Abstract: To reduce the damage caused due to the degradation of sealing material without complicating the structure of the vacuum sealing material of the vacuum container and to perform cleaning without affecting the lifetime of the sealing material in a plasma processing apparatus, this invention provides a plasma processing apparatus in which a window portion and a processing chamber are coupled to each other with an elastomeric sealing material sandwiched therebetween, and a sealing material is arranged at a position where a ratio of a distance from the inner wall surface of a processing chamber in an interstice portion to the sealing material with respect to the interstice between the window portion and the processing chamber having the sealing material sandwiched there between is 3 or more, in a vacuum state with the air exhausted from the processing chamber by the vacuum exhaust unit.

Abstract: In a plasma processing apparatus, occurrence of unplanned maintenance is predicted in advance so that a time when the work should be incorporated into planned maintenance can be determined. An apparatus diagnostic apparatus including a degradation score estimation unit that receives an output of a sensor mounted on a plasma processing apparatus and estimates a degradation score of the plasma processing device; a maintenance work occurrence probability estimation unit that calculates a probability of occurrence of an unplanned maintenance work that is not included in an original maintenance plan based on the degradation score; an actual maintenance cost calculation unit that calculates an actual maintenance cost; and a plan incorporated maintenance cost calculation unit that outputs a correction plan of maintenance plan in which the original maintenance plan is corrected by incorporating the unplanned maintenance work based on the probability of occurrence of the unplanned maintenance work.

Abstract: To reduce the damage caused due to the degradation of sealing material without complicating the structure of the vacuum sealing material of the vacuum container and to perform cleaning without affecting the lifetime of the sealing material in a plasma processing apparatus, this invention provides a plasma processing apparatus in which a window portion and a processing chamber are coupled to each other with an elastomeric sealing material sandwiched therebetween, and a sealing material is arranged at a position where a ratio of a distance from the inner wall surface of a processing chamber in an interstice portion to the sealing material with respect to the interstice between the window portion and the processing chamber having the sealing material sandwiched there between is 3 or more, in a vacuum state with the air exhausted from the processing chamber by the vacuum exhaust unit.

Abstract: A plasma processing apparatus including a state prediction apparatus that predicts an apparatus state of the plasma processing apparatus configured to include an apparatus data recording unit that records apparatus data output from the plasma processing apparatus during the processing of the sample, a physical environment measurement data recording unit that measures physical environment in the processing chamber and records apparatus physical environment data, data correction unit that extracts a temporal change component of the physical environment from a plurality of the apparatus physical environment data recorded in the physical environment measurement data recording unit and extracts the temporal change component of the physical environment from the apparatus data to remove the temporal change components, and an apparatus state prediction calculation unit that predicts the state of the plasma processing apparatus using the apparatus data from which the temporal change component of the physical environme

Abstract: A system that predicts an apparatus state of a plasma processing apparatus including a processing chamber in which a sample is processed is configured to have a data recording unit that records emission data of plasma during processing of the sample and electrical signal data obtained from the apparatus during the plasma processing, an arithmetic unit that includes a first calculation unit for calculating a first soundness index value of the plasma processing apparatus and a first threshold for an abnormality determination using a first algorithm with respect to the recorded emission data and a second calculation unit for calculating a second soundness index value of the plasma processing apparatus and a second threshold for the abnormality determination using a second algorithm with respect to the electrical signal data recorded in the data recording unit, and a determination unit that determines soundness of the plasma processing apparatus using the calculated first soundness index value and the first thres

Abstract: A system that predicts an apparatus state of a plasma processing apparatus including a processing chamber in which a sample is processed is configured to have a data recording unit that records emission data of plasma during processing of the sample and electrical signal data obtained from the apparatus during the plasma processing, an arithmetic unit that includes a first calculation unit for calculating a first soundness index value of the plasma processing apparatus and a first threshold for an abnormality determination using a first algorithm with respect to the recorded emission data and a second calculation unit for calculating a second soundness index value of the plasma processing apparatus and a second threshold for the abnormality determination using a second algorithm with respect to the electrical signal data recorded in the data recording unit, and a determination unit that determines soundness of the plasma processing apparatus using the calculated first soundness index value and the first thres

Abstract: A plasma processing apparatus including a state prediction apparatus that predicts an apparatus state of the plasma processing apparatus configured to include an apparatus data recording unit that records apparatus data output from the plasma processing apparatus during the processing of the sample, a physical environment measurement data recording unit that measures physical environment in the processing chamber and records apparatus physical environment data, data correction unit that extracts a temporal change component of the physical environment from a plurality of the apparatus physical environment data recorded in the physical environment measurement data recording unit and extracts the temporal change component of the physical environment from the apparatus data to remove the temporal change components, and an apparatus state prediction calculation unit that predicts the state of the plasma processing apparatus using the apparatus data from which the temporal change component of the physical environme

Abstract: A system that predicts an apparatus state of a plasma processing apparatus including a processing chamber in which a sample is processed is configured to have a data recording unit that records emission data of plasma during processing of the sample and electrical signal data obtained from the apparatus during the plasma processing, an arithmetic unit that includes a first calculation unit for calculating a first soundness index value of the plasma processing apparatus and a first threshold for an abnormality determination using a first algorithm with respect to the recorded emission data and a second calculation unit for calculating a second soundness index value of the plasma processing apparatus and a second threshold for the abnormality determination using a second algorithm with respect to the electrical signal data recorded in the data recording unit, and a determination unit that determines soundness of the plasma processing apparatus using the calculated first soundness index value and the first thres

Abstract: A plasma processing method includes forming a deposition film containing silicon as a component in a processing chamber by generating a first plasma in the processing chamber; plasma etching of a sample in which a film containing a metal is formed in the processing chamber; and removing of a metal-based reaction product by generating a second plasma including an element having reducibility and halogen. The plasma processing method further includes removing the deposition film by a third plasma generated by using gas containing a fluorine element; and removing residual gas by a fourth plasma.