Abstract: A radiation-sensitive resin composition comprising a solution of an alkali-soluble resin and a radiation-sensitive compound in a solvent comprising a monooxymonocarboxylic acid ester. This composition has a high storage stability (i.e., a very small amount of fine particles are formed during storage) and is suited for use as a resist for making integrated circuits.

Abstract: A radiation-sensitive resin composition comprising a solution of an alkali-soluble resin and a radiation-sensitive compound in a solvent comprising a monooxymono-carboxylic acid ester. This composition has a high storage stability (i.e., a very small amount of fine particles are formed during storage) and is suited for use as a resist for making integrated circuits.

Abstract: A radiation-sensitive resin composition comprising a solution of an alkali-soluble resin and a radiation-sensitive compound in a solvent comprising a monooxymono-carboxylic acid ester. This composition has a high storage stability (i.e., a very small amount of fine particles are formed during storage) and is suited for use as a resist for making integrated circuits.

Abstract: A radiation-sensitive resin composition comprising a solution of an alkali-soluble resin and a radiation-sensitive compound in a solvent comprising a monoxymono-carboxylic acid ester. This composition has a high storage stability (i.e., a very small amount of fine particles are formed during storage) and is suited for use as a resist for making integrated circuits.

Abstract: A radiation-sensitive resin composition comprising a solution of an alkali-soluble resin and a radiation-sensitive compound in a solvent comprising a monooxymonocarboxylic acid ester. This composition has a high storage stability (i.e., a very small amount of fine particles are formed during storage) and is suited for use as a resist for making integrated circuits.

Abstract: A radiation-sensitive resin composition comprising a solution of an alkali-soluble resin and a radiation-sensitive compound in a solvent comprising a monooxymonocarboxylic acid ester. This composition has a high storage stability (i.e., a very small amount of fine particles are formed during storage) and is suited for use as a resist for making integrated circuits.

Abstract: A radiation-sensitive resin composition comprising a solution of an alkali-soluble resin and a radiation-sensitive compound in a solvent comprising a monooxymonocarboxylic acid ester. This composition has a high storage stability (i.e., a very small amount of fine particles are formed during storage) and is suited for use as a resist for making integrated circuits.

Abstract: A radiation-sensitive resin composition comprising a solution of an alkali-soluble resin and a radiation-sensitive compound in a solvent comprising a monooxymonocarboxylic acid ester. This composition has a high storage stability (i.e., a very small amount of fine particles are formed during storage) and is suited for use as a resist for making integrated circuits.

Abstract: A positive type radiation-sensitive resin composition which comprises a 1,2-quinonediazide compound and an alkali-soluble novolac resin produced by poly-condensing phenols represented by the formulas (I) and (II) in a molar ratio of (I)/(II) of 1/99 to 100/0 with a carbonyl compound: ##STR1## wherein R.sup.1 and R.sup.2, which may be the same or different, represent hydroxyl groups, hydrogen atoms, alkyl groups, aryl groups, aralkyl groups, alkenyl groups, halogen atoms, alkoxy groups, alkoxycarbonyl groups, aroxycarbonyl groups, alkanoyloxy groups, aroyloxy groups, acyl groups, cyano groups or nitro groups, ##STR2## wherein R.sup.3, R.sup.4 and R.sup.5, which may be the same or different, represent hydrogen atoms, alkyl groups, aryl groups, aralkyl groups, alkenyl groups, halogen atoms, alkoxy groups, alkoxycarbonyl groups, aroxycarbonyl groups, alkanoyloxy groups, aroyloxy groups, acyl groups, cyano groups or nitro groups.

Abstract: A radiation-sensitive resin composition comprising a quinonediazide-type radiation-sensitive resin and a compound generating an acid upon irradiation. Said radiation-sensitive resin composition can be used as a resist suitable for dry development by plasma etching and enables one to obtain an etching image having high precision with high reproducibility at a high degree of resolution and selectivity.

Abstract: A method for high temperature reaction process, including the steps of mounting a substrate on which a radiation-sensitive polymer film is formed on a lower heating plate in a reaction vessel, sealing the reaction vessel while positioning an upper heating plate to above the substrate, maintaining a temperature difference between temperatures of the lower heating plate and the upper heating plate within a predetermined range, and supplying a reactive compound into the reaction vessel.

Abstract: A reactive ion etching apparatus used in the manufacturing process of semiconductor elements such as ICs and LSIs is herein disclosed. The material to be etched is supported by a chucking device disposed on a negative electrode and in this apparatus, a magnetic field parallel to the surface of the material to be etched is generated. The reactive ion etching is carried out while cooling the negative electrode to a temperature of not more than 0.degree. C.

Abstract: An ionizing radiation sensitive resist consisting essentially of a polymer having a recurring unit represented by the following formula: ##STR1## wherein X is a hydrogen atom, a methyl group, or a halogen atom and R.sup.1, R.sup.2, R.sup.3, R.sup.4 and R.sup.5, which may be identical or different, are hydrogen atoms, halogen atoms, alkyl groups having 1 to 3 carbon atoms, alkoxy groups having 1 to 3 carbon atoms, haloalkyl groups having 1 to 3 carbon atoms or haloalkoxy groups having 1 to 3 carbon atoms, at least a part of the X groups present in said polymer being a halogen atom, at least a part of the Y.sup.1 and Y.sup.2 group present in said polymer being a halogen atom, and at least a part of the R.sup.1, R.sup.2, R.sup.3, R.sup.4 and R.sup.5 groups present in said polymer being a haloalkyl or haloalkoxy group having 1 to 3 carbon atoms. Said ionizing radiation sensitive resist is suitable as a negative type resist.

Abstract: A positive type photosensitive resin composition comprising an alkali-soluble novolac resin and (A) a compound represented by the following general formula (I) and a compound represented by the following general formula (II) or (B) a compound represented by the following general formula (III) and a compound represented by the following general formula (IV), wherein the molar ratio of the compound represented by the general formula (I) to the compound represented by the general formula (II) is 6/4-9/1 or the molar ratio of the compound represented by the general formula (III) to the compound represented by the general formula (IV) is 1/9-9/1 and the total amount of the component (A) or (B) is 5-100 parts by weight per 100 parts by weight of the alkali-soluble novolac resin: ##STR1## wherein R.sub.1, R.sub.5, R.sub.8 and R.sub.10, which may be identical or different, represent alkyl groups, aryl groups or aralkyl groups; and R.sub.2, R.sub.3, R.sub.4, R.sub.6, R.sub.7, R.sub.9, R.sub.11 and R.sub.

Abstract: By adding a compound represented by the following general formulas: ##STR1## to a conventional photoresist composition comprising a cyclized product of conjugated diene homopolymer or copolymer and a photo-crosslinking agent soluble in an organic solvent, an image having a high degree of resolution can be obtained even when a base board having a surface of a high reflectance is used, with a high reproducibility and without being affected by prebaking conditions.

Abstract: A photosensitive resin composition comprising a 1,2-quanonediazide compound and a copolymer consisting essentially of (A) a conjugated diolefinic compound, (B) a monoolefinically unsaturated compound and (C) an .alpha.,.beta.-ethylenically unsaturated carboxylic acid. Said composition can provide a positive type resist which is difficult to break and excellent in adhesion to a substrate.

Abstract: By adding a compound represented by the following general formulas: ##STR1## to a conventional photoresist composition comprising a cyclized product of conjugated diene polymer or copolymer and a photo-crosslinking agent soluble in an organic solvent, an image having a high degree of resolution and only a small number of pinholes can be obtained even when a base board having a surface of a high reflectance is used.

Abstract: A photosensitive resin film consisting of a monolayer film of a composition comprising (a) a cyclized product of butadiene polymer, (b) at least one member selected from the group consisting of a photo-crosslinking agent, a photo-sensitizer and a photo-polymerization initiator, and (c) a storage stabilizer, and if necessary, a dye and/or a pigment, or a laminate structure photosensitive resin film prepared by laminating to the above photosensitive resin film a composition comprising (d) 100 parts by weight of a polymer or copolymer of monoolefinically unsaturated compound, (e) 5 to 100 parts by weight of a polyfunctional, photo-polymerizable, unsaturated compound having at least two photo-polymerizable double bonds in the molecule, (f) at least one member selected from the group consisting of a photo-crosslinking agent, a photo-sensitizer and a photo-polymerization initiator, and (g) a storage stabilizer, and if necessary, a dye and/or a pigment.

Abstract: A photoresist composition comprising a cyclized product obtained by contacting a conjugated diene polymer or copolymer having unsaturations in the main chain or side chains with a fluorine-containing substituted sulfonic acid compound represented by the formula:CF.sub.n H.sub.3-n SO.sub.3 R or CF.sub.n H.sub.3-n SO.sub.2 Xwherein R is hydrogen, alkyl or CF.sub.n H.sub.3-n SO.sub.2, X is halogen, and n is 1, 2 or 3, in an inert solvent, and a photosensitive crosslinking agent soluble in an organic solvent. The resist pattern obtained from said composition has excellent heat resistance. Also, when a silicon oxide film having said resist pattern is etched, the number of pinholes formed is very small.

Abstract: A photosensitive resin composition comprising (I) a copolymer containing (A) 10 to 95 mol % of a conjugated diolefinic hydrocarbon, (B) 5 to 90 mol % of an .alpha.,.beta.-ethylenically unsaturated carboxylic acid and (C) 0 to 85 mol % of a monoolefinically unsaturated compound, (II) a photosensitizer and/or a photosensitive crosslinking agent, and, if necessary, (III) a photopolymerizable unsaturated monomer. Said copolymer may have been reacted with an inorganic alkali, an alkali salt or an amine compound in a proportion of 0.05 to 1.0 equivalent per equivalent of the carboxyl group of the .alpha.,.beta.-ethylenically unsaturated carboxylic acid in said copolymer.