Patents by Inventor Yoshito NISHIOKA
Yoshito NISHIOKA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9564738Abstract: A semiconductor laser device includes an n-type clad layer, a first p-type clad layer and a ridge stripe. The device also includes an active layer interposed between the n-type clad layer and the first p-type clad layer, and a current-blocking layer formed on side surfaces of the ridge stripe. The ridge stripe of the device includes a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first p-type clad layer from the n-type clad layer. The ridge stripe is formed such that a first ridge width as the width of a surface of the second p-type clad layer exists on the same side as the first p-type clad layer and a second ridge width as the width of a surface of the second p-type clad layer exists on the opposite side from the first p-type clad layer.Type: GrantFiled: November 4, 2015Date of Patent: February 7, 2017Assignee: ROHM CO., LTD.Inventors: Yoshito Nishioka, Yoichi Mugino, Tsuguki Noma
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Patent number: 9564739Abstract: A semiconductor laser device capable of high output is provided. A semiconductor laser diode includes: a substrate; and a semiconductor stacked structure, which is formed on the substrate through crystal growth. The semiconductor stacked structure includes: an n-type (Alx1Ga(1-x1))0.51In0.49P cladding layer and a p-type (Alx1Ga(1-x1))0.51In0.49P cladding layer; an n-side Alx2Ga(1-x2)As guiding layer and a p-side Alx2Ga(1-x2)As guiding layer, which are sandwiched between the cladding layers; and an active layer, which is sandwiched between the guiding layers. The active layer is formed of a quantum well layer including an AlyGa(1-y)As(1-x3)Px3 layer and a barrier layer including an Alx4Ga(1-x4)As layer that are alternatively repetitively stacked for a plurality of periods.Type: GrantFiled: February 19, 2016Date of Patent: February 7, 2017Assignee: ROHM CO., LTDInventors: Tsuguki Noma, Minoru Akutsu, Yoshito Nishioka
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Publication number: 20160211651Abstract: A semiconductor laser device capable of high output is provided. A semiconductor laser diode includes: a substrate; and a semiconductor stacked structure, which is formed on the substrate through crystal growth. The semiconductor stacked structure includes: an n-type (Alx1Ga(1-x1))0.51In0.49P cladding layer and a p-type (Alx1Ga(1-x1))0.51In0.49P cladding layer; an n-side Alx2Ga(1-x2)As guiding layer and a p-side Alx2Ga(1-x2)As guiding layer, which are sandwiched between the cladding layers; and an active layer, which is sandwiched between the guiding layers. The active layer is formed of a quantum well layer including an AlyGa(1-y)As(1-x3)Px3 layer and a barrier layer including an Alx4Ga(1-x4)As layer that are alternatively repetitively stacked for a plurality of periods.Type: ApplicationFiled: February 19, 2016Publication date: July 21, 2016Applicant: ROHM CO., LTD.Inventors: Tsuguki NOMA, Minoru AKUTSU, Yoshito NISHIOKA
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Patent number: 9356432Abstract: A semiconductor laser device capable of high output is provided. A semiconductor laser diode includes: a substrate; and a semiconductor stacked structure, which is formed on the substrate through crystal growth. The semiconductor stacked structure includes: an n-type (Alx1Ga1-x1))0.51In0.49P cladding layer and a p-type (Alx1Ga(1-x1))0.51In0.49P cladding layer; an n-side Alx2Ga(1-x2)As guiding layer and a p-side Alx2Ga(1-x2)As guiding layer, which are sandwiched between the cladding layers; and an active layer, which is sandwiched between the guiding layers. The active layer is formed of a quantum well layer including an AlyGa(1-y)As(1-x3)Px3 layer and a barrier layer including an Alx4Ga(1-x4)As layer that are alternatively repetitively stacked for a plurality of periods.Type: GrantFiled: February 21, 2014Date of Patent: May 31, 2016Assignee: ROHM CO., LTD.Inventors: Tsuguki Noma, Minoru Akutsu, Yoshito Nishioka
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Publication number: 20160064902Abstract: A semiconductor laser device includes an n-type clad layer, a first p-type clad layer and a ridge stripe. The device also includes an active layer interposed between the n-type clad layer and the first p-type clad layer, and a current-blocking layer formed on side surfaces of the ridge stripe. The ridge stripe of the device includes a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first p-type clad layer from the n-type clad layer. The ridge stripe is formed such that a first ridge width as the width of a surface of the second p-type clad layer exists on the same side as the first p-type clad layer and a second ridge width as the width of a surface of the second p-type clad layer exists on the opposite side from the first p-type clad layer.Type: ApplicationFiled: November 4, 2015Publication date: March 3, 2016Applicant: ROHM CO., LTD.Inventors: Yoshito NISHIOKA, Yoichi MUGINO, Tsuguki NOMA
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Patent number: 9197035Abstract: A semiconductor laser device includes an n-type clad layer, a first p-type clad layer and a ridge stripe. The device also includes an active layer interposed between the n-type clad layer and the first p-type clad layer, and a current-blocking layer formed on side surfaces of the ridge stripe. The ridge stripe of the device includes a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first p-type clad layer from the n-type clad layer. The ridge stripe is formed such that a first ridge width as the width of a surface of the second p-type clad layer exists on the same side as the first p-type clad layer and a second ridge width as the width of a surface of the second p-type clad layer exists on the opposite side from the first p-type clad layer.Type: GrantFiled: December 3, 2014Date of Patent: November 24, 2015Assignee: ROHM CO., LTD.Inventors: Yoshito Nishioka, Yoichi Mugino, Tsuguki Noma
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Publication number: 20150085890Abstract: A semiconductor laser device includes an n-type clad layer, a first p-type clad layer and a ridge stripe. The device also includes an active layer interposed between the n-type clad layer and the first p-type clad layer, and a current-blocking layer formed on side surfaces of the ridge stripe. The ridge stripe of the device includes a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first p-type clad layer from the n-type clad layer. The ridge stripe is formed such that a first ridge width as the width of a surface of the second p-type clad layer exists on the same side as the first p-type clad layer and a second ridge width as the width of a surface of the second p-type clad layer exists on the opposite side from the first p-type clad layer.Type: ApplicationFiled: December 3, 2014Publication date: March 26, 2015Applicant: ROHM CO., LTD.Inventors: Yoshito NISHIOKA, Yoichi MUGINO, Tsuguki NOMA
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Patent number: 8957692Abstract: Provided is a method for performing a burn-in test on an object under test in which a plurality of electrodes are provided in positions at different heights. The method comprising steps of: preparing an object under test in which an electrode in a higher position have a higher surface roughness among the plurality of electrodes; bringing a plurality of sheet-type probes into contact with the plurality of electrodes, respectively; and supplying an electric current with the plurality of electrodes through the plurality of sheet-type probes. By implementing the method, the sheet-type probes can be kept in stable contact with the electrodes because electrodes in a higher position have a higher surface roughness Ra than electrodes in a lower position. Consequently, stable and reliable burn-in test can be performed.Type: GrantFiled: December 2, 2010Date of Patent: February 17, 2015Assignees: TDK Corporation, Rohm Co., Ltd.Inventors: Koji Shimazawa, Masaaki Kaneko, Takashi Honda, Yoichi Mugino, Yoshito Nishioka, Tsuguki Noma
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Patent number: 8923355Abstract: A semiconductor laser device includes an n-type clad layer, a first p-type clad layer and a ridge stripe. The device also includes an active layer interposed between the n-type clad layer and the first p-type clad layer, and a current-blocking layer formed on side surfaces of the ridge stripe. The ridge stripe of the device includes a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first p-type clad layer from the n-type clad layer. The ridge stripe is formed such that a first ridge width as the width of a surface of the second p-type clad layer exists on the same side as the first p-type clad layer and a second ridge width as the width of a surface of the second p-type clad layer exists on the opposite side from the first p-type clad layer.Type: GrantFiled: December 16, 2013Date of Patent: December 30, 2014Assignee: Rohm Co., Ltd.Inventors: Yoshito Nishioka, Yoichi Mugino, Tsuguki Noma
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Publication number: 20140169396Abstract: A semiconductor laser device capable of high output is provided. A semiconductor laser diode includes: a substrate; and a semiconductor stacked structure, which is formed on the substrate through crystal growth. The semiconductor stacked structure includes: an n-type (Alx1Ga1-x1))0.51In0.49P cladding layer and a p-type (Alx1Ga(1-x1))0.51In0.49P cladding layer; an n-side Alx2Ga(1-x2)As guiding layer and a p-side Alx2Ga(1-x2)As guiding layer, which are sandwiched between the cladding layers; and an active layer, which is sandwiched between the guiding layers. The active layer is formed of a quantum to well layer including an AlyGa(1-y)As(1-x3)Px3 layer and a barrier layer including an Alx4Ga(1-x4)As layer that are alternatively repetitively stacked for a plurality of periods.Type: ApplicationFiled: February 21, 2014Publication date: June 19, 2014Applicant: ROHM CO., LTD.Inventors: Tsuguki NOMA, Minoru Akutsu, Yoshito Nishioka
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Publication number: 20140105236Abstract: A semiconductor laser device includes an n-type clad layer, a first p-type clad layer and a ridge stripe. The device also includes an active layer interposed between the n-type clad layer and the first p-type clad layer, and a current-blocking layer formed on side surfaces of the ridge stripe. The ridge stripe of the device includes a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first p-type clad layer from the n-type clad layer. The ridge stripe is formed such that a first ridge width as the width of a surface of the second p-type clad layer exists on the same side as the first p-type clad layer and a second ridge width as the width of a surface of the second p-type clad layer exists on the opposite side from the first p-type clad layer.Type: ApplicationFiled: December 16, 2013Publication date: April 17, 2014Applicant: ROHM CO., LTD.Inventors: Yoshito NISHIOKA, Yoichi MUGINO, Tsuguki NOMA
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Patent number: 8699536Abstract: A semiconductor laser device capable of high output is provided. A semiconductor laser diode includes: a substrate; and a semiconductor stacked structure, which is formed on the substrate through crystal growth. The semiconductor stacked structure includes: an n-type (Alx1Ga(1-x1))0.51In0.49P cladding layer and a p-type (Alx1Ga(1-x1))0.51In0.49P cladding layer; an n-side Alx2Ga(1-x2)As guiding layer and a p-side Alx2Ga(1-x2)As guiding layer, which are sandwiched between the cladding layers; and an active layer, which is sandwiched between the guiding layers. The active layer is formed of a quantum well layer including an AlyGa(1-y)As(1-x3)Px3 layer and a barrier layer including an Alx4Ga(1-x4)As layer that are alternatively repetitively stacked for a plurality of periods.Type: GrantFiled: December 12, 2011Date of Patent: April 15, 2014Assignee: Rohm Co., Ltd.Inventors: Tsuguki Noma, Minoru Akutsu, Yoshito Nishioka
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Patent number: 8611386Abstract: A semiconductor laser device includes an n-type clad layer, a first p-type clad layer and a ridge stripe. The device also includes an active layer interposed between the n-type clad layer and the first p-type clad layer, and a current-blocking layer formed on side surfaces of the ridge stripe. The ridge stripe of the device includes a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first p-type clad layer from the n-type clad layer. The ridge stripe is formed such that a first ridge width as the width of a surface of the second p-type clad layer exists on the same side as the first p-type clad layer and a second ridge width as the width of a surface of the second p-type clad layer exists on the opposite side from the first p-type clad layer.Type: GrantFiled: January 26, 2012Date of Patent: December 17, 2013Assignee: Rohm Co., Ltd.Inventors: Yoshito Nishioka, Yoichi Mugino, Tsuguki Noma
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Patent number: 8446927Abstract: A semiconductor laser device includes a p-type clad layer and an n-type clad layer, a p-side guide layer and an n-side guide layer interposed between the p-type clad layer and the n-type clad layer, and an active layer interposed between the p-side guide layer and the n-side guide layer. The active layer includes at least two quantum well layers and a barrier layer interposed between the quantum well layers adjoining to each other. Each of the p-type clad layer and the n-type clad layer is formed of a (Alx1Ga(1-x1))0.51In0.49P layer (0?x1?1). Each of the p-side guide layer, the n-side guide layer and the barrier layer is formed of a Alx2Ga(1-x2)As layer (0?x2?1). Each of the quantum well layers is formed of a GaAs(1-x3)Px3 layer (0?x3?1). The (Alx1Ga(1-x1))0.51In0.49P layer has a composition satisfying an inequality, x1>0.7. The Alx2Ga(1-x2)As layer has a composition satisfying an inequality, 0.4?x2?0.8.Type: GrantFiled: January 26, 2012Date of Patent: May 21, 2013Assignee: Rohm Co., Ltd.Inventors: Yoshito Nishioka, Yoichi Mugino, Tsuguki Noma
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Publication number: 20120307856Abstract: A semiconductor laser device includes a p-type clad layer and an n-type clad layer, a p-side guide layer and an n-side guide layer interposed between the p-type clad layer and the n-type clad layer, and an active layer interposed between the p-side guide layer and the n-side guide layer. The active layer includes at least two quantum well layers and a barrier layer interposed between the quantum well layers adjoining to each other. Each of the p-type clad layer and the n-type clad layer is formed of a (Alx1Ga(1-x1))0.51In0.49P layer (0?x1?1). Each of the p-side guide layer, the n-side guide layer and the barrier layer is formed of a Alx2Ga(1-x2)As layer (0?x2?1). Each of the quantum well layers is formed of a GaAs(1-x3)Px3 layer (0?x3?1). The (Alx1Ga(1-x1))0.51In0.49P layer has a composition satisfying an inequality, x1>0.7. The Alx2Ga(1-x2)As layer has a composition satisfying an inequality, 0.4?x2?0.8.Type: ApplicationFiled: July 27, 2012Publication date: December 6, 2012Applicant: ROHM CO., LTD.Inventors: Yoshito NISHIOKA, Yoichi Mugino, Tsuguki Noma
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Publication number: 20120195338Abstract: A semiconductor laser device includes a p-type clad layer and an n-type clad layer, a p-side guide layer and an n-side guide layer interposed between the p-type clad layer and the n-type clad layer, and an active layer interposed between the p-side guide layer and the n-side guide layer. The active layer includes at least two quantum well layers and a barrier layer interposed between the quantum well layers adjoining to each other. Each of the p-type clad layer and the n-type clad layer is formed of a (Alx1Ga(1-x1))0.51In0.49P layer (0?x1?1). Each of the p-side guide layer, the n-side guide layer and the barrier layer is formed of a Alx2Ga(1-x2)As layer (0?x2?1). Each of the quantum well layers is formed of a GaAs(1-x3)Px3 layer (0?x3?1). The (Alx1Ga(1-x1))0.51In0.49P layer has a composition satisfying an inequality, x1>0.7. The Alx2Ga(1-x2)As layer has a composition satisfying an inequality, 0.4?x2?0.8.Type: ApplicationFiled: January 26, 2012Publication date: August 2, 2012Applicant: ROHM CO., LTD.Inventors: Yoshito NISHIOKA, Yoichi MUGINO, Tsuguki NOMA
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Publication number: 20120195339Abstract: A semiconductor laser device includes an n-type clad layer, a first p-type clad layer and a ridge stripe. The device also includes an active layer interposed between the n-type clad layer and the first p-type clad layer, and a current-blocking layer formed on side surfaces of the ridge stripe. The ridge stripe of the device includes a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first p-type clad layer from the n-type clad layer. The ridge stripe is formed such that a first ridge width as the width of a surface of the second p-type clad layer exists on the same side as the first p-type clad layer and a second ridge width as the width of a surface of the second p-type clad layer exists on the opposite side from the first p-type clad layer.Type: ApplicationFiled: January 26, 2012Publication date: August 2, 2012Applicant: ROHM CO., LTD.Inventors: Yoshito NISHIOKA, Yoichi MUGINO, Tsuguki NOMA
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Publication number: 20120147916Abstract: A semiconductor laser device capable of high output is provided. A semiconductor laser diode includes: a substrate; and a semiconductor stacked structure, which is formed on the substrate through crystal growth. The semiconductor stacked structure includes: an n-type (Alx1Ga(1-x1))0.51In0.49P cladding layer 14 and a p-type (Alx1Ga(1-x1))0.51In0.49P cladding layer; an n-side Alx2Ga(1-x2)As guiding layer and a p-side Alx2Ga(1-x2)As guiding layer, which are sandwiched between the cladding layers; and an active layer, which is sandwiched between the guiding layers. The active layer is formed of a quantum well layer including an AlyGa(1-y)As(1-x3)Px3 layer and a barrier layer including an Alx4Ga(1-x4)As layer that are alternatively repetitively stacked for a plurality of periods.Type: ApplicationFiled: December 12, 2011Publication date: June 14, 2012Applicant: ROHM CO., LTD.Inventors: Tsuguki Noma, Minoru Akutsu, Yoshito Nishioka
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Publication number: 20120139566Abstract: Provided is a method for performing a burn-in test on an object under test in which a plurality of electrodes are provided in positions at different heights. The method comprising steps of: preparing an object under test in which an electrode in a higher position have a higher surface roughness among the plurality of electrodes; bringing a plurality of sheet-type probes into contact with the plurality of electrodes, respectively; and supplying an electric current with the plurality of electrodes through the plurality of sheet-type probes. By implementing the method, the sheet-type probes can be kept in stable contact with the electrodes because electrodes in a higher position have a higher surface roughness Ra than electrodes in a lower position. Consequently, stable and reliable burn-in test can be performed.Type: ApplicationFiled: December 2, 2010Publication date: June 7, 2012Applicants: ROHM CO., LTD., TDK CORPORATIONInventors: Koji SHIMAZAWA, Masaaki KANEKO, Takashi HONDA, Yoichi MUGINO, Yoshito NISHIOKA, Tsuguki NOMA