Abstract: The present disclosure provides a support mechanism for supporting a cover that performs sealing of a furnace opening of a heat treatment furnace or release the sealing by being moved up or down by an elevating unit. The support mechanism includes a first elastic body having a first elastic modulus; and a second elastic body having a second elastic modulus larger than the first elastic modulus. A reaction force in relation to the first elastic body is applied to the cover when the cover abuts on the furnace opening by being moved up by the elevating unit, and a reaction force in relation to the first elastic body and the second elastic body is applied to the cover after the cover abuts on the furnace opening by being moved up by the elevating unit.

Abstract: A transistor whose channel is formed in a semiconductor having dielectric anisotropy is provided. A transistor having a small subthreshold swing value is provided. A transistor having normally-off electrical characteristics is provided. A transistor having a low leakage current in an off state is provided. A semiconductor device includes an insulator, a semiconductor, and a conductor. In the semiconductor device, the semiconductor includes a region overlapping with the conductor with the insulator positioned therebetween, and a dielectric constant of the region in a direction perpendicular to a top surface of the region is higher than a dielectric constant of the region in a direction parallel to the top surface.

Abstract: [Object] To accurately estimate a user's position on the basis of sensor data by preparing absolute criteria in advance. [Solution] Provided is an information processing apparatus including: a feature extractor configured to extract a feature of first sensor data provided by a sensor carried or worn by a user; a matching unit configured to match the feature of the first sensor data and a feature of second sensor data corresponding to the first sensor data, the feature of the second sensor data being associated with given position information; and a position estimation unit configured to estimate a position of the user on the basis of a result of the matching.

Abstract: A semiconductor device having stable electric characteristics is provided. The transistor includes first to third oxide semiconductor layers, a gate electrode, and a gate insulating layer. The second oxide semiconductor layer has a portion positioned between the first and third oxide semiconductor layers. The gate insulating layer has a region in contact with a top surface of the third oxide semiconductor layer. The gate electrode overlaps with a top surface of the portion with the gate insulating layer positioned therebetween. The gate electrode faces a side surface of the portion in a channel width direction with the gate insulating layer positioned therebetween. The second oxide semiconductor layer includes a region having a thickness greater than or equal to 2 nm and less than 8 nm. The length in the channel width direction of the second oxide semiconductor layer is less than 60 nm.

Abstract: A time for doping an electrode material on an electrode sheet with a lithium ion can be reduced. The electrode manufacturing apparatus includes a processing chamber 200 to and from which the electrode sheet is loaded and unloaded; and a lithium thermal spraying unit 210 configured to dope a carbon material C with the lithium ion by forming a lithium thin film on the carbon material of the electrode sheet W loaded into the processing chamber while melting and spraying lithium-containing powder. Further, the lithium thermal spraying unit 210 includes a lithium-containing powder supply unit 250 configured to discharge the lithium-containing powder toward the electrode material of the electrode sheet, and at least one heating gas supply unit 260 configured to supply a heating gas that melts the lithium-containing powder discharged from the lithium-containing powder supply unit.

Abstract: Provided is a semiconductor device in which deterioration of electric characteristics which becomes more noticeable as the semiconductor device is miniaturized can be suppressed. The semiconductor device includes a first oxide film, an oxide semiconductor film over the first oxide film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a second oxide film over the oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the second oxide film, and a gate electrode in contact with the gate insulating film. A top end portion of the oxide semiconductor film is curved when seen in a channel width direction.

Abstract: To avoid unintentionally turning off a backlight, a device includes circuitry that is configured to control a backlight to illuminate a display panel of the device; store a first preset time interval for reducing brightness of the backlight; determine that an input has not been received within the first preset time interval; acquire one or more signals from a sensor device corresponding to movement of the device; estimate whether the device is in use based on the one or more signals; and postpone a reduction in the brightness of the backlight based when a result of an estimate indicates that the device is in use.

Abstract: A transistor having favorable electrical characteristics. A transistor suitable for miniaturization. A transistor having a high switching speed. One embodiment of the present invention is a semiconductor device that includes a transistor. The transistor includes an oxide semiconductor, a gate electrode, and a gate insulator. The oxide semiconductor includes a first region in which the oxide semiconductor and the gate electrode overlap with each other with the gate insulator positioned therebetween. The transistor has a threshold voltage higher than 0 V and a switching speed lower than 100 nanoseconds.

Abstract: An information processing device includes an API (Application Programming Interface) only for reading/writing of an offset value, which is data providing disparity to a graphics image to generate an image for the left eye and an image for the right eye from the original image, arranged to store the offset value in an internal storage region that is a storage region inside of a reproducer configured to reproduce images, and to read out the offset value stored in the internal storage region.

Abstract: Disclosed is a structure that includes: an information processing apparatus that stores content into an information storage device such as a memory card including an access allowed block based on an access right check made on each block, and uses the content; a content usage managing server that provides content usage permission information to the information processing apparatus; and a content correspondence information providing server that provides the encryption key to be used in decrypting the encrypted content stored in the information storage device. The content usage managing server determines the block for storing the encryption key and notifies the content correspondence information providing server of a block identifier that is the identifier of the determined block, and the content correspondence information providing server performs a process to write the encryption key into the block corresponding to the received block identifier.

