can be produced through the firing at a low temperature of not higher than 1000° C., and is very useful as an insulating substrate that has wiring layers of a low-resistance conductor such as Cu, Ag or Au on the surface thereof or in the inside thereof.

Abstract: High-frequency ceramics containing SiO2, Al2O3, MgO, ZnO and B2O3 as constituent components, said ceramics comprising: 30 to 50% by weight of a crystal phase containing ZnO and Al2O3; 5 to 15% by weight of a crystal phase containing SiO2 and MgO; and 40 to 60% by weight of an amorphous phase comprising substantially SiO2 or SiO2 and B2O3; wherein the content of the SiO2 crystal phase is suppressed to be not larger than 6% by weight. The ceramics has a dielectric loss at 60 GHz of not larger than 15×10−4, exhibiting excellent high-frequency characteristics, and is very useful as an insulating substrate for the wiring boards that deal with high-frequency signals.

Abstract: High-frequency ceramics containing SiO2, Al2O3, MgO, ZnO and B2O3 as constituent components, said ceramics comprising: 30 to 50% by weight of a crystal phase containing ZnO and Al2O3; 5 to 15% by weight of a crystal phase containing SiO2 and MgO; and 40 to 60% by weight of an amorphous phase comprising substantially SiO2 or SiO2 and B2O3; wherein the content of the SiO2 crystal phase is suppressed to be not larger than 6% by weight. The ceramics has a dielectric loss at 60 GHz of not larger than 15×10−4, exhibiting excellent high-frequency characteristics, and is very useful as an insulating substrate for the wiring boards that deal with high-frequency signals.

Abstract: Ceramics containing a diopside crystal phase and a cordierite phase, the remainder being a glass phase and/or other ceramic crystal phases, and having an open porosity of not larger than 1%. The ceramics is obtained by firing at from 800 to 1050° C., and exhibits a dielectric constant of not larger than 7 and a small dielectric loss in a high-frequency region, a ceramic strength of not smaller than 250 MPa, and a coefficient of thermal expansion close to those of the chips such as of Si and Ga—As and of the printed board.

Abstract: Disclosed is a glass ceramic sintered product which contains as crystal phases:

Abstract: The porcelain of the present invention comprises 5 to 70% by weight of a non-oxide ceramic filler and 30 to 95% by weight of a borosilicate glass having a glass transition temperature of 800° C. or lower, wherein a weight loss per unit surface area of said non-oxide ceramics is not more than 0.15 g/cm2 after dipping said non-oxide ceramic having purity of not less than 96% by weight for five minutes in a glass melt obtained by melting said borosilicate glass with heating at 1200° C. Since the porcelain composition can be fired at a low temperature together with a low-resistance metal, the resulting porcelain has a high thermal conductivity, a low dielectric constant, a high heat dissipation property and a reduced apparent signal delay in a high frequency signal and is suited for use as an insulating board in a wiring board.

Abstract: Ceramics comprising filler crystal particles having an average particle diameter of not smaller than 2.5 &mgr;m and a matrix crystal phase present on the grain boundaries of the filler crystal particles, the filler crystal particles being Al2O3 and the matrix crystal phase being diopside-type oxide crystals precipitated from the crystallized glass. The ceramics has a dielectric loss tangent at 60 to 77 GHz of not higher than 50×10−4, and can be effectively used as an insulating substrate in a wiring board for transmitting high-frequency signals.

Abstract: Dielectric ceramics comprising a diopside oxide crystal phase, at least one kind of crystal phase selected from the group consisting of a quartz crystal phase and a composite oxide crystal phase containing Ti and Mg or Zn, and a glass phase of an amount of not larger than 30% by weight, said dielectric ceramics having a coefficient of thermal expansion of not smaller than 5.5 ppm/° C. at room temperature to 400° C. and a dielectric loss of not larger than 30×10−4 at 60 to 77 GHz. The ceramics can be obtained by the co-firing with a low-resistance metal such as copper or silver, and can be advantageously used for the production of wiring boards to which the signals of particularly high frequencies are applied. The ceramics has a large coefficient of thermal expansion which can be brought close to the coefficient of thermal expansion of the semiconductor element such as of GaAs or of the printed board.

Abstract: Ceramics for wiring boards having an SiO2 crystal phase, a spinel type oxide crystal phase containing Mg or Zn and Al and a composite oxide type crystal phase containing at least Sr, Al and Si, and having a coefficient of thermal expansion of not smaller than 5.5 ppm/° C. at room temperature through up to 400° C., a dielectric constant of not larger than 7, and a dielectric loss of not larger than 50×10−4 at 20 to 30 GHz. The ceramics can be obtained by the co-firing with a low-resistance metal such as copper or silver, and can be advantageously applied for the production of a wiring board for treating, particularly, signals of high frequencies. Furthermore, the ceramics has a coefficient of thermal expansion which is so large as can be brought close to the coefficient of thermal expansion of the semiconductor element such as GaAs or of the printed board.

Abstract: The ceramic sintered body of this invention contains at least 14.9% by weight of Si calculated as SiO.sub.2, 1 to 84.9% by weight of Zn calculated as ZnO, 0.1 to 15% by weight of B calculated as B.sub.2 O.sub.3 and 0.1 to 10% by weight of Li calculated as Li.sub.2 O, and especially, a quartz crystal phase and a willemite crystal phase are precipitated. This sintered body has low dielectric constant and low dielectric loss in a high frequency region, and the thermal expansion coefficient at room temperature to 400.degree. C. can be adjusted to 1.5 to 17 ppm/.degree. C. For this reason, this sintered body is extremely useful as an insulated substrate for use in a wiring board for transmitting high frequency signals.