Abstract: Provided is a phosphonium compound represented by Formula (I): in Formula (I), R1, R2, and R3 are independently from each other, an alkyl group or an aryl group, the alkyl group is a substituted or unsubstituted, linear or branched alkyl group having 1 to 20 carbon atoms or a substituted or unsubstituted cyclic alkyl group having 5 to 20 carbon atoms, the aryl group is a substituted or unsubstituted aryl group having 6 to 20 carbon atoms; X is a reactive group having a hydrazide group, a halide group, a pseudohalide group, or a thioester group; and Y? is an anion having a total charge of ?1, or Y? is absence.

Abstract: A laser therapeutic device for a laser endoscope capable of relatively reducing the diameter of the endoscope while being capable of emitting a laser beam of a uniform intensity over a wide area is provided. An optical guide element (a square-shaped rod lens 15, a guide tube 2b) having a quadrangular cross section and guiding a therapeutic laser beam emitted from the tip of an optical fiber toward the tip side of a probe is used. On the tip side of a probe tube 2 being a barrel, using clearances C1 to C4 formed between the optical guide element and the inner circumferential surface of the probe tube, a camera unit 11 as imaging means and white-color LED units 12 and an ultraviolet LED unit 13 as illumination means are arranged.

Abstract: A laser therapeutic device for a laser endoscope capable of relatively reducing the diameter of the endoscope while being capable of emitting a laser beam of a uniform intensity over a wide area is provided. An optical guide element (a square-shaped rod lens 15, a guide tube 2b) having a quadrangular cross section and guiding a therapeutic laser beam emitted from the tip of an optical fiber toward the tip side of a probe is used. On the tip side of a probe tube 2 being a barrel, using clearances C1 to C4 formed between the optical guide element and the inner circumferential surface of the probe tube, a camera unit 11 as imaging means and white-color LED units 12 and an ultraviolet LED unit 13 as illumination means are arranged.

Abstract: Disclosed is a semiconductor device which includes a substrate 11, a thin film transistor 20 having a first semiconductor layer 16A that is supported by the substrate 11, a thin film diode 30 having a second semiconductor layer 16B that is supported by the substrate 11, and a metal layer 12 that is formed between the substrate 11 and the second semiconductor layer 16B. The first semiconductor layer 16A is a laterally grown crystalline semiconductor film, and the second semiconductor layer 16B is a crystalline semiconductor film that contains fine crystal grains. The average surface roughness of the second semiconductor layer 16B is higher than the average surface roughness of the first semiconductor layer 16A. Consequently, the optical sensitivity of the TFD is improved and the reliability of the TFT is improved, as compared with those in the conventional semiconductor devices.

Abstract: In an active-matrix substrate (100) according to the present invention, a semiconductor layer (110) has a first gettering region (112) adjacent to the source region (132) of a first thin-film transistor (130), a second gettering region (114) adjacent to the drain region (146) of a second thin-film transistor (140), and a third gettering region (116) adjacent to any of the source and drain regions located between the respective channel regions (134 and 144) of the first and second thin-film transistors (130 and 140) among the source and drain regions of the thin-film transistors included in the thin-film transistor element (120).

Abstract: Disclosed is a semiconductor device which includes a substrate 11, a thin film transistor 20 having a first semiconductor layer 16A that is supported by the substrate 11, a thin film diode 30 having a second semiconductor layer 16B that is supported by the substrate 11, and a metal layer 12 that is formed between the substrate 11 and the second semiconductor layer 16B. The first semiconductor layer 16A is a laterally grown crystalline semiconductor film, and the second semiconductor layer 16B is a crystalline semiconductor film that contains fine crystal grains. The average surface roughness of the second semiconductor layer 16B is higher than the average surface roughness of the first semiconductor layer 16A. Consequently, the optical sensitivity of the TFD is improved and the reliability of the TFT is improved, as compared with those in the conventional semiconductor devices.

Abstract: In an active-matrix substrate (100) according to the present invention, a semiconductor layer (110) has a first gettering region (112) adjacent to the source region (132) of a first thin-film transistor (130), a second gettering region (114) adjacent to the drain region (146) of a second thin-film transistor (140), and a third gettering region (116) adjacent to any of the source and drain regions located between the respective channel regions (134 and 144) of the first and second thin-film transistors (130 and 140) among the source and drain regions of the thin-film transistors included in the thin-film transistor element (120).

Abstract: This invention is to provide a technology for preventing information from being leaked from a mobile phone. For this purpose, this invention includes: receiving a request for data to select a calling destination from a first mobile phone capable of executing voice communication and data communication; identifying calling destination candidates registered in a data storage in association with a user of the first mobile phone by identification information other than telephone numbers of the calling destination candidates; and transmitting data to specify and select anyone of the identified calling destination candidates by the identification information other than the telephone numbers of the calling destination candidates, to the first mobile phone. Because the telephone number of the client is not sent to the mobile phone, the leakage of the client information is prevented, even if the mobile phone is stolen.

Abstract: A semiconductor laser device comprises: a cladding layer of a first conductivity type; an active layer provided on the cladding layer; and a cladding layer of a second conductivity type provided on the active layer. At least a part of the cladding layer of the second conductivity type has a ridge stripe. The ridge stripe includes: an upper part having substantially vertical sidewalls; and a lower portion having sidewalls inclined so that the stripe becomes wider toward the active layer.

