Abstract: A laser beam direct imaging apparatus and an imaging method which can precisely determine a back-surface-side position with respect to a front-surface-side position even if any kind of photosensitive material is used. In the laser direct imaging apparatus, a laser beam is deflected toward a main scanning direction (X-axis direction) while a workpiece mounted on a table is moved in a sub-scanning direction (Y-axis direction) so that a pattern is imaged on the surface of the workpiece. Hollow pins are disposed on the table so that the tips of the hollow pins 20 project over the surface of the table by a predetermined distance. The workpiece is sucked onto the table so that indentations (indentations by the tips of the hollow pins) are formed on the back surface of the workpiece. When a pattern is imaged on the back surface, imaging is performed with reference to the indentations.

Abstract: A parallel glass which is a prism having a parallelogram-shaped cross section in an x-y direction, and parallel glasses which are prisms having a parallelogram-shaped cross section in the x-y direction and each include grooves formed in one surface in a z direction perpendicular to the x-y direction, are stacked in direct contact with each other such that the grooves are located on the inside, and light trying to enter the grooves is subjected is total reflection, thereby changing incident parallel beams with a pitch of 13 mm into emergent parallel beams with a pitch of 1 mm.

Abstract: A laser direct imaging apparatus which can expose photosensitive materials having various sensitivities and which can correct an imaging position in accordance with deformation of a workpiece. In the laser direct imaging apparatus, the workpiece is moved in a sub-scanning direction while a cylindrical lens is used to converge a laser beam, which has been modulated based on raster data, in the sub-scanning direction and deflect the laser beam toward a main scanning direction so as to image a desired pattern on the workpiece. The cylindrical axis of the cylindrical lens is designed to be able to rotate horizontally and to be able to change an angle with respect to the main scanning direction.

Abstract: A laser beam direct imaging apparatus and an imaging method which can precisely determine a back-surface-side position with respect to a front-surface-side position even if any kind of photosensitive material is used. In the laser direct imaging apparatus, a laser beam is deflected toward a main scanning direction (X-axis direction) while a workpiece mounted on a table is moved in a sub-scanning direction (Y-axis direction) so that a pattern is imaged on the surface of the workpiece. Hollow pins are disposed on the table so that the tips of the hollow pins 20 project over the surface of the table by a predetermined distance. The workpiece is sucked onto the table so that indentations (indentations by the tips of the hollow pins) are formed on the back surface of the workpiece. When a pattern is imaged on the back surface, imaging is performed with reference to the indentations.

Abstract: A laser direct imaging apparatus which can expose photosensitive materials having various sensitivities and which can correct an imaging position in accordance with deformation of a workpiece. In the laser direct imaging apparatus, the workpiece is moved in a sub-scanning direction while a cylindrical lens is used to converge a laser beam, which has been modulated based on raster data, in the sub-scanning direction and deflect the laser beam toward a main scanning direction so as to image a desired pattern on the workpiece. The cylindrical axis of the cylindrical lens is designed to be able to rotate horizontally and to be able to change an angle with respect to the main scanning direction.

Abstract: A pattern exposure method and a pattern exposure apparatus in which the throughput is improved with an inexpensive apparatus and without a low running cost. Output faces of a plurality of laser beams emitted from a plurality of semiconductor lasers respectively are arranged in two directions. One of the directions is the same direction as the scanning direction of a polygon mirror while the other is a direction crossing the scanning direction of the polygon mirror. In this event, the array pitch of the output faces arranged in the direction crossing the scanning direction of the polygon mirror is made equal to resolution of an exposure pattern. In this event, the wavelength of each laser may be made not longer than 410 nm.

Abstract: A pattern exposure method and a pattern exposure apparatus in which the throughput is improved with an inexpensive apparatus and without a low running cost. Output faces of a plurality of laser beams emitted from a plurality of semiconductor lasers respectively are arranged in two directions. One of the directions is the same direction as the scanning direction of a polygon mirror while the other is a direction crossing the scanning direction of the polygon mirror. In this event, the array pitch of the output faces arranged in the direction crossing the scanning direction of the polygon mirror is made equal to resolution of an exposure pattern. In this event, the wavelength of each laser may be made not longer than 410 nm.

Abstract: A parallel glass which is a prism having a parallelogram-shaped cross section in an x-y direction, and parallel glasses which are prisms having a parallelogram-shaped cross section in the x-y direction and each include grooves formed in one surface in a z direction perpendicular to the x-y direction, are stacked in direct contact with each other such that the grooves are located on the inside, and light trying to enter the grooves is subjected is total reflection, thereby changing incident parallel beams with a pitch of 13 mm into emergent parallel beams with a pitch of 1 mm.

Abstract: A maskless exposure method and a maskless exposure apparatus in which maskless exposure can be performed efficiently with high-directivity illumination light, while the exposure efficiency of solder resist can be improved. Blue-violet semiconductor lasers 12A emitting laser beams 1a with a wavelength of 405 nm and ultraviolet semiconductor lasers 12B emitting laser beams 1b with a wavelength of 375 nm are provided to irradiate a substrate 8 with the laser beams 1a and 1b whose optical axes are made coaxial. In this event, one and the same place on the substrate 8 is irradiated with the laser beams 1a and 1b a plurality of times. Thus, the variation in intensity of the laser beams 1a and 1b is averaged.

Abstract: A pattern exposure method and a pattern exposure apparatus in which the throughput is improved with an inexpensive apparatus and without a low running cost. Output faces of a plurality of laser beams emitted from a plurality of semiconductor lasers respectively are arranged in two directions. One of the directions is the same direction as the scanning direction of a polygon mirror while the other is a direction crossing the scanning direction of the polygon mirror. In this event, the array pitch of the output faces arranged in the direction crossing the scanning direction of the polygon mirror is made equal to resolution of an exposure pattern. In this event, the wavelength of each laser may be made not longer than 410 nm.

Abstract: There are disclosed a solder bump forming method and an apparatus therefor, which achieve a high reliability, and an electronic part, produced by this method and this apparatus, is also disclosed. For each of the step of arraying solder balls, the step of supplying a flux, and the step of mounting the solder balls on a board, it is checked whether or not any solder ball is omitted, and the process is conducted while confirming the condition of the operation, thereby enhancing the reliability and also preventing defective products from being produced.