Abstract: In a memory module according to an embodiment of the present disclosure, a controller, upon reception of a read command including a logical address, converts the logical address included in the read command into a physical address using address lookup information. The controller further inputs a first physical address, which is a portion of the physical address obtained by the conversion, to a non-volatile memory via a first address bus terminal, and then inputs a second physical address, which is a rest of the physical address obtained by the conversion, to the non-volatile memory via a second address bus terminal, to thereby read data corresponding to the physical address obtained by the conversion from the non-volatile memory.

Abstract: An object of the present disclosure is to provide a memory chip and a method of controlling a memory chip that make it possible to detect a disturb failure. The memory chip includes: a memory cell including a variable resistor element and a switching element, the variable resistor element reversibly changeable between a low resistive state and a high resistive state, and the switching element having nonlinear current-voltage characteristics and being coupled in series to the variable resistor element; a voltage generator that generates a first voltage to be applied to the memory cell in a case where the variable resistor element is changed to the low resistive state, a second voltage to be applied to the memory cell in a case where a resistive state of the variable resistor element is detected, and a specific voltage that is equal to or higher than a half of the first voltage and lower than the second voltage; and a control unit that controls the memory cell.

Abstract: In a circuit that selects a memory cell and applies a predetermined voltage to two ends of the memory cell, a withstand voltage and a maximum amplitude of a gate voltage are reduced. A memory control circuit includes a plurality of stages of memory decoders configured to select a specific cell of a memory according to a specified address and apply a predetermined voltage to two ends of the specific cell. At least one of the plurality of stages of the memory decoders includes the following four transistors. A first transistor and a second transistor are each provided according to a value to be written to the specific cell. A third transistor and a fourth transistor are provided to bring the specific cell into a non-selected state.

Abstract: A selector malfunction caused by a drift is prevented in a memory having a cross-point structure. A memory cell array is provided with a data area and a drift reference cell. An accumulated drift amount acquisition unit acquires an accumulated drift amount of the drift reference cell. A total drift amount reading unit reads a total drift amount stored in the data area. A refresh control unit adds the accumulated drift amount to the total drift amount to update the total drift amount as a new total drift amount. Further, the refresh control unit refreshes the data area of the memory cell array in a case where the new total drift amount exceeds a predetermined threshold value.

Abstract: In a memory unit according to an embodiment of the present disclosure, a memory cell array is configured, when, of a plurality of memory cells, multiple first memory cells whose corresponding fourth wiring line and first wiring line are different from one another are simultaneously accessed, to allow for simultaneous access to the multiple first memory cells, without allowing for simultaneous access to memory cells corresponding to the fourth wiring line shared by the first memory cells.

Abstract: A storage device according to the present disclosure includes: a plurality of first wiring lines extending in a first direction and including a plurality of first selection lines and a plurality of second selection lines; a plurality of second wiring lines extending in a second direction and including a plurality of third selection lines and a plurality of fourth selection lines, the second direction intersecting the first direction; a plurality of first memory cells; a first driver including a first selection line driver that drives the plurality of first selection lines on a basis of a first selection control signal and a second selection line driver that drives the plurality of second selection lines on a basis of the first selection control signal, the first and second selection line drivers being arranged side-by-side in the first direction; and a second driver including a third selection line driver that drives the plurality of third selection lines on a basis of a second selection control signal and a

Abstract: In a memory unit according to an embodiment of the present disclosure, a memory cell array is configured, when, of a plurality of memory cells, multiple first memory cells whose corresponding fourth wiring line and first wiring line are different from one another are simultaneously accessed, to allow for simultaneous access to the multiple first memory cells, without allowing for simultaneous access to memory cells corresponding to the fourth wiring line shared by the first memory cells.

Abstract: A storage device according to the present disclosure includes: a plurality of first wiring lines extending in a first direction and including a plurality of first selection lines and a plurality of second selection lines; a plurality of second wiring lines extending in a second direction and including a plurality of third selection lines and a plurality of fourth selection lines, the second direction intersecting the first direction; a plurality of first memory cells; a first driver including a first selection line driver that drives the plurality of first selection lines on a basis of a first selection control signal and a second selection line driver that drives the plurality of second selection lines on a basis of the first selection control signal, the first and second selection line drivers being arranged side-by-side in the first direction; and a second driver including a third selection line driver that drives the plurality of third selection lines on a basis of a second selection control signal and a

Abstract: To enable data to be transferred between a memory and a memory controller with accuracy. A memory-side interface circuit synchronizes a first periodic signal having a greater number of cycles than a number of pieces of unit data obtained by dividing read data read from a memory cell by a predetermined unit with the unit data and to sequentially transmit the first periodic signal and the unit data. A controller-side interface circuit sequentially holds the transmitted unit data in holding units of a plurality of stages in synchronization with the periodic signal and sequentially reads and outputs the held unit data in synchronization with a second periodic signal.

Abstract: Disclosed is an interface control circuit including an error detection unit, an error correction unit, and an adjustment control unit. The error detection unit is configured to detect whether an error occurs in error correction coded data transmitted via an interface. The error correction unit is configured to execute error correction processing of correcting the error when the error occurs. The adjustment control unit is configured to start adjustment processing of adjusting a transmission characteristic of the interface when the error occurs.

Abstract: Disclosed is an interface control circuit including an error detection unit, an error correction unit, and an adjustment control unit. The error detection unit is configured to detect whether an error occurs in error correction coded data transmitted via an interface. The error correction unit is configured to execute error correction processing of correcting the error when the error occurs. The adjustment control unit is configured to start adjustment processing of adjusting a transmission characteristic of the interface when the error occurs.

Abstract: The present invention provides a spread spectrum clock generator that is capable of preventing phase jumps and jitters and suppressing the occurrence of Electro Magnetic Interference components and that can easily be applied to large scale integrated circuits. The spread spectrum clock generator can be configured with a filter, quantizer, fractional divider, and other elements. Also, this clock generator circuitry can be configured by combination of a delta-sigma ?? quantizer and factional divider so that sine wave modulation and random number modulation can be realized. Thereby, control with digital values can be performed. This clock generator prevents precipitous phase variations in the output high frequency clock and makes fine phase control possible. Consequently, EMI reduction by 20-30 dB can be expected.

Abstract: A variable loop bandwidth phase locked loop in which, upon input of a succession of signals “1”, no modulated signal degradation occurs and even at a high symbol rate, the reference signal frequency remains low and the sampling frequencies of a phase-frequency detector and a sigma delta circuit remain low. The phase locked loop comprises: a first modulator which transforms baseband signal TX_DATA into an integer signal for specifying a division number and sends it to a control terminal of a programmable divider; a second modulator which shapes an incoming baseband signal into a prescribed signal waveform and sends it to a voltage controlled oscillator; and a variable current charge pump which changes the loop bandwidth of the phase locked loop according to control signal CUR.

Abstract: An object of this invention is to provide a phase synchronizing circuit capable of automatically adjusting a VCO such that the VCO satisfies a predetermined frequency range even in a frequency range in which the VCO oscillates by a leak current generated if a low threshold process is applied. The phase synchronizing circuit is composed of a PLL consisting of a phase comparator, a charge pump, a loop filter, a VCO, and a divider, and a calibration circuit for automatically adjusting a frequency range of the VCO. Before a convergence operation is started, a switch is closed in response to a signal Rst of the calibration circuit such that an output of the loop filter is leveled to the ground