Patents by Inventor Yoshiya Takahira

Yoshiya Takahira has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacturing method of semiconductor device
    Patent number: 7795137
    Abstract: When a tungsten film (43) is embedded inside of a conductive groove (4A) formed in a wafer (W2) and a silicon oxide film (36) thereon and having a high aspect ratio, film formation and etch back of the tungsten film (43) are successively performed in a chamber of the same apparatus, therefore, a film thickness of the tungsten film (43) deposited in one film formation step is made to be thin. Whereby problems, such as exfoliation of the tungsten film (43), generation of micro-cracks, and occurrence of warpage and cracks of the wafer (W2), are avoided.
    Type: Grant
    Filed: August 25, 2006
    Date of Patent: September 14, 2010
    Assignees: Hitachi, Ltd., Honda Motor Co., Ltd.
    Inventors: Toshio Saito, Akira Otaguro, Manabu Otake, Yoshiya Takahira, Namio Katagiri, Nobuaki Miyakawa
  • MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    Publication number: 20100015797
    Abstract: When a tungsten film (43) is embedded inside of a conductive groove (4A) formed in a wafer (W2) and a silicon oxide film (36) thereon and having a high aspect ratio, film formation and etch back of the tungsten film (43) are successively performed in a chamber of the same apparatus, therefore, a film thickness of the tungsten film (43) deposited in one film formation step is made to be thin. Whereby problems, such as exfoliation of the tungsten film (43), generation of micro-cracks, and occurrence of warpage and cracks of the wafer (W2), are avoided.
    Type: Application
    Filed: August 25, 2006
    Publication date: January 21, 2010
    Inventors: Toshio Saito, Akira Otaguro, Manabu Otake, Yoshiya Takahira, Namio Katagiri, Nobuaki Miyakawa