Abstract: Connection with a wiring structure can be reliably achieved, whereby a semiconductor sensor device and a semiconductor sensor device manufacturing method with increased reliability are provided. A semiconductor sensor device in which a multiple of signal lines and a sensor detection portion are disposed includes a conductive film, disposed on a substrate, that configures the signal lines and whose upper face is exposed by an aperture portion of a width smaller than a width of the signal lines, a conductive member formed on the conductive film and electrically connected to the conductive film via the aperture portion, and a wiring structure, formed on an upper face of the conductive member, of an air bridge structure that connects the signal lines or the signal lines and the sensor detection portion, wherein an upper surface of the conductive member is in contact with the wiring structure, and a side face is exposed.

Abstract: Connection with a wiring structure can be reliably achieved, whereby a semiconductor sensor device and a semiconductor sensor device manufacturing method with increased reliability are provided. A semiconductor sensor device in which a multiple of signal lines and a sensor detection portion are disposed includes a conductive film, disposed on a substrate, that configures the signal lines and whose upper face is exposed by an aperture portion of a width smaller than a width of the signal lines, a conductive member formed on the conductive film and electrically connected to the conductive film via the aperture portion, and a wiring structure, formed on an upper face of the conductive member, of an air bridge structure that connects the signal lines or the signal lines and the sensor detection portion, wherein an upper surface of the conductive member is in contact with the wiring structure, and a side face is exposed.

Abstract: There is provided a sensor element including: a semiconductor base member having a first main surface and a second main surface located opposite to the first main surface, and having a cavity structure formed on the second main surface side; and a detection element formed on the first main surface side in a region where the cavity structure is formed, the second main surface of the semiconductor base member including a convexly and concavely shaped portion, and a tip of a convex portion of the convexly and concavely shaped portion having a curved shape.

Abstract: The flow rate detection device includes a sensor element and a support. The sensor element includes: a cavity which is formed in a rear surface of a plate-shaped semiconductor silicon substrate by removing part of the plate-shaped semiconductor silicon substrate; and a thin film portion which is disposed over the cavity and includes a detecting element. The support includes a fitting portion into which the sensor element is to be disposed. The sensor element is supported to the fitting portion by an adhesive in a floating manner. A gap formed between the sensor element and the fitting portion is filled with an anti-undercurrent material. The sensor element has a texture including protrusions and depressions formed on a surface opposed to the fitting portion, and the anti-undercurrent material is brought into contact with the texture.

Abstract: The flow rate detection device includes a sensor element and a support. The sensor element includes: a cavity which is formed in a rear surface of a plate-shaped semiconductor silicon substrate by removing part of the plate-shaped semiconductor silicon substrate; and a thin film portion which is disposed over the cavity and includes a detecting element. The support includes a fitting portion into which the sensor element is to be disposed. The sensor element is supported to the fitting portion by an adhesive in a floating manner. A gap formed between the sensor element and the fitting portion is filled with an anti-undercurrent material. The sensor element has a texture including protrusions and depressions formed on a surface opposed to the fitting portion, and the anti-undercurrent material is brought into contact with the texture.

Abstract: A sensor chip breaking strength inspection apparatus that performs sensor chip breaking strength inspection on a semiconductor wafer on which a plurality of sensor chips having a diaphragm portion are disposed includes: a stage on which the semiconductor wafer is mounted; and a nozzle that emits a medium onto the sensor chips at a pressure equivalent to a standard breaking strength of the sensor chips.

Abstract: A sensor chip breaking strength inspection apparatus that performs sensor chip breaking strength inspection on a semiconductor wafer on which a plurality of sensor chips having a diaphragm portion are disposed includes: a stage on which the semiconductor wafer is mounted; and a nozzle that emits a medium onto the sensor chips at a pressure equivalent to a standard breaking strength of the sensor chips.

Abstract: A water-repellent layer is formed on a light-receiving surface of a solar battery prior to the formation of a coated-film electrode. The coated-film electrode is formed by screen-printing a coating solution on the water-repellent layer. The coating solution is restricted from spreading on the surface of the water-repellent layer and a narrow ridge-shaped coated-film electrode is formed. Thus, the front electrode is smaller in width and larger in height, so received light loss and transmission loss are decreased.

Abstract: A process of forming electrodes is simplified during modularizing of a solar battery. According to the manufacturing method and the manufacturing apparatus, a thin solar battery is manufactured at a reduced cost and with a better yield. Using a robot which includes a suction chip which can handle a semiconductor film 2 without any damage which is separated from a particular substrate 1, the semiconductor films 2 are each accurately placed through a transparent resin 3 onto a glass substrate 7 which serves as a window of a solar battery, and p-type and n-type electrodes are printed at a time on the semiconductor films 2 which are arranged. Further, since a monolithic tab electrode is soldered to connect the electrodes, the manufacturing processes of the solar battery are simplified.

Abstract: A semiconductor device fabrication method for simple and high-reliability electrode formation capable of increasing a bond strength with solder when performing wiring through soldering. To form an electrode on a semiconductor substrate having a junction, the pattern of an aluminum paste electrode having an opening is formed and thereafter, the pattern of a silver-aluminum paste electrode or silver paste electrode is formed on the opening so as to overlap with the pattern of the electrode. Thereby, it is possible to increase the bond strength with solder of the silver-aluminum paste electrode or silver paste electrode on the opening without being alloyed with the aluminum paste electrode. It is also possible to improve the certainty of the electrical connection between the electrodes because the overlap between the metallic paste patterns is alloyed.

Abstract: A method of making the solar cells includes a step of forming a first electroconductive region on a first surface of a semiconductor substrate having through-holes defined therein and also having an emitter layer formed thereon, a step of disposing the semiconductor substrate on a transparent substrate with a second surface of the semiconductor substrate opposite to the first surface thereof confronting the transparent substrate through a resinous material, a step of bonding the semiconductor substrate and the transparent substrate together by means of the resinous material, and a step of forming a second electroconductive region on the first electroconductive region.

Abstract: A solar battery cell, solar battery module, and solar battery module group achieving high product value by enabling the display of surface patterns without reducing the power generating efficiency of the solar battery cells are provided. The direction and/or reflectance of reflected light incident to the surface of the solar battery cell are varied by controlling the distribution of the rough surface structure imparted to the solar battery cell surface. The direction or reflectance of reflected light incident to the surface of the solar battery cell is changed in part depending upon the part of the semiconductor solar battery cell surface to which the light is incident. Semiconductor solar battery cells with high product value can therefore be achieved because patterns with strong visual impact can be displayed and easily recognized without reducing the power generation efficiency of the solar battery cell.

Abstract: In a method for fabricating a thin film solar cell, a thin semiconductor film serving as a power generating layer is formed on a substrate via an intermediate layer, a plurality of holes are formed penetrating through the thin semiconductor film and reaching the intermediate layer, and the intermediate layer is etched away through the through-holes, separating the thin semiconductor film from the substrate with high-efficiency. Since stress is hardly applied to the thin semiconductor film during the separation process, cracking and breaking of the semiconductor film is avoided. Further, since the surface of the substrate is maintained in good condition, the substrate can be reused, resulting in a reduction in the production cost.