Abstract: A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a first photoelectric converter that detects light in a first wavelength range and photoelectrically converts the light; a second photoelectric converter that detects light in a second wavelength range and photoelectrically converts the light to obtain distance information of a subject; and an optical filter that is disposed between the first photoelectric converter and the second photoelectric converter, and allows the light in the second wavelength range to pass therethrough more easily than the light in the first wavelength range. The first photoelectric converter includes a stacked structure and an electric charge accumulation electrode.

Abstract: A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a first photoelectric converter that detects light in a first wavelength range and photoelectrically converts the light; a second photoelectric converter that detects light in a second wavelength range and photoelectrically converts the light to obtain distance information of a subject; and an optical filter that is disposed between the first photoelectric converter and the second photoelectric converter, and allows the light in the second wavelength range to pass therethrough more easily than the light in the first wavelength range. The first photoelectric converter includes a stacked structure and an electric charge accumulation electrode.

Abstract: An error is reduced in phase difference detection of an imaging element including a phase difference pixel with an on-chip lens in common for a pair of pixels. The imaging element includes a pixel, an individual on-chip lens, a plurality of phase difference pixels, a common on-chip lens, and a pixel circuit. The individual on-chip lens individually collects incident light for each pixel. The phase difference pixels are arranged adjacent to each other to detect a phase difference. The common on-chip lens is arranged in common for the plurality of phase difference pixels and collects incident light in common. The pixel circuit is formed in a semiconductor substrate and generates an image signal on the basis of a transferred charge. Charge transfer units of the plurality of phase difference pixels are in a region between the common on-chip lens and the individual on-chip lens.

Abstract: Crosstalk of an imaging device is reduced. The imaging device includes a pixel, a pixel circuit, a light-shielding wall, a through electrode, and a protrusion. The pixel includes a first photoelectric conversion unit and a second photoelectric conversion unit. The first photoelectric conversion unit is disposed adjacent to the semiconductor substrate and performs photoelectric conversion of incident light. The second photoelectric conversion unit is disposed on the semiconductor substrate and performs photoelectric conversion of the incident light transmitted through the first photoelectric conversion unit. The pixel circuit is disposed on a surface different from a surface adjacent to the first photoelectric conversion unit of the semiconductor substrate and generates an image signal based on charges generated through photoelectric conversion of each of the first photoelectric conversion unit and the second photoelectric conversion unit.

Abstract: A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a first photoelectric converter that detects light in a first wavelength range and photoelectrically converts the light; a second photoelectric converter that detects light in a second wavelength range and photoelectrically converts the light to obtain distance information of a subject; and an optical filter that is disposed between the first photoelectric converter and the second photoelectric converter, and allows the light in the second wavelength range to pass therethrough more easily than the light in the first wavelength range. The first photoelectric converter includes a stacked structure and an electric charge accumulation electrode.

Abstract: A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a first photoelectric converter that detects light in a first wavelength range and photoelectrically converts the light; a second photoelectric converter that detects light in a second wavelength range and photoelectrically converts the light to obtain distance information of a subject; and an optical filter that is disposed between the first photoelectric converter and the second photoelectric converter, and allows the light in the second wavelength range to pass therethrough more easily than the light in the first wavelength range. The first photoelectric converter includes a stacked structure and an electric charge accumulation electrode.

Abstract: An error is reduced in phase difference detection of an imaging element including a phase difference pixel with an on-chip lens in common for a pair of pixels. The imaging element includes a pixel, an individual on-chip lens, a plurality of phase difference pixels, a common on-chip lens, and a pixel circuit. The individual on-chip lens individually collects incident light for each pixel. The phase difference pixels are arranged adjacent to each other to detect a phase difference. The common on-chip lens is arranged in common for the plurality of phase difference pixels and collects incident light in common. The pixel circuit is formed in a semiconductor substrate and generates an image signal on the basis of a transferred charge. Charge transfer units of the plurality of phase difference pixels are in a region between the common on-chip lens and the individual on-chip lens.

Abstract: A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a first photoelectric converter that detects light in a first wavelength range and photoelectrically converts the light; a second photoelectric converter that detects light in a second wavelength range and photoelectrically converts the light to obtain distance information of a subject; and an optical filter that is disposed between the first photoelectric converter and the second photoelectric converter, and allows the light in the second wavelength range to pass therethrough more easily than the light in the first wavelength range. The first photoelectric converter includes a stacked structure and an electric charge accumulation electrode.