Abstract: A method for producing a dye-sensitized solar cell includes: preparing a first electrode comprising a transparent substrate and a transparent conductive film, and a second electrode comprising a metal substrate that is formed of a metal capable of forming a passivation film; forming an oxide semiconductor layer on the first electrode; supporting a photosensitized dye on the oxide semiconductor layer; disposing an electrolyte on the oxide semiconductor layer; facing the first electrode and the second electrode, and sealing the electrolyte by a sealing section; and fixing a connection member formed of a metal having lower resistance than the metal substrate, onto the surface of the metal substrate, with the surface being on the opposite side of the first electrode, in which method in fixing the connection member, the connection member is bonded to the metal substrate by resistance welding, and thereby the connection member is fixed onto the metal substrate.

Abstract: A method for producing a dye-sensitized solar cell includes: preparing a first electrode comprising a transparent substrate and a transparent conductive film, and a second electrode comprising a metal substrate that is formed of a metal capable of forming a passivation film; forming an oxide semiconductor layer on the first electrode; supporting a photosensitized dye on the oxide semiconductor layer; disposing an electrolyte on the oxide semiconductor layer; facing the first electrode and the second electrode, and sealing the electrolyte by a sealing section; and fixing a connection member formed of a metal having lower resistance than the metal substrate, onto the surface of the metal substrate, with the surface being on the opposite side of the first electrode, in which method in fixing the connection member, the connection member is bonded to the metal substrate by resistance welding, and thereby the connection member is fixed onto the metal substrate.

Abstract: Disclosed is a plated flat conductor including a flat conductor of copper or a copper alloy and a plated layer formed on a surface of the flat conductor. The plated layer includes a first intermetallic compound layer of Cu3Sn disposed on the surface of the flat conductor, a second intermetallic compound layer of Cu6Sn5 formed on the first intermetallic compound, and a superficial layer formed on the second intermetallic compound layer. The superficial layer is plating material of pure tin or a tin alloy and has an average thickness from about 0.3 ?m to 1.0 ?m and a maximum thickness of about 1.0 ?m or less. A volume ratio of the second intermetallic compound layer to the first intermetallic compound layer is about 1.5 or more.

Abstract: Disclosed is a plated flat conductor including a flat conductor of copper or a copper alloy and a plated layer formed on a surface of the flat conductor. The plated layer includes a first intermetallic compound layer of Cu3Sn disposed on the surface of the flat conductor, a second intermetallic compound layer of Cu6Sn5 formed on the first intermetallic compound, and a superficial layer formed on the second intermetallic compound layer. The superficial layer is plating material of pure tin or a tin alloy and has an average thickness from about 0.3 ?m to 1.0 ?m and a maximum thickness of about 1.0 ?m or less. A volume ratio of the second intermetallic compound layer to the first intermetallic compound layer is about 1.5 or more.