Abstract: In a method for correcting a picked-up image signal of an image pickup apparatus including: a solid-state imaging device having a plurality of pixels which are arranged in a two-dimensional array form in a surface portion of a semiconductor substrate, and an amplifier which is provided at the semiconductor substrate, and which amplifies signals that are detected by the pixels in accordance with an amount of incident light; and an image signal processing section which processes a signal output from the amplifier, each of the pixels senses light emission produced when the amplifier operates, through the semiconductor substrate to obtain a signal amount as a correction amount, and the correction amount is subtracted from a detection signal amount of the pixel which is output from the amplifier, to correct the detection amount.

Abstract: An imaging apparatus includes: a solid-state imaging device including a semiconductor substrate, a plurality of photoelectric conversion elements provided in the semiconductor substrate and a spectral element which is provided over the plurality of photoelectric conversion elements that are consecutive in a straight-line manner, in which a trapezoidal opening longitudinal in a direction from a bottom side into which light incident on the plurality of photoelectric conversion elements is introduced to a top side is provided, and which makes a spectral separation occur in the longitudinal direction by interference between the incident light and light reflected from an inner side surface of the trapezoidal opening; and a polarizing element which is provided on an optical path from a photographic subject to the solid-state imaging device and which allows polarized light to be transmitted therethrough.

Abstract: A solid-state imaging device includes a plurality of photoelectric conversion elements provided at a surface portion of a semiconductor substrate by being arranged in a form of a two-dimensional array, spectral elements each provided on a number of the photoelectric conversion elements which are arranged linearly, a trapezoidal opening which is longitudinally elongated in a direction from a base toward an upper side thereof and which introduces incident light to the number of the photoelectric conversion elements being provided in each of the spectral elements, so as to cause spectral separation in the longitudinal direction by interference between the incident light and light reflected on inner side surfaces of the trapezoidal opening and a signal reading unit for reading a signal which is detected by each of the number of the photoelectric conversion elements arranged in the longitudinal direction by receiving the light incident through the trapezoidal opening.

Abstract: In a method for correcting a picked-up image signal of an image pickup apparatus including: a solid-state imaging device comprising a plurality of pixels which are arranged in a two-dimensional array form in a surface portion of a semiconductor substrate, and an amplifier which is provided at the semiconductor substrate, and which amplifies signals that are detected by the pixels in accordance with an amount of incident light; and an image signal processing section which processes a signal output from the amplifier, each of the pixels senses light emission produced when the amplifier operates, through the semiconductor substrate to obtain a signal amount as a correction amount, and the correction amount is subtracted from a detection signal amount of the pixel which is output from the amplifier, to correct the detection amount.

Abstract: An imaging apparatus includes: a solid-state imaging device including a semiconductor substrate, a plurality of photoelectric conversion elements provided in the semiconductor substrate and a spectral element which is provided over the plurality of photoelectric conversion elements that are consecutive in a straight-line manner, in which a trapezoidal opening longitudinal in a direction from a bottom side into which light incident on the plurality of photoelectric conversion elements is introduced to a top side is provided, and which makes a spectral separation occur in the longitudinal direction by interference between the incident light and light reflected from an inner side surface of the trapezoidal opening; and a polarizing element which is provided on an optical path from a photographic subject to the solid-state imaging device and which allows polarized light to be transmitted therethrough.

Abstract: A solid-state imaging device includes a plurality of photoelectric conversion elements provided at a surface portion of a semiconductor substrate by being arranged in a form of a two-dimensional array, spectral elements each provided on a number of the photoelectric conversion elements which are arranged linearly, a trapezoidal opening which is longitudinally elongated in a direction from a base toward an upper side thereof and which introduces incident light to the number of the photoelectric conversion elements being provided in each of the spectral elements, so as to cause spectral separation in the longitudinal direction by interference between the incident light and light reflected on inner side surfaces of the trapezoidal opening and a signal reading unit for reading a signal which is detected by each of the number of the photoelectric conversion elements arranged in the longitudinal direction by receiving the light incident through the trapezoidal opening.

Abstract: A solid-state imaging device 5 includes photoelectric conversion elements 51R, 51G, 51B; and photoelectric conversion elements 51r, 51g, 51b. An exposure period for the photoelectric conversion elements 51r, 51g, 51b is controlled shorter than that for the photoelectric conversion elements 51R, 51G, 51B. During the exposure period for the photoelectric conversion elements 51R, 51G, 51B, an imaging device driving section 10 applies a readout pulse to transfer electrodes V2, V6, reads out electric charges accumulated in the photoelectric conversion elements 51r, 51g, 51b into vertical electric charge transfer paths 54, and controls to start exposure of the photoelectric conversion element 51r, 51g, 51b. During a period from start of the exposure of the photoelectric conversion elements 51R, 51G, 51B to the applying of the readout pulse, the imaging device driving section 10 applies a transfer pulse of a low level to the transfer electrodes V1 to V8.