Abstract: Radio communication equipment performs radio communication with a first radio terminal group in a first period by using a frequency commonly for use by an adjacent base station, and with a second radio terminal group in a second period by using a frequency not commonly for use by the adjacent base station. The radio communication equipment includes a control unit to adjust time allocation of the first period and the second period; and a radio communication unit to perform radio communication with the first radio terminal group and the second radio terminal group according to the time allocation adjusted by the control unit.

Abstract: For transmitting a common channel signal with characteristics with an approximated non-directivity, the common channel signal for all users is divided into sub-channel signals, corresponding to a number of antenna elements composing an array antenna, to be concurrently transmitted with non-directivity by using each antenna element. Individual channel signals, for each user, following the common channel signal with a desired directivity by using the antenna elements. Each sub-channel signal can be made a sub-channel signal obtained by dividing all sub-channel components composing the common channel signal for each sub-channel component by a predetermined number or dividing them depending on a receiving quality of each antenna element.

Abstract: A disclosed base station transmits data at the same frequency used by neighboring base stations during a first time period, and transmits data at a different frequency from those used by the neighboring base stations during a second time period. The base station includes an antenna; and a transmitting unit configured to transmit a first known sequence from the antenna during the first time period and transmit a second known sequence from the antenna during the second time period.

Abstract: A self test device includes an operational element determining unit that calculates, based on operation parameters for the time of operation of a board on which a reconfigurable device is mounted, operational elements used in the devices of the board for the operation, and non-operational elements; an element assignment determining unit that assigns a self-test target from among the non-operational elements; and a testing unit that makes a test signal transmit through a test path that passes through the test target.

Abstract: A base station assigns a subcarrier for downlink communications under Orthogonal Frequency Division Multiple Access. Before downlink communications with a mobile station, based on carrier sensing by the mobile station, the base station detects information concerning an available subcarrier from downlink signals using a modulating unit. The information concerning the available subcarrier is stored in a downlink-information sharing unit and is shared among the base station and the adjacent base stations. A downlink subcarrier setting unit sets the available subcarrier for downlink communications.

Abstract: The radio transmission apparatus includes: a transmission buffer temporarily holds transmission data to be transmitted to a radio terminal through a downlink channel; a transmission parameter determiner determines a downlink transmission parameter relating to transmission quality of the downlink radio channel based on downlink channel quality information indicating reception quality of the downlink channel on the radio terminal; and a transmission parameter controller controls a transmission parameter determined by the transmission parameter determiner, based on at least the downlink channel quality information and information about an amount of downlink transmission data in the transmission buffer. This makes it possible to determine transmission parameters with consideration paid to a data amount accumulated in the transmission buffer in the radio transmission apparatus, so that a throughput from the radio transmission apparatus to the radio terminal is improved.

Abstract: The invention provides a plasma etching method that does not create any difference in profile between sparse and dense portions of the mask pattern in processing a device having a space width equal to or smaller than 100 nm. An added gas having a high C/F ratio such as C4F8 gas capable of increasing the generation of CF2 radicals that may become sidewall protection film components having a small attachment coefficient is added to the etching gas in order to form sidewall protection films on dense pattern portions, and in addition, Xe gas is added in order to suppress dissociation effect by lowering the electron temperature.

Abstract: A self test device includes an operational element determining unit that calculates, based on operation parameters for the time of operation of a board on which a reconfigurable device is mounted, operational elements used in the devices of the board for the operation, and non-operational elements; an element assignment determining unit that assigns a self-test target from among the non-operational elements; and a testing unit that makes a test signal transmit through a test path that passes through the test target.

Abstract: The invention provides a plasma processing apparatus capable of minimizing the non-uniformity of potential distribution around wafer circumference, and providing a uniform process across the wafer surface. The apparatus is equipped with a focus ring formed of a dielectric, a conductor or a semiconductor and having RF applied thereto, the design of which is optimized for processing based on a design technique clarifying physical conditions for flattening a sheath-plasma interface above a wafer and the sheath-plasma interface above the focus ring. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon.

Abstract: The invention provides a plasma processing apparatus capable of minimizing the non-uniformity of potential distribution around wafer circumference, and providing a uniform process across the wafer surface. The apparatus is equipped with a focus ring formed of a dielectric, a conductor or a semiconductor and having RF applied thereto, the design of which is optimized for processing based on a design technique clarifying physical conditions for flattening a sheath-plasma interface above a wafer and the sheath-plasma interface above the focus ring. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon.

Abstract: The invention provides a plasma processing apparatus capable of minimizing the non-uniformity of potential distribution around wafer circumference, and providing a uniform process across the wafer surface. The apparatus is equipped with a focus ring formed of a dielectric, a conductor or a semiconductor and having RF applied thereto, the design of which is optimized for processing based on a design technique clarifying physical conditions for flattening a sheath-plasma interface above a wafer and the sheath-plasma interface above the focus ring. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon.