Abstract: Provided is a technique for molding a functional material without deteriorating the function of the functional material. A method for producing a functional material molded article of the present disclosure includes: dispersing a functional material in a water-alcohol mixed solution to obtain a liquid dispersion; impregnating a porous molding base material with the liquid dispersion to obtain an impregnated product; and drying the impregnated product.

Abstract: After an Si wafer is anisotropically etched through an etching mask having an opening in an anisotropically etching solution, an etching face of the Si wafer emerged by the anisotropic etching is subjected to anodic oxidation by applying a positive voltage for anodic oxidation on the Si wafer. As a result, the etching face of the Si wafer is isotropically etched due to the anodic oxidation in the anisotropic etching solution. By the isotropic etching thus performed, a sharp corner formed at an end portion of a recess portion formed in the Si wafer by the anisotropic etching, is rounded. Because the isotropic etching reaction progresses very slowly in comparison with the anisotropic etching, control of the etching can be made easy and accurately. As a result, the thickness of the diaphragm can be prevented from being dispersed.

Abstract: An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part.

Abstract: A silicon substance is etched by using alkaline etchant containing additive (Cu, Pb, Mg). The content of the additive is controlled intentionally to provide desired etching quality during an etching operation.

Abstract: An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part.

Abstract: A communication method applied to a communication system is provided for enhancing communication performance such as a throughput and a turn around time in the so-called intra-computer communication. In the communication procedure, when a source end system (SES) like a host computer transfers data to a destination end system (DES) such as a LAN or a WAN through a communication control system (CCS), the CCS served as a virtual destination receives the data and transmits an acknowledge (+Cresp) to the SES. In response to the acknowledge (+Crest), the SES performs the next transfer of the data. In response to the last acknowledge, the SES operates to output an indication about completion of the data transmission (End TX-C). The CCS continues to transfer the data temporarily received from the SES to the DES unless the CCS receives the acknowledge from the DES. The acknowledge +Cresp contains information about an amount of data transferred from the CCS to the DES.

Abstract: In a fine processing method for forming a silicon substrate, first, an oxynitride layer is formed on the silicon substrate. Thereafter, a silicon nitride layer is formed on the oxynitride layer and patterned into a predetermined shape to cause it to function as an etching mask. The silicon substrate is etched through the etching mask. In this case, because of the oxynitride layer formed between the silicon substrate and the silicon nitride layer, an interface between the silicon substrate and the silicon nitride layer is not easily eroded in the etching process. As a result, processing accuracy of the substrate is improved.