Patents by Inventor Yoshitsugu Ohizumi

Yoshitsugu Ohizumi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

Method of manufacturing semiconductor laser, semiconductor laser, optical pickup, optical disk device, method of manufacturing semiconductor device, semiconductor device, and method of growing nitride type Group III-V compound semiconductor layer

Patent number: 8822975

Abstract: A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga, the method includes the steps of: forming a mask including an insulating film over the substrate, at least in the vicinity of the position of forming the end face window structure; and growing the nitride type Group III-V compound semiconductor layer including the active layer over a part, not covered with the mask, of the substrate.

Type: Grant

Filed: April 20, 2012

Date of Patent: September 2, 2014

Assignee: Sony Corporation

Inventors: Masaru Kuramoto, Eiji Nakayama, Yoshitsugu Ohizumi
Method of manufacturing semiconductor laser, semiconductor laser, optical pickup, optical disk device, method of manufacturing semiconductor device, semiconductor device, and method of growing nitride type group III-V compound semiconductor layer

Patent number: 8530255

Abstract: A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga. The method includes the steps of forming a mask including an insulating film over the substrate, at least in the vicinity of the position of forming the end face window structure; and growing the nitride type Group III-V compound semiconductor layer including the active layer over a part, not covered with the mask, of the substrate.

Type: Grant

Filed: July 28, 2008

Date of Patent: September 10, 2013

Assignee: Sony Corporation

Inventors: Masaru Kuramoto, Eiji Nakayama, Yoshitsugu Ohizumi, Tsuyoshi Fujimoto
METHOD OF MANUFACTURING SEMICONDUCTOR LASER, SEMICONDUCTOR LASER, OPTICAL PICKUP, OPTICAL DISK DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF GROWING NITRIDE TYPE GROUP III-V COMPOUND SEMICONDUCTOR LAYER

Publication number: 20120207185

Abstract: A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga, the method includes the steps of: forming a mask including an insulating film over the substrate, at least in the vicinity of the position of forming the end face window structure; and growing the nitride type Group III-V compound semiconductor layer including the active layer over a part, not covered with the mask, of the substrate.

Type: Application

Filed: April 20, 2012

Publication date: August 16, 2012

Applicant: SONY CORPORATION

Inventors: Masaru Kuramoto, Eiji Nakayama, Yoshitsugu Ohizumi
Method of manufacturing semiconductor device, semiconductor laser, optical pickup, and optical disk device with nitride type group III-V compound semiconductor layer

Patent number: 8202750

Abstract: A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga, the method includes the steps of: forming a mask including an insulating film over the substrate, at least in the vicinity of the position of forming the end face window structure; and growing the nitride type Group III-V compound semiconductor layer including the active layer over a part, not covered with the mask, of the substrate.

Type: Grant

Filed: February 27, 2008

Date of Patent: June 19, 2012

Assignee: Sony Corporation

Inventors: Masaru Kuramoto, Eiji Nakayama, Yoshitsugu Ohizumi
METHOD OF MANUFACTURING SEMICONDUCTOR LASER, SEMICONDUCTOR LASER, OPTICAL PICKUP, OPTICAL DISK DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF GROWING NITRIDE TYPE GROUP III-V COMPOUND SEMICONDUCTOR LAYER

Publication number: 20090034567

Abstract: A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga. The method includes the steps of forming a mask including an insulating film over the substrate, at least in the vicinity of the position of forming the end face window structure; and growing the nitride type Group III-V compound semiconductor layer including the active layer over a part, not covered with the mask, of the substrate.

Type: Application

Filed: July 28, 2008

Publication date: February 5, 2009

Applicant: SONY CORPORATION

Inventors: Masaru Kuramoto, Eiji Nakayama, Yoshitsugu Ohizumi, Tsuyoshi Fujimoto

Method of manufacturing semiconductor laser, semiconductor laser, optical pickup, optical disk device, method of manufacturing semiconductor device, semiconductor device, and method of growing nitride type Group III-V compound semiconductor layer

Method of manufacturing semiconductor laser, semiconductor laser, optical pickup, optical disk device, method of manufacturing semiconductor device, semiconductor device, and method of growing nitride type group III-V compound semiconductor layer

METHOD OF MANUFACTURING SEMICONDUCTOR LASER, SEMICONDUCTOR LASER, OPTICAL PICKUP, OPTICAL DISK DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF GROWING NITRIDE TYPE GROUP III-V COMPOUND SEMICONDUCTOR LAYER

Method of manufacturing semiconductor device, semiconductor laser, optical pickup, and optical disk device with nitride type group III-V compound semiconductor layer

METHOD OF MANUFACTURING SEMICONDUCTOR LASER, SEMICONDUCTOR LASER, OPTICAL PICKUP, OPTICAL DISK DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF GROWING NITRIDE TYPE GROUP III-V COMPOUND SEMICONDUCTOR LAYER