Abstract: A magnetic sensor is provided with first and second magnetoresistive effect elements that can detect an external magnetic field. The first and second magnetoresistive effect elements are a plurality of layers of multilayer body including free layers where their magnetization directions vary due to the external magnetic field. Shapes of the first and second magnetoresistive effect elements viewed from the upper side in the lamination direction are different from each other. The first magnetoresistive effect element has a shape that can increase a slope of an output of the first magnetoresistive effect element relative to the change of the external magnetic field. The second magnetoresistive effect element has a shape that can decrease a slope of an output of the second magnetoresistive effect element relative to the change of the external magnetic field compared to the slope of the output of the first magnetoresistive effect element.

Abstract: A sensor system according to an embodiment of the disclosure includes a physical quantity distribution generation source configured to generate a distribution of a physical quantity, and a plurality of sensor packages including respective sensor chips configured to detect the physical quantity. In a plane including the sensor packages, central positions of the respective sensor chips are shifted in directions from central positions of the respective sensor packages toward a central position of the distribution of the physical quantity, and distances from the central position of the distribution of the physical quantity to the central positions of the respective sensor chips of the respective sensor packages are substantially equal to each other.

Abstract: A magnetic sensor is provided with first and second magnetoresistive effect elements that can detect an external magnetic field. The first and second magnetoresistive effect elements are a plurality of layers of multilayer body including free layers where their magnetization directions vary due to the external magnetic field. Shapes of the first and second magnetoresistive effect elements viewed from the upper side in the lamination direction are different from each other. The first magnetoresistive effect element has a shape that can increase a slope of an output of the first magnetoresistive effect element relative to the change of the external magnetic field. The second magnetoresistive effect element has a shape that can decrease a slope of an output of the second magnetoresistive effect element relative to the change of the external magnetic field compared to the slope of the output of the first magnetoresistive effect element.

Abstract: A magnetic sensor is provided with first and second magnetoresistive effect elements that can detect an external magnetic field. The first and second magnetoresistive effect elements are a plurality of layers of multilayer body including free layers where their magnetization directions vary due to the external magnetic field. Shapes of the first and second magnetoresistive effect elements viewed from the upper side in the lamination direction are different from each other. The first magnetoresistive effect element has a shape that can increase a slope of an output of the first magnetoresistive effect element relative to the change of the external magnetic field. The second magnetoresistive effect element has a shape that can decrease a slope of an output of the second magnetoresistive effect element relative to the change of the external magnetic field compared to the slope of the output of the first magnetoresistive effect element.

Abstract: A mixing container for mixing multiple materials comprises a container body in which multiple storage chambers are formed in a storage part by a partition wall that is a raised portion of a wall surface forming the storage part, and a lid member attached to the container body such that the multiple storage chambers are separately sealed; the partition wall is configured to be deformable into a concave part recessed in a movement direction of the partition wall through movement in a direction from the lid member toward the container body with a circumferential edge of the storage part sealed to the lid member; and when the partition wall is deformed into the concave part, the multiple storage chambers are deformed into one storage chamber.

Abstract: A sensor system according to an embodiment of the disclosure includes a physical quantity distribution generation source configured to generate a distribution of a physical quantity, and a plurality of sensor packages including respective sensor chips configured to detect the physical quantity. In a plane including the sensor packages, central positions of the respective sensor chips are shifted in directions from central positions of the respective sensor packages toward a central position of the distribution of the physical quantity, and distances from the central position of the distribution of the physical quantity to the central positions of the respective sensor chips of the respective sensor packages are substantially equal to each other.

Abstract: A magnetic sensor is provided with first and second magnetoresistive effect elements that can detect an external magnetic field. The first and second magnetoresistive effect elements are a plurality of layers of multilayer body including free layers where their magnetization directions vary due to the external magnetic field. Shapes of the first and second magnetoresistive effect elements viewed from the upper side in the lamination direction are different from each other. The first magnetoresistive effect element has a shape that can increase a slope of an output of the first magnetoresistive effect element relative to the change of the external magnetic field. The second magnetoresistive effect element has a shape that can decrease a slope of an output of the second magnetoresistive effect element relative to the change of the external magnetic field compared to the slope of the output of the first magnetoresistive effect element.

Abstract: A mixing container for mixing multiple materials comprises a container body in which multiple storage chambers are formed in a storage part by a partition wall that is a raised portion of a wall surface forming the storage part, and a lid member attached to the container body such that the multiple storage chambers are separately sealed; the partition wall is configured to be deformable into a concave part recessed in a movement direction of the partition wall through movement in a direction from the lid member toward the container body with a circumferential edge of the storage part sealed to the lid member; and when the partition wall is deformed into the concave part, the multiple storage chambers are deformed into one storage chamber.

Abstract: A magnetic sensor is provided with first and second magnetoresistive effect elements that can detect an external magnetic field. The first and second magnetoresistive effect elements are a plurality of layers of multilayer body including free layers where their magnetization directions vary due to the external magnetic field. Shapes of the first and second magnetoresistive effect elements viewed from the upper side in the lamination direction are different from each other. The first magnetoresistive effect element has a shape that can increase a slope of an output of the first magnetoresistive effect element relative to the change of the external magnetic field. The second magnetoresistive effect element has a shape that can decrease a slope of an output of the second magnetoresistive effect element relative to the change of the external magnetic field compared to the slope of the output of the first magnetoresistive effect element.

Abstract: A magnetic sensor is provided with first and second magnetoresistive effect elements that can detect an external magnetic field. The first and second magnetoresistive effect elements include at least magnetization direction change layers where a direction of magnetization is changed according to an external magnetic field. The width W1 of a magnetization direction change layer in an initial magnetization direction of the magnetization direction change layer of the first magnetoresistive effect element, and the width W2 of a magnetization direction change layer in an initial magnetization direction of the magnetization direction change layer of the second magnetoresistive effect element have a relationship shown by formula (1) below. Sensitivity of the first magnetoresistive effect element to the external magnetic field is higher than that of the second magnetoresistive effect element.

Abstract: A magnetic sensor is provided with first and second magnetoresistive effect elements that can detect an external magnetic field. The first and second magnetoresistive effect elements are a plurality of layers of multilayer body including free layers where their magnetization directions vary due to the external magnetic field. Shapes of the first and second magnetoresistive effect elements viewed from the upper side in the lamination direction are different from each other. The first magnetoresistive effect element has a shape that can increase a slope of an output of the first magnetoresistive effect element relative to the change of the external magnetic field. The second magnetoresistive effect element has a shape that can decrease a slope of an output of the second magnetoresistive effect element relative to the change of the external magnetic field compared to the slope of the output of the first magnetoresistive effect element.

Abstract: A magnetic sensor is provided with first and second magnetoresistive effect elements that can detect an external magnetic field. The first and second magnetoresistive effect elements include at least magnetization direction change layers where a direction of magnetization is changed according to an external magnetic field. The width W1 of a magnetization direction change layer in an initial magnetization direction of the magnetization direction change layer of the first magnetoresistive effect element, and the width W2 of a magnetization direction change layer in an initial magnetization direction of the magnetization direction change layer of the second magnetoresistive effect element have a relationship shown by formula (1) below. Sensitivity of the first magnetoresistive effect element to the external magnetic field is higher than that of the second magnetoresistive effect element.

Abstract: A magnetic sensor includes an MR element and a bias field generation unit. The MR element includes a magnetization pinned layer having a magnetization pinned in a direction parallel to an X direction, a free layer having a magnetization that varies depending on an X-direction component of an external magnetic field, and a nonmagnetic layer interposed between the magnetization pinned layer and the free layer. The magnetization pinned layer, the nonmagnetic layer and the free layer are stacked to be adjacent in a Y direction. The free layer receives an interlayer coupling magnetic field in a direction parallel to the X direction resulting from the magnetization pinned layer. The bias field generation unit applies a bias magnetic field to the free layer. The bias magnetic field includes a first component in a direction opposite to that of the interlayer coupling magnetic field and a second component in a Z direction.

