Abstract: A recording apparatus is provided with a droplet discharging head having a nozzle forming portion and a charging unit. The nozzle forming portion includes nozzles formed therein. The charging unit is configured to impart an electrical charge to the medium. The charging unit imparts, to the medium, an electrical charge having the same polarity as an electrically charged state of the nozzle forming portion after the droplets are discharged.

Abstract: In a recording apparatus, the quality of an image is improved. A recording apparatus is provided with a droplet discharging head having a nozzle forming portion and a charging unit. The nozzle forming portion includes nozzles formed therein. The charging unit is configured to impart an electrical charge to the medium. The charging unit imparts, to the medium, an electrical charge having the same polarity as an electrically charged state of the nozzle forming portion after the droplets are discharged.

Abstract: A liquid ejecting apparatus includes a transport unit that transports a medium; an ejecting portion that is provided to a mobile portion that is movable in a crossing direction intersecting a transport direction in which the medium is transported by the transport unit, and ejects liquid onto the medium transported by the transport unit; a first neutralizer that is provided to the mobile portion and neutralizes the liquid; and a second neutralizer that is provided to the mobile portion and neutralizes the medium.

Abstract: A liquid ejecting apparatus includes a transport unit that transports a medium; an ejecting portion that is provided to a mobile portion that is movable in a crossing direction intersecting a transport direction in which the medium is transported by the transport unit, and ejects liquid onto the medium transported by the transport unit; a first neutralizer that is provided to the mobile portion and neutralizes the liquid; and a second neutralizer that is provided to the mobile portion and neutralizes the medium.

Abstract: A contactless power-receiving device, which is connected to equipment via a connection terminal and which supplies power to the load for the equipment, provided with: a secondary coil which intersects the alternating magnetic flux generated from a primary coil to which an alternating power is supplied; and a control unit which supplies induced electromotive force of the secondary coil to the load. The control unit determines the amount of charge in the load and determines whether or not to supply power to the load on the basis of the determined amount of charge.

Abstract: To provide a high-quality protection target by forming a protective film that is thin and excellent in corrosion resistance. Provided is a protective film forming method for forming a protective film at least on a surface of a protection target. The method comprises: a base film forming step for forming a base film on the surface of the protection target; and a DLC film forming step for forming a diamond-like carbon film on the base film. The base film forming step forms the base film on the surface of the protection target for a plurality of times by repeating a process of depositing the base film in a prescribed thickness and eliminating a part of or a whole part of the base film. Further, the method comprises, before the DLC film forming step, an insulating layer forming step for forming an insulating layer on the surface of the base film on which the diamond-like carbon film is to be formed.

Abstract: For address management of a nonvolatile memory, the whole logical address space is divided into logical address ranges (0 to 15), and the physical address space is divided into physical areas (segments (0 to 15)). The logical address ranges are respectively associated with the physical areas (segments) to manage the addresses. The sizes of the logical address ranges are equalized. The size of the physical area (segment (0)) corresponding to the logical address range (0) in which data of high rewrite frequency such as an FAT is expected to be stored is larger than those of the other physical areas, and the logical address ranges and the physical areas are allocated. Alternatively, the sizes of the physical areas are equalized, and the size of the logical address range (0) is set as a smaller one than those of the other logical address ranges. With this, the actual rewrite frequencies of the physical areas (segments) are equal to one another, and consequently the life of the nonvolatile memory can be prolonged.

Abstract: A SiNx film as a barrier film is provided. The film is formed at a low process temperature, has a high water vapor barrier performance and a high light transmittance, and is useful for sealing of a substrate formed by a flexible organic material, such as a plastic substrate. A barrier film is formed by silicon nitride (SiNx) having an atom ratio [N/(Si+N)] indicating a ratio of nitrogen N to silicon Si in the range of 0.60 to 0.65, by using a surface wave plasma chemical vapor deposition (CVD) device.

Abstract: A surface acoustic wave element includes a piezoelectric substrate made of a LiNbO3 or LiTaO3 single crystal, a base electrode layer disposed on the piezoelectric substrate and primarily including at least one of Ti and Cr, and an Al electrode layer primarily including Al disposed on the base electrode layer. The Al electrode layer is an epitaxially grown film with an orientation, and has a twin crystal structure exhibiting six-fold symmetry spots in an XRD pole figure. The average grain size of the Al electrode layer is about 60 nm or less.

Abstract: A composite coating device includes first to third processing chambers. The first processing chamber performs an ion beam etching as a pretreatment process in which an ion beam is irradiated on a surface of a magnetic head at a predetermined angle and the surface is removed for a predetermined depth. The second processing chamber performs a magnetron sputter deposition as a shock absorbing coating formation process in which a shock absorbing coating is formed on the pretreated surface. The third processing chamber performs an electron cyclotron resonance plasma chemical vapor epitaxy or a cathode arc discharge deposition as an overcoat formation process in which an overcoat is formed on the shock absorbing coating. A preparation chamber communicates with the first to third processing chambers through opening and closing devices for transferring the magnetic head.

Abstract: A host controller can divide a preliminary process for writing to a memory card, or the like, into a plurality of unit processes for execution. While writing or the like is being performed with respect to a memory card (card 1), a new-card preliminary division process of performing one unit process of the preliminary process with respect to a new memory card (card 2) is repeatedly executed. Thereby, the interrupt time of writing or the like due to the preliminary process of the card 2 is divided and distributed, so that each interrupt time division of writing or the like can be reduced.

Abstract: The present invention is intended to provide a DC-DC converter, in which the relationship between the duty ratio of a drive signal and the output DC voltage is nonlinear, being characterized in that the relationship between an error signal and the output DC voltage is linear, and that the design of stabilizing the feedback system is facilitated. The DC-DC converter comprises an error-amplifier circuit for generating the error signal that is obtained by amplifying the error between the output and a target value, an oscillating circuit for generating a triangular wave signal having an amplitude corresponding to the error signal, and a comparison circuit for comparing the triangular wave signal with a reference signal having a predetermined value and for generating the drive signal to turn ON/OFF a switching device.

Abstract: For downsizing a charge pump circuit which selects a voltage multiple ratio, converts its input voltage and outputs the converted voltage, the number of switching devices of the charge pump circuit is reduced. The control circuit of the charge pump circuit is configured to carry out switching control for multiple switching devices and charge/discharge at least a first capacitor and a second capacitor so as to have at least a 2Vi mode for alternately repeating a first state and a second state, and a 1.5Vi mode for alternately repeating a third state and a fourth state, thereby carrying out boosting depending on the detected input voltage.

Abstract: To provide a high-quality protection target by forming a protective film that is thin and excellent in corrosion resistance. Provided is a protective film forming method for forming a protective film at least on a surface of a protection target. The method comprises: a base film forming step for forming a base film on the surface of the protection target; and a DLC film forming step for forming a diamond-like carbon film on the base film. The base film forming step forms the base film on the surface of the protection target for a plurality of times by repeating a process of depositing the base film in a prescribed thickness and eliminating a part of or a whole part of the base film. Further, the method comprises, before the DLC film forming step, an insulating layer forming step for forming an insulating layer on the surface of the base film on which the diamond-like carbon film is to be formed.

Abstract: A host controller can divide a preliminary process for writing to a memory card, or the like, into a plurality of unit processes for execution. While writing or the like is being performed with respect to a memory card (card 1), a new-card preliminary division process of performing one unit process of the preliminary process with respect to a new memory card (card 2) is repeatedly executed. Thereby, the interrupt time of writing or the like due to the preliminary process of the card 2 is divided and distributed, so that each interrupt time division of writing or the like can be reduced.

Abstract: For address management of a nonvolatile memory, the whole logical address space is divided into logical address ranges (0 to 15), and the physical address space is divided into physical areas (segments (0 to 15)). The logical address ranges are respectively associated with the physical areas (segments) to manage the addresses. The sizes of the logical address ranges are equalized. The size of the physical area (segment (0)) corresponding to the logical address range (0) in which data of high rewrite frequency such as an FAT is expected to be stored is larger than those of the other physical areas, and the logical address ranges and the physical areas are allocated. Alternatively, the sizes of the physical areas are equalized, and the size of the logical address range (0) is set as a smaller one than those of the other logical address ranges. With this, the actual rewrite frequencies of the physical areas (segments) are equal to one another, and consequently the life of the nonvolatile memory can be prolonged.

Abstract: A film deposition device for depositing a film includes a depositing chamber for depositing the film with plasma. A plasma quantity monitoring device is disposed in the depositing chamber for monitoring a plasma quantity entering the depositing chamber at real time. A calculating device is electrically connected to the plasma quantity monitoring device for calculating a thickness of the film from the plasma quantity so that the thickness is monitored at real time.

Abstract: For downsizing a charge pump circuit which selects a voltage multiple ratio, converts its input voltage and outputs the converted voltage, the number of switching devices of the charge pump circuit is reduced. The control circuit of the charge pump circuit is configured to carry out switching control for multiple switching devices and charge/discharge at least a first capacitor and a second capacitor so as to have at least a 2Vi mode for alternately repeating a first state and a second state, and a 1.5Vi mode for alternately repeating a third state and a fourth state, thereby carrying out boosting depending on the detected input voltage.

Abstract: The present invention is intended to provide a DC-DC converter, in which the relationship between the duty ratio of a drive signal and the output DC voltage is nonlinear, being characterized in that the relationship between an error signal and the output DC voltage is linear, and that the design of stabilizing the feedback system is facilitated. The DC-DC converter comprises an error-amplifier circuit for generating the error signal that is obtained by amplifying the error between the output and a target value, an oscillating circuit for generating a triangular wave signal having an amplitude corresponding to the error signal, and a comparison circuit for comparing the triangular wave signal with a reference signal having a predetermined value and for generating the drive signal to turn ON/OFF a switching device.

Abstract: A compact-size driving voltage controller is provided which can be driven with low power. The compact-size driving voltage controller which can be driven with low power includes a High output operational amplifier and a Low output operational amplifier for supplying driving voltages VcomH, VcomL to a load such as a liquid crystal display panel, an output switch for alternating between the outputs of the operational amplifiers, a Low voltage setting operational amplifier for generating a set voltage to be supplied to the non-inverted input terminal of the Low output operational amplifier, a set voltage generator including a current mirror circuit and a clamping circuit, a bias current controller for controlling the bias current flowing in each operational amplifier with a predetermined timing, and a timing controller for controlling the changeover timing of the output switch.