Abstract: A semiconductor device includes: a semiconductor chip; a first metal plate disposed on one side of the chip through a first solder layer; a second metal plate disposed on the other side of the chip through a second solder layer; a third metal plate disposed on the second metal plate through a third solder layer; supporting means for holding at least one of distances between the chip and the first metal plate and between the chip and the second metal plate; and excess solder accommodation means for accommodating excess solder in a case where the third solder layer includes the excess solder.

Abstract: A mold type semiconductor device includes a semiconductor chip including a semiconductor part; a metallic layer; a solder layer; and a metallic member connecting to the semiconductor chip through the metallic layer and the solder layer. The solder layer is made of solder having yield stress smaller than that of the metallic layer. Even when the semiconductor chip is sealed with a resin mold, the metallic layer is prevented from cracking.

Abstract: A semiconductor device includes: first and second metallic plates, each of which includes a heat radiation surface and an inner surface; a semiconductor element between the metallic plates; a block between the second metallic plate and the semiconductor element; a solder member between the second metallic plate and the block; and a resin mold. The heat radiation surface is exposed from the resin mold. The second metallic plate includes a groove for preventing the solder member from expanding outside of the block. The groove is disposed on the inner surface and disposed on an outer periphery of the block. The second metallic plate further includes an inner surface member on an inner surface of the groove. The inner surface member has a solder wettability, which is larger than a solder wettability of the block.

Abstract: A method for manufacturing a semiconductor device having a solder layer includes the steps of: grinding a mounting surface of a semiconductor chip; etching the mounting surface of the chip; forming an electrode on the mounting surface of the chip; assembling the chip, the solder layer and a base in this order; and heating the chip, the solder layer and the base to be equal to or higher than a solidus temperature of the solder layer so that the solder layer is reflowed for soldering the chip on the base.

Abstract: A semiconductor device includes: a semiconductor chip; a first metal plate disposed on one side of the chip through a first solder layer; a second metal plate disposed on the other side of the chip through a second solder layer; a third metal plate disposed on the second metal plate through a third solder layer; supporting means for holding at least one of distances between the chip and the first metal plate and between the chip and the second metal plate; and excess solder accommodation means for accommodating excess solder in a case where the third solder layer includes the excess solder.

Abstract: A mold type semiconductor device includes a semiconductor chip including a semiconductor part; a metallic layer; a solder layer; and a metallic member connecting to the semiconductor chip through the metallic layer and the solder layer. The solder layer is made of solder having yield stress smaller than that of the metallic layer. Even when the semiconductor chip is sealed with a resin mold, the metallic layer is prevented from cracking.

Abstract: A processing system for charge request data issued from a charge requesting organization performs collective processing of the request data without generating payment slips. This system includes filter means for extracting a contractor number of a charge paying organization from a contractor code of the requesting organization included in the request data, the contractor code of the requesting organization includes the contractor number of the paying organization and other management data formatted within the contractor number of the paying organization, the other management data include a charge request amount for each day of payment and for each account of the paying organization. This system also includes request data processing means for preparing request data for each day of payment including the contractor number of the paying organization and the charge request amount for each account of the paying organization, each type of charge, each requesting organization and each contractor.

Abstract: A method of production of an inexpensive corrosion-resistant heat exchanger made of stainless steel including the steps of electroplating chrome to a thickness of 15 &mgr;m on at least one of the end faces of a plurality of first and second shaped plates made of stainless steel alternately stacked in the thickness direction so as to form a chrome-based brazing filler metal layer, then electrolessly plating or electroplating Ni-P to a thickness of 35 &mgr;m on the chrome-based brazing filler metal layer to form a nickel-based brazing filler metal layer. The first and second shaped plates are brazed together through the chrome-based brazing filler metal layer and the nickel-based brazing filler metal layer to obtain a high corrosion resistant heat exchanger. Due to this, a high corrosion resistance brazing filler metal containing an Ni-Cr28-P8-etc. alloy composition is obtained at the two end faces of the first and second shaped plates.

Abstract: A commutator is composed of a contact unit, a base member made of insulation material and a terminal unit. The contact unit has a flat brush-contact surface and a connection surface opposite the brush contact surface. The contact unit also has a plurality of commutator segments. The terminal unit has a plurality of conductive terminal members. The base member supports the commutator segments. The commutator also has an electrical connection structure having a set of a convex member and a concave member and a plurality of connection members disposed between the convex member and the concave member to connect the plurality of the commutator segments and terminal members respectively.

Abstract: The processing system for charge request data of the present invention comprises data input means for inputting charge request data, including charge transfer day, requesting organization, paying organization and an amount of transfer, a master file where information relating to requesting organizations and paying organizations are registered, charge transfer processing means for preparing a charge transfer detailed file including individual charge request data where said charge request data are classified to each requesting organization based on said master file and summary data summarizing number of transfers and amount of transfer for each type of the requesting organization, and for preparing a transfer slip containing charge transfer information of each requesting organization for each paying organization from said charge transfer detailed file, initial cost data containing information necessary for processing for financial accounting, and overall charge transfer data on the day of transfer, and input/ou

Abstract: A metallic layer is provided on the surface of a ceramic body. A junction layer is provided on the metallic layer. The junction layer contains 40.about.98 wt % Cu and 2.about.20 wt % Ni. A conductive member is bonded to the metallic layer via the junction layer.

Abstract: A metallic layer is provided on the surface of a ceramic body. A junction layer is provided on the metallic layer. The junction layer contains 40.about.98 wt % Cu and 2.about.20 wt % Ni. A conductive member is bonded to the metallic layer via the junction layer.

Abstract: An electrode comprises an active substance therefor which is made of a shaped body of a carbon porous body and a low crystallinity or amorphous carbon layer formed on at least a part of surfaces of the carbon porous body. The carbon porous body further comprises crystalline carbon particles which are dispersed and held in the carbon porous body. A method for making the electrode and a nonaqueous electrolyte secondary cell comprising the electrode as a negative electrode are also described.

Abstract: A semiconductor device, including a nickel layer formed on a semiconductor substrate and a solder layer formed on the nickel layer, and a method of manufacturing such a device are disclosed. The percent ratio of an X-ray diffraction peak intensity of the (200) plane of the nickel layer to that of the (111) plane of the nickel layer is not less than 10%. The nickel layer is sputtered in a condition which a pressure of an argon discharge gas is at least 15 mTorr. The solder layer includes at least tin and lead, and the amount of tin is not more than 30% by weight. The adhesive strength of the resultant semiconductor device is strong.

Abstract: An outer wall structure of a torque converter or the like including an input housing (1) having an end portion (2), and a pump impeller shell 4 having an end portion (5) fixed to the end portion of the input housing (1). one (5) of the end portions (2, 5) is provided at the outer peripheral surface with a surface portion (15) of a relatively small diameter and a surface portion (16) of a relatively large diameter. A space (27) for accumulating spatter therein is formed between an inner peripheral surface (20) of the other end portion (2) and the surface portion (15) of the relative small diameter.