Abstract: A configuration in which a reliable source of illegal copy content is analyzed using content in which a reproduction path can be set is realized. Content which has a segment area including a plurality of items of variation data which can be decrypted using different keys and in which a reproduction path corresponding to the selected variation data can be set is used. Each item of variation data is configured such that embedded information such as a digital watermark can be acquired from decrypted data. Each item of variation data includes a 192-byte source packet or a 6144-byte aligned unit. A reproduction device selects and reproduces one item of variation data from each segment area on the basis of a variation data identifier recorded in the variation data.

Abstract: Provided is a semiconductor device in which deterioration of electric characteristics which becomes more noticeable as the semiconductor device is miniaturized can be suppressed. The semiconductor device includes a first oxide film, an oxide semiconductor film over the first oxide film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a second oxide film over the oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the second oxide film, and a gate electrode in contact with the gate insulating film. A top end portion of the oxide semiconductor film is curved when seen in a channel width direction.

Abstract: Sentence polarity determination is used to assess whether a sentence is an affirmative expression or a negative expression, and is applied for reputation analysis, etc. Polarity determination determines whether an input sentence is affirmative or negative. When some subject is being talked about, it is sometimes desired to determine whether what is being referred to in the sentence is affirmative or negative, rather than the polarity of the sentence per se. The present invention provides a method for determining the polarity of the sentence by applying a recursive polarity rule based on a dependency structure of the sentence, taking into consideration the portion of the sentence that is being referred to. Use of a recursive rule makes it possible to prevent the number of rules from becoming huge, and thereby to perform efficient polarity determination in terms of memory amount and calculation amount. The length of the dependency needed for polarity determination can also be efficiently controlled.

Abstract: A transistor whose channel is formed in a semiconductor having dielectric anisotropy is provided. A transistor having a small subthreshold swing value is provided. A transistor having normally-off electrical characteristics is provided. A transistor having a low leakage current in an off state is provided. A semiconductor device includes an insulator, a semiconductor, and a conductor. In the semiconductor device, the semiconductor includes a region overlapping with the conductor with the insulator positioned therebetween, and a dielectric constant of the region in a direction perpendicular to a top surface of the region is higher than a dielectric constant of the region in a direction parallel to the top surface.

Abstract: A semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes an insulating layer, a semiconductor layer over the insulating layer, a source electrode layer and a drain electrode layer electrically connected to the semiconductor layer, a gate insulating film over the semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode layer overlapping with part of the semiconductor layer, part of the source electrode layer, and part of the drain electrode layer with the gate insulating film therebetween. A cross section of the semiconductor layer in the channel width direction is substantially triangular or substantially trapezoidal. The effective channel width is shorter than that for a rectangular cross section.

Abstract: An information processing apparatus includes a data processing section for reproducing contents stored in a medium having a general purpose area in which encrypted contents and corresponding utilization controlling information are stored and a protected area including a plurality of blocks having access limitation set thereto and including a block having an encryption key for decrypting the encrypted contents stored therein.

Abstract: To determine whether or not a correct continuous reproduction disk has been attached, and perform control in accordance with a determination result in a data reproduction process including a first information recording medium and a second information recording medium. A first root certificate transform value is calculated by applying a first transform function to data constituting a first root certificate recorded in the first information recording medium and a second root certificate transform value is calculated by applying a second transform function to data constituting a second root certificate recorded in the second information recording medium. Transform values based on first and second root certificates are compared. A process under execution is continued when the first and second root certificate transform values match. However, the process under execution is stooped or a warning is output when the first and second root certificate transform values do not match.

Abstract: A thermal spray powder of the present invention contains a rare earth element and a group 2 element, which belongs to group 2 of the periodic table. The thermal spray powder, which contains a rare earth element and a group 2 element, is formed, for example, from a mixture of a rare earth element compound and a group 2 element compound or from a compound or solid solution containing a rare earth element and a group 2 element. The thermal spray powder may further contain a diluent element that is not a rare earth element or a group 2 element and is not oxygen, which is at least one element selected, for example, from titanium, zirconium, hafnium, vanadium, niobium, tantalum, zinc, boron, aluminum, gallium, silicon, molybdenum, tungsten, manganese, germanium, and phosphorus.

Abstract: A transistor having favorable electrical characteristics. A transistor suitable for miniaturization. A transistor having a high switching speed. One embodiment of the present invention is a semiconductor device that includes a transistor. The transistor includes an oxide semiconductor, a gate electrode, and a gate insulator. The oxide semiconductor includes a first region in which the oxide semiconductor and the gate electrode overlap with each other with the gate insulator positioned therebetween. The transistor has a threshold voltage higher than 0 V and a switching speed lower than 100 nanoseconds.

Abstract: There is provided an information processing apparatus including a processing circuit configured to receive an action recognition information which is determined on the basis of sensing information of a user associated with a position information of the user, the action recognition information indicating an action of the user related to structure or equipment of a building has occurred, and associate the structure or equipment of the building with the position information on the basis of the action recognition information.