Abstract: A high-output semiconductor laser of a real index-guided structure comprises: a first conductive type clad layer; active layer for emitting light by current injection; second conductive type first clad layer; second conductive type second clad layer as a ridge waveguide; current-blocking layer formed in both sides of the second conductive type second clad layer and having a larger band gap than those of the second conductive type first and second clad layers; and second conductive type third clad layer having a mobility enough to guide a current to the second conductive type second clad layer and prevent a flow of a leak current into the current-blocking layer.

Abstract: Disclosed is a semiconductor laser element including: a double heterojunction structure having a p-type clad layer; a second p-type clad layer formed on the double heterojunction structure, having a first dopant and a ridge shape; a p-type contact layer formed on the second p-type clad layer, having a second dopant whose diffusion velocity is slower than that of the first dopant; a dielectric film covering a side surface of the second p-type clad layer and the p-type contact layer, and a surface on which the second p-type clad layer is not formed on the double heterojunction structure; and a p-side electrode formed on the p-type contact layer. Meanwhile, disclosed is a semiconductor laser element including a similar double heterojunction structure, a second p-type clad layer, a p-type contact layer, and a p-side electrode, with end faces of cleavages of the double heterojunction structure thereof being an unmarshalled layer structure.

Abstract: After profiles of two chips are recognized on intermediate stages and their positions are corrected, collets are used as electrodes and a voltage is applied to the chips on bonding stage on which the chips are bonded onto a submount. Then, the respective two chips are allowed to emit light, final position correction is performed on the basis of the light-emission point data and bonding is performed. The two chips can be bonded at narrow pitches by tilting the collets with respect to chip surfaces. Consequently, two laser chips can be bonded at narrow pitches on one submount in high position accuracy.

Abstract: A semiconductor laser device comprises: a cladding layer of a first conductivity type; an active layer provided on the cladding layer; and a cladding layer of a second conductivity type provided on the active layer. At least a part of the cladding layer of the second conductivity type has a ridge stripe. The ridge stripe includes: an upper part having substantially vertical sidewalls; and a lower portion having sidewalls inclined so that the stripe becomes wider toward the active layer.

Abstract: A high-output semiconductor laser of a real index-guided structure comprises: a first conductive type clad layer; active layer for emitting light by current injection; second conductive type first clad layer; second conductive type second clad layer as a ridge waveguide; current-blocking layer formed in both sides of the second conductive type second clad layer and having a larger band gap than those of the second conductive type first and second clad layers; and second conductive type third clad layer having a mobility enough to guide a current to the second conductive type second clad layer and prevent a flow of a leak current into the current-blocking layer.

Abstract: The present invention is directed to a semiconductor laser which is comprised of a cladding layer (103) of a fist conductivity type having a vertically uniform distribution of refractive index, an active layer (107) laid over the cladding layer of the first conductivity type, a cladding layer (108, 110) of a second conductivity type laid over the active layer, having a vertically uniform distribution of refractive index, and having ridges shaped therein, each ridge extending in parallel with a direction of laser oscillation, and a current blocking layer (113) provided on opposite flanks of each ridge. In the semiconductor laser, current of which flow is pinched by the current blocking layer is introduced into the active layer thorough the upper opening of the ridge.

Abstract: After profiles of two chips are recognized on intermediate stages and their positions are corrected, collets are used as electrodes and a voltage is applied to the chips on bonding stage on which the chips are bonded onto a submount. Then, the respective two chips are allowed to emit light, final position correction is performed on the basis of the light-emission point data and bonding is performed. The two chips can be bonded at narrow pitches by tilting the collets with respect to chip surfaces. Consequently, two laser chips can be bonded at narrow pitches on one submount in high position accuracy.

Abstract: After profiles of two chips are recognized on intermediate stages and their positions are corrected, collets are used as electrodes and a voltage is applied to the chips on bonding stage on which the chips are bonded onto a submount. Then, the respective two chips are allowed to emit light, final position correction is performed on the basis of the light-emission point data and bonding is performed. The two chips can be bonded at narrow pitches by tilting the collets with respect to chip surfaces. Consequently, two laser chips can be bonded at narrow pitches on one submount in high position accuracy.

Abstract: After profiles of two chips are recognized on intermediate stages and their positions are corrected, collets are used as electrodes and a voltage is applied to the chips on bonding stage on which the chips are bonded onto a submount. Then, the respective two chips are allowed to emit light, final position correction is performed on the basis of the light-emission point data and bonding is performed. The two chips can be bonded at narrow pitches by tilting the collets with respect to chip surfaces. Consequently, two laser chips can be bonded at narrow pitches on one submount in high position accuracy.

Abstract: A capacitor constituted of a dielectric ceramic material is provided with through holes, with electrodes formed at the two surfaces at which the through holes open. One of the electrodes is secured onto a raised portion of a grounding metal. Conductors which pass through the capacitor and the grounding metal are electrically connected to an electrode opposite the electrode secured onto a raised portion of the grounding metal. Insulating resins fill the spaces around the capacitor. One end surface of an insulating cover is set facing opposite an inner surface of the raised portion of the grounding metal over a gap with an inner insulating resin filling the gap.

Abstract: A method of recording a large quantity of data by one code mark. Four bit indicating fields (2a, 2b, 2c, 2d) for denoting a binary number of four bits are provided on the surface of a card (1). One numerical value is recorded by indicating predetermined bit parts of the four bit indicating fields (2a-2d) with the same color, and plural kinds of colors are mixedly given to the four bit indicating fields (2a-2d).