Abstract: To achieve the object of making it easier to collectively grasp the state of the production line, an information processing method includes a first screen displaying step and a second screen displaying step. A first screen displaying step displays a first screen including a plurality of widgets. Each of the widgets is configured based on information outputted from application software which is associated with each of the widgets among a plurality of pieces of application software that manage a state of a production line. A second screen displaying step, when an operation performed on any widget of the plurality of widgets has been accepted, displays a second screen of application software which is associated with the widget.

Abstract: A screen image generation device for generating a screen image indicating a state of a facility in a production plant is provided which ensures a real-time property of a management screen image needed in actual production plants and reduce required levels of making a network faster in speed and wider in bandwidth. A server functioning as the device performs first acquisition of regularly acquiring first data transmitted from a sensor and concerning the facility at intervals of a first time, second acquisition of regularly acquiring second data transmitted from a controller and concerning the facility at intervals of a second time shorter than the first time, third acquisition of acquiring, in real time, an alert irregularly transmitted from the controller and concerning the facility, and generation of generating the management screen image indicating the state of the facility in accordance with the first data, the second data, and the alert.

Abstract: To achieve the object of making it easier to collectively grasp the state of the production line, an information processing method includes a first screen displaying step and a second screen displaying step. A first screen displaying step displays a first screen including a plurality of widgets. Each of the widgets is configured based on information outputted from application software which is associated with each of the widgets among a plurality of pieces of application software that manage a state of a production line. A second screen displaying step, when an operation performed on any widget of the plurality of widgets has been accepted, displays a second screen of application software which is associated with the widget.

Abstract: A select transistor for use in a memory device including a plurality of memory transistors connected in series includes a tunnel insulating layer formed on a semiconductor substrate, a charge storage layer formed on the tunnel insulating layer, a blocking insulating layer formed on the charge storage layer and configured to be irradiated with a gas cluster ion beam containing argon as source gas, a gate electrode formed on the blocking insulating layer, and a source/drain region formed within the semiconductor substrate at both sides of the gate electrode.

Abstract: A disclosed fabrication method of a semiconductor device includes steps of depositing a dielectric film on a semiconductor substrate; thermally treating the dielectric film; and irradiating an ionized gas cluster onto the thermally treated dielectric film.

Abstract: A disclosed temperature sensor includes a charge trap structure including a silicon oxide film formed on a substrate; an aluminum oxide film that is formed on the silicon oxide film, wherein oxygen is injected into the aluminum oxide film from an upper surface thereof; and an electrode formed on the aluminum oxide film, wherein a flat band voltage of the charge trap structure is temperature dependent.

Abstract: A disclosed fabrication method of a semiconductor device includes steps of depositing a dielectric film on a semiconductor substrate; thermally treating the dielectric film; and irradiating an ionized gas cluster onto the thermally treated dielectric film.

Abstract: A select transistor for use in a memory device including a plurality of memory transistors connected in series includes a tunnel insulating layer formed on a semiconductor substrate, a charge storage layer formed on the tunnel insulating layer, a blocking insulating layer formed on the charge storage layer and configured to be irradiated with a gas cluster ion beam containing argon as source gas, a gate electrode formed on the blocking insulating layer, and a source/drain region formed within the semiconductor substrate at both sides of the gate electrode.

Abstract: A disclosed temperature sensor includes a charge trap structure including a silicon oxide film formed on a substrate; an aluminum oxide film that is formed on the silicon oxide film, wherein oxygen is injected into the aluminum oxide film from an upper surface thereof; and an electrode formed on the aluminum oxide film, wherein a flat band voltage of the charge trap structure is temperature dependent.

Abstract: A method for manufacturing a fin-type field effect transistor simply and securely by using a SOI (Silicon On Insulator) wafer, capable of suppressing an undercut formation, is disclosed. The method includes forming a fin-shaped protrusion by selectively dry-etching a single crystalline silicon layer until an underlying buried oxide layer is exposed; forming a sacrificial oxide film by oxidizing a surface of the protrusion including a damage inflicted thereon; and forming a fin having a clean surface by removing the sacrificial oxide film by etching, wherein an etching rate r1 of the sacrificial oxide film is higher than an etching rate r2 of the buried oxide layer during the etching.

Abstract: A method for manufacturing a fin-type field effect transistor simply and securely by using a SOI (Silicon On Insulator) wafer, capable of suppressing an undercut formation, is disclosed. The method includes forming a fin-shaped protrusion by selectively dry-etching a single crystalline silicon layer until an underlying buried oxide layer is exposed; forming a sacrificial oxide film by oxidizing a surface of the protrusion including a damage inflicted thereon; and forming a fin having a clean surface by removing the sacrificial oxide film by etching, wherein an etching rate r1 of the sacrificial oxide film is higher than an etching rate r2 of the buried oxide layer during the etching.

Abstract: Liquid treatment units are disposed in multi-tiers surrounding a main-arm 35. Among liquid treatment units, plating units M1 through M4 are disposed on a lower tier side, and a unit for post-treatment process such as a cleaning unit 70 where a cleaner atmosphere is necessary is disposed on an upper tier side. Thereby, an improvement in an area efficiency and the formation and maintenance of a clean atmosphere can be simultaneously obtained.

Abstract: A plasma etching apparatus includes a process container formed of a container main body and an upper casing combined with each other. A detaching device is provided to move the upper casing between a mounted position where the upper casing is put on the container main body, and a retreated position where the upper casing is removed from the container main body. The detaching device supports the upper casing to be rotatable, movable up and down, and movable in a lateral direction, relative to the container main body. The retreated position is arranged such that the upper casing does not interfere with the container main body when the upper casing is rotated there.

Abstract: Liquid treatment units are disposed in multi-tiers surrounding a main-arm 35. Among liquid treatment units, plating units M1 through M4 are disposed on a lower tier side, and a unit for post-treatment process such as a cleaning unit 70 where a cleaner atmosphere is necessary is disposed on an upper tier side. Thereby, an improvement in an area efficiency and the formation and maintenance of a clean atmosphere can be simultaneously obtained.

Abstract: A plasma etching apparatus includes a process container formed of a container main body and an upper casing combined with each other. A detaching device is provided to move the upper casing between a mounted position where the upper casing is put on the container main body, and a retreated position where the upper casing is removed from the container main body. The detaching device supports the upper casing to be rotatable, movable up and down, and movable in a lateral direction, relative to the container main body. The retreated position is arranged such that the upper casing does not interfere with the container main body when the upper casing is rotated there.

Abstract: A semi-automatic paper insertion apparatus for a printer, a typewriter, etc. comprising a first condition in which the paper bail is out of engagement with the platen and the paper feed drive source is actuated and a second condition in which the paper bail is in engagement with the platen and the paper feed drive source is actuated, comprises further a third condition in which the paper bail is out of engagement with the platen and the paper feed drive source is deactuated, whereby a skew correcting operation can be performed without any trouble.