Patents by Inventor Yoshiteru Koseki

Yoshiteru Koseki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solid state imaging device having a back surface impurity layer
    Patent number: 8669631
    Abstract: A solid state imaging device according to one embodiment of the present invention includes a substrate with a solid state imaging element, a first impurity layer, a plurality of external electrodes, and a translucent substrate. The first impurity layer is formed on a back surface side of the substrate, and forms a pn junction with the substrate. The plurality of external electrodes is formed on the back surface of the substrate and is electrically connected to the solid state imaging element. The translucent substrate is fixed to the substrate.
    Type: Grant
    Filed: March 16, 2011
    Date of Patent: March 11, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Yoshiteru Koseki
  • Semiconductor device and manufacturing method thereof
    Patent number: 8580652
    Abstract: According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad.
    Type: Grant
    Filed: September 3, 2010
    Date of Patent: November 12, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Atsuko Kawasaki, Kenichiro Hagiwara, Ikuko Inoue, Kazutaka Akiyama, Itsuko Sakai, Mie Matsuo, Masahiro Sekiguchi, Yoshiteru Koseki, Hiroki Neko, Koushi Tozuka, Kazuhiko Nakadate, Takuto Inoue
  • SOLID STATE IMAGING DEVICE, CAMERA MODULE, AND METHOD FOR MANUFACTURING SOLID STATE IMAGING DEVICE
    Publication number: 20110234893
    Abstract: A solid state imaging device according to one embodiment of the present invention includes a substrate with a solid state imaging element, a first impurity layer, a plurality of external electrodes, and a translucent substrate. The first impurity layer is formed on a back surface side of the substrate, and forms a pn junction with the substrate. The plurality of external electrodes is formed on the back surface of the substrate and is electrically connected to the solid state imaging element. The translucent substrate is fixed to the substrate.
    Type: Application
    Filed: March 16, 2011
    Publication date: September 29, 2011
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventor: Yoshiteru KOSEKI
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20110068476
    Abstract: According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad.
    Type: Application
    Filed: September 3, 2010
    Publication date: March 24, 2011
    Inventors: Atsuko KAWASAKI, Kenichiro Hagiwara, Ikuko Inoue, Kazutaka Akiyama, Itsuko Sakai, Mie Matsuo, Masahiro Sekiguchi, Yoshiteru Koseki, Hiroki Neko, Koushi Tozuka, Kazuhiko Nakadate, Takuto Inoue