Patents by Inventor Yoshiya Kutsuzawa

Yoshiya Kutsuzawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6036971
    Abstract: A coated granular pesticide comprising a granular pesticide for use on plants which comprises at least one hardly water-soluble active ingredient and at least one water-swelling substance, and a thermoplastic resin-based film which covers the surface of the granular pesticide; a method for producing the same; and applications thereof. A surfactant, inorganic powder insoluble or hardly soluble in water, water-absorbing and/or water-soluble polymer fine powder, a thermosetting resin, or a biodegradable polymer insoluble or hardly soluble in water, or a combination thereof may be incorporated into the film.
    Type: Grant
    Filed: January 28, 1998
    Date of Patent: March 14, 2000
    Assignee: Chisso Corporation
    Inventors: Narutoshi Kimoto, Yoshiya Kutsuzawa, Michiyuki Ashihara
  • Patent number: 4970283
    Abstract: The present invention intends to provide a cured material of a silicon-containing polyimide having high heat resistance, low coefficient of thermal expansion, no brittleness and high hardness.In order to enable liquid coating and impregnation, a silicon-containing soluble polyimide precursor is first prepared. The precursor may be prepared by mixing five compounds of ##STR1## (R.sup.1 is a tetravalent carbon cyclic aromatic group), NH.sub.2 --R.sup.2 --NH.sub.2 (R.sup.2 is an aliphatic group, an alicyclic group, an aromatic aliphatic group or a carbon cyclic aromatic group, a polysiloxane group or 1,3,5-triazine group having a substituent), NH.sub.2 --R.sup.3 --SiR.sup.4.sub.3-k X.sup.1.sub.k and NH.sub.2 --R.sup.3 --SiR.sub.3-m.sup.4 X.sup.1.sub.m (R.sup.3 is --(CH.sub.2).sub.s --, ##STR2## wherein s is an integer of 1 to 4, and R.sup.4 is an alkyl group, a phenyl group or an alkyl-substituted phenyl group and SiX.sub.4.sup.2, X.sup.1 and X.sup.
    Type: Grant
    Filed: November 10, 1988
    Date of Patent: November 13, 1990
    Assignee: Chisso Corporation
    Inventors: Kouichi Kunimune, Haruo Kato, Yoshiya Kutsuzawa
  • Patent number: 4963635
    Abstract: The present invention provides a process for the production of silicon-containing polyimide presursors that have a viscosity most suitable for application, and when baked, can form a coating low in hygroscopicity, heat resistant, and having powerful adhesion, and a process for their cured silicon-containing polyimide.A process for the production of silicon-containing polyimide precursors having a logarithmic viscosity number of 0.05 to 5 dl/g by reacting A.sup.1 mol of fluorine-containing diacid anhydride, A.sup.2 mol of a diacid anhydride, B.sup.1 mol of a fluorine-containing diamine, B.sup.2 mol of a diamine, and C mol of an aminosilane with the mixing ratio of them such that A.sup.1, A.sup.2, B.sup.1, B.sup.2, and C are within ranges having prescribed relationships, and a process for the production of a silicon-containing polyimide by baking a solution of said precursor at 50.degree. to 500.degree. C.
    Type: Grant
    Filed: February 24, 1989
    Date of Patent: October 16, 1990
    Assignee: Chisso Corporation
    Inventors: Kouichi Kunimune, Yoshiya Kutsuzawa
  • Patent number: 4959437
    Abstract: A process for producing a silicon-containing polyamic acid affording a silicon-containing polyimide having a low thermal expansion coefficient and a process for producing the silicon-containing polyimide are provided, the former process comprising reacting pyromellitic acid dianhydride (A.sup.1 mols) and 3,3',4,4'-biphenyltetracarboxylic acid dianhydride (A.sup.2 mols) with a diamine of the following formula (I) (B mols) and an aminosilicon compound of the formula (II) so as to satisfy the following expressions (III) and (IV): ##STR1## wherein R.sup.1 is methyl, ethyl, methoxy, ethoxy or halogen; R.sup.2 is alkyl or alkyl-substituted phenyl; X is a hydrolyzable alkoxy, acetoxy or halogen; m is 0, 1 or 2; n is 1 or 2; and k is 1, 2 or 3; andthe latter process comprising baking a solution of the above silicon-containing polyamic acid at 50.degree. to 500.degree. C.
    Type: Grant
    Filed: June 1, 1988
    Date of Patent: September 25, 1990
    Assignee: Chisso Corporation
    Inventors: Kouichi Kunimune, Yoshiya Kutsuzawa, Shiro Konotsune
  • Patent number: 4818806
    Abstract: A process for producing a silicon-containing polyamic acid of a specified inherent viscosity as a precursor affording polyimide resins having a considerable extent of heat resistance as adhesives or resins for multilayer laminated composite materials, and a good adhesion onto inorganic materials, metals or resins, and a crosslinked silicon-containing polyimide resin prepared from the polyamic acid are provided, which process comprises reacting a tetracarboxylic acid dianhydride of formula (1) (A mols), a diamine of formula (2) (B mols) and an aminosilicon compound of formula (3) (C mols), satisfying the expressions of (4) and (5): ##STR1## wherein R.sup.1 is a tetravalent carboxylic aromatic group; R.sup.2 is an aliphatic, alicyclic, aromatic aliphatic or carboyclic aromatic group each of a specified number of carbon atoms, a specified polysiloxane group, or a formula of ##STR2## wherein R.sup.8 is a specified hydrocarbon group or hydrogen atom; ##STR3## (s: 1 to 4); R.sup.
    Type: Grant
    Filed: September 2, 1987
    Date of Patent: April 4, 1989
    Assignee: Chisso Corporation
    Inventors: Kouichi Kunimune, Yoshiya Kutsuzawa, Hiromi Egawa, Shiro Konotsune
  • Patent number: 4672099
    Abstract: A novel soluble polyimide-siloxane precursor having a good storage stability in solution and forming a superior coating on silicon wafer, glass, etc. under heating conditions of low temperature and short time; a process for producing the same; and a cross-linked polyimidesiloxane obtained by heating the above precursor are provided, which precursor hasan imide-amic acid chain part expressed by the formula (1) ##STR1## bonded by a bonding structure expressed by the formula (5)--SiR.sup.7.sub.3-k Y.sup.1.sub.k-1 --O--SiR.sup.7.sub.3-k Y.sup.1.sub.k-1 -- (5)wherein each I, in a total number of m+n+1, represents independently any one of constituting units expressed by the following formulas (2), (3) and (4): ##STR2## wherein R.sup.1 represents a tetravalent carbocyclic aromatic group; R.sup.2, R.sup.4, R.sup.5, R.sup.6, R.sup.7 and Y.sup.1 each are a specified group; l is 1 to 100; m is 0 or an integer; n is an integer; and 1.ltoreq.k.ltoreq.
    Type: Grant
    Filed: February 27, 1986
    Date of Patent: June 9, 1987
    Assignee: Chisso Corporation
    Inventors: Kouichi Kunimune, Yoshiya Kutsuzawa, Shiro Konotsune
  • Patent number: 4656238
    Abstract: A novel soluble polyimide-siloxane precursor useful for forming a superior coating on silicon wafer, glass, etc. and a process for producing the same are provided, which precursor has an imide-amic acid chain part expressed by --R.sup.3 --(I)--R.sup.2 --(I)].sub.n R.sup.3 --, bonded by a bonding structure expressed by --SiR.sup.4.sub.3-m Y.sup.1.sub.m-1 --O--SiR.sup.4.sub.3-m Y.sup.1.sub.m-1 --, wherein (I) is either one of formulas (2), (3) or (4) ##STR1## wherein R.sup.1 is a tetravalent carbocyclic aromatic group; R.sup.2, R.sup.3, R.sup.4 and Y.sup.1 each are a specified group; 1.ltoreq.m.ltoreq.3; the precursor further being terminated by Y.sup.2.sub.m R.sup.4.sub.3-m Si-- wherein Y.sup.2 is a specified group and having a percentage imidization as defined relative to the quantities of (2), (3) and (4), of 50-100% and also an inherent viscosity as specifically defined, of 0.05 to 5 dl/g, the above n being an integer defined so as to give the above inherent viscosity value.
    Type: Grant
    Filed: September 24, 1985
    Date of Patent: April 7, 1987
    Assignee: Chisso Corporation
    Inventors: Kouichi Kunimune, Yoshiya Kutsuzawa, Shiro Konotsune
  • Patent number: 4591653
    Abstract: A silicone-polyimide precursor which affords a coating having a conspicuous adhesion onto silicon wafer, glass, etc. and also an improved strength, hardness, etc. after baking, and a process for producing the same are provided,which precursor is expressed by the formula (1) ##STR1## wherein R.sup.1 represents a tetravalent, carbocyclic aromatic group; R.sup.2, R.sup.3 and R.sup.6 are the same or different groups being 1.about.6 C alkyl, phenyl or alkyl-substituted phenyl of 7.about.12 C; R.sup.4 and R.sup.5 are the same or different groups being ##STR2## wherein s represents an integer of 1 to 4; said group ##STR3## has an average formula weight of 368 to 7,968; X represents alkoxy, acetoxy, halogen atom or hydroxy; ms at both the ends of the formula (1) independently represent an integer of 1 to 3; and l represents an integer of 1 to 30; andwhich process comprises reacting the following compounds (2), (3) and (4): ##STR4## wherein the symbols R.sup.1, etc.
    Type: Grant
    Filed: August 28, 1985
    Date of Patent: May 27, 1986
    Assignee: Chisso Corporation
    Inventors: Kouichi Kunimune, Yoshiya Kutsuzawa, Shiro Konotsune