Patents by Inventor Yoshitomo Fukuda

Yoshitomo Fukuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method Of Manufacturing Dislocation-Free Single-Crystal Silicon By Czochralski Method
    Publication number: 20110192342
    Abstract: Dislocation-free single-crystal silicon is manufactured by the Czochralski method, wherein silicon which does not contain particles with an average particle diameter smaller than 250 ?m, is used as raw material for melting.
    Type: Application
    Filed: January 31, 2011
    Publication date: August 11, 2011
    Applicant: SILTRONIC AG
    Inventors: Masayuki Fukuda, Jun Fukuda, Yoshitomo Fukuda