Abstract: A magnetic sensor includes an MR element and a pair of magnets. The MR element includes a magnetization pinned layer having a magnetization pinned in a direction parallel to an X direction, a free layer having a magnetization that varies depending on an X-direction component of an external magnetic field, and a nonmagnetic layer interposed between the magnetization pinned layer and the free layer. The magnetization pinned layer, the nonmagnetic layer and the free layer are stacked to be adjacent in a Y direction. The free layer receives an interlayer coupling magnetic field in a direction parallel to the X direction resulting from the magnetization pinned layer. The pair of magnets applies a bias magnetic field to the free layer. The bias magnetic field includes a first component in a direction opposite to that of the interlayer coupling magnetic field and a second component in a Z direction.

Abstract: A magnetic sensor includes an MR element and a pair of magnets. The MR element includes a magnetization pinned layer having a magnetization pinned in a direction parallel to an X direction, a free layer having a magnetization that varies depending on an X-direction component of an external magnetic field, and a nonmagnetic layer interposed between the magnetization pinned layer and the free layer. The magnetization pinned layer, the nonmagnetic layer and the free layer are stacked to be adjacent in a Y direction. The free layer receives an interlayer coupling magnetic field in a direction parallel to the X direction resulting from the magnetization pinned layer. The pair of magnets applies a bias magnetic field to the free layer. The bias magnetic field includes a first component in a direction opposite to that of the interlayer coupling magnetic field and a second component in a Z direction.

Abstract: A magnetic sensor includes an MR element and a bias field generation unit. The MR element includes a magnetization pinned layer having a magnetization pinned in a direction parallel to an X direction, a free layer having a magnetization that varies depending on an X-direction component of an external magnetic field, and a nonmagnetic layer interposed between the magnetization pinned layer and the free layer. The magnetization pinned layer, the nonmagnetic layer and the free layer are stacked to be adjacent in a Y direction. The free layer receives an interlayer coupling magnetic field in a direction parallel to the X direction resulting from the magnetization pinned layer. The bias field generation unit applies a bias magnetic field to the free layer. The bias magnetic field includes a first component in a direction opposite to that of the interlayer coupling magnetic field and a second component in a Z direction.

Abstract: A method of forming a thin-film magnetic head comprises a lower magnetic pole layer forming step of forming a lower magnetic pole layer; a lower magnetic pole projection forming step of forming the lower magnetic pole layer with a lower magnetic pole projection; a gap layer forming step of laminating a nonmagnetic gap layer on the lower magnetic pole projection; and an upper magnetic pole forming step of forming an upper magnetic pole on the nonmagnetic gap layer. The lower magnetic pole projection forming step forms the lower magnetic pole projection by simultaneously etching an area including parts adjacent to a part to become the lower magnetic pole projection on both sides in a track width direction and a part adjacent to the part to become the lower magnetic pole projection on the side opposite from a medium-opposing surface in a surface of the lower magnetic pole layer.

Abstract: A multi-channel head includes a substrate, a plurality of write elements arranged in a track width direction above the substrate in a lamination direction, and a plurality of read elements arranged in the track width direction above the plurality of write elements in the lamination direction. At least one of the plurality of write elements is offset from the others in the lamination direction. All the plurality of read elements are located higher than an uppermost one of the plurality of write elements in the lamination direction.

Abstract: Provided is a multichannel thin-film magnetic head having a plurality of read head elements neighboring with each other, each of which includes shield layers having a desired stable magnetic-domain structure. The head comprises at least one read head part comprising a plurality of read head elements aligned in the track width direction, wherein each of the plurality of read head elements comprises a lower shield layer and an upper shield layer, and the at least one read head part comprises: a lower shield part comprising a plurality of the lower shield layers aligned in the track width direction; and an upper shield part comprising a plurality of the upper shield layers aligned in the track width direction, and wherein dummy shield layers are provided respectively on both sides of at least the lower shield part.

Abstract: Provided is a method for testing a head element that enables proper evaluation of the head element based on a characteristic of the head element under high-temperature and high-stress conditions. The testing method can be performed on a thin-film magnetic head including a head element and a heating element capable of applying a heat and stress to the head element, or performed on a row bar or a substrate wafer on which a plurality of the head elements and a plurality of the heating elements are disposed. The testing method comprises the steps of: causing the heating element to generate heat to apply a heat and stress to the head element; and measuring a characteristic of the head element under the heat and stress to evaluate the head element.