Patents by Inventor Yoshiyasu Kuwabara

Yoshiyasu Kuwabara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20220262710
    Abstract: A semiconductor device includes a semiconductor chip in which a field effect transistor mainly containing GaN is formed on a surface of a SiC semiconductor substrate. The semiconductor device includes a metal base on which a back surface of the semiconductor chip is mounted through a conductive adhesive material containing Ag and a resin mold configured to seal the semiconductor chip. A metal having wettability lower than wettability of Au or Cu with respect to Ag is exposed in a region extending along an edge of the back surface.
    Type: Application
    Filed: May 6, 2022
    Publication date: August 18, 2022
    Applicant: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
    Inventors: Hisashi SHIMURA, Yoshiyasu KUWABARA
  • Semiconductor device and method of manufacturing the same
    Patent number: 11362024
    Abstract: A semiconductor device includes a semiconductor chip in which a field effect transistor mainly containing GaN is formed on a surface of a SiC semiconductor substrate. The semiconductor device includes a metal base on which a back surface of the semiconductor chip is mounted through a conductive adhesive material containing Ag and a resin mold configured to seal the semiconductor chip. A metal having wettability lower than wettability of Au or Cu with respect to Ag is exposed in a region extending along an edge of the back surface.
    Type: Grant
    Filed: May 29, 2019
    Date of Patent: June 14, 2022
    Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
    Inventors: Hisashi Shimura, Yoshiyasu Kuwabara
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20190371714
    Abstract: A semiconductor device includes a semiconductor chip in which a field effect transistor mainly containing GaN is formed on a surface of a SiC semiconductor substrate. The semiconductor device includes a metal base on which a back surface of the semiconductor chip is mounted through a conductive adhesive material containing Ag and a resin mold configured to seal the semiconductor chip. A metal having wettability lower than wettability of Au or Cu with respect to Ag is exposed in a region extending along an edge of the back surface.
    Type: Application
    Filed: May 29, 2019
    Publication date: December 5, 2019
    Applicant: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
    Inventors: Hisashi Shimura, Yoshiyasu Kuwabara