Abstract: In a beam processing apparatus including a beam scanner having a two electrodes type deflection scanning electrode, the beam scanner further includes shielding suppression electrode assemblies respectively at vicinities of upstream side and downstream side of the two electrodes type deflection scanning electrode and having openings in a rectangular shape for passing a charged particle beam. Each of the shielding suppression electrode assemblies is an assembly electrode comprising one sheet of a suppression electrode and two sheets of shielding ground electrodes interposing the suppression electrode. A total of front side portions and rear side portions of the two electrodes type deflection scanning electrode is shielded by the two sheets of shielding ground electrodes.

Abstract: A beam line before incidence on a beam scanner is arranged with an injector flag Faraday cup that detects a beam current by measuring a total beam amount of an ion beam to be able to be brought in and out thereto and therefrom. When the ion beam is shut off by placing the injector flag Faraday cup on a beam trajectory line, the ion beam impinges on graphite provided at the injector flag Faraday cup. At this occasion, even when the graphite is sputtered by the ion beam, since the injector flag Faraday cup is arranged on an upstream side of the beam scanner and the ion beam is shut off by the injector flag Faraday cup, particles of the sputtered graphite do not adhere to a peripheral member of the injector flag Faraday cup.

Abstract: A multilevel interconnect structure in a semiconductor device comprises a first insulating layer (2) formed on a semiconductor wafer (1), a Cu interconnect layer (4) formed on the first insulating layer (2), a second insulating layer (6) formed on the Cu interconnect layer (4), and a metal oxide layer (5) formed at an interface between the Cu interconnect layer (4) and the second insulating layer (6). The metal oxide layer (5) is formed by immersion-plating a metal, such as Sn or Zn, on the Cu interconnect layer (4) and then heat-treating the plated layer in an oxidizing atmosphere.

Abstract: In a beam processing apparatus including a beam scanner having a two electrodes type deflection scanning electrode, the beam scanner further includes shielding suppression electrode assemblies respectively at vicinities of upstream side and downstream side of the two electrodes type deflection scanning electrode and having openings in a rectangular shape for passing a charged particle beam. Each of the shielding suppression electrode assemblies is an assembly electrode comprising one sheet of a suppression electrode and two sheets of shielding ground electrodes interposing the suppression electrode. A total of front side portions and rear side portions of the two electrodes type deflection scanning electrode is shielded by the two sheets of shielding ground electrodes.

Abstract: A beam line before incidence on a beam scanner is arranged with an injector flag Faraday cup that detects a beam current by measuring a total beam amount of an ion beam to be able to be brought in and out thereto and therefrom. When the ion beam is shut off by placing the injector flag Faraday cup on a beam trajectory line, the ion beam impinges on graphite provided at the injector flag Faraday cup. At this occasion, even when the graphite is sputtered by the ion beam, since the injector flag Faraday cup is arranged on an upstream side of the beam scanner and the ion beam is shut off by the injector flag Faraday cup, particles of the sputtered graphite do not adhere to a peripheral member of the injector flag Faraday cup.