Abstract: A magnetoresistive sensor includes a magnetic field detecting portion composed of a ferromagnetic thin film formed on one side of an insulating rectangular substrate, at least two terminal electrode portions and wiring portions. In the magnetoresistive sensor, the surface level of at least two corner portions is lower than that of the surface portion of the substrate other than at least two corner portions on the one side of the substrate, the at least two terminal electrode portions are separately formed at the corner portions having the lower surface level and the magnetic field detecting portion composed of the ferromagnetic thin film is formed on a portion of the surface of the substrate other than the at least two corner portions.

Abstract: Magnetoresistive elements of ferromagnetic material having a high sensitivity and an excellent reliability have been manufactured. According to such an element, the sensitivity thereof can be enhanced by restricting the sheet resistance of wiring portions to a low value, and it is possible to prevent generation of an offset voltage due to a discrepancy in alignment by broadening the width of wiring portions at the connecting portions between magnetically sensitive members and the wiring portions to be wider than that of the magnetically sensitive members and arranging the connecting portions so as to be disposed in a geometrically symmetrical relationship therebetween. Such a structure is adapted for connecting the magnetically members and the wiring portions in a self-aligning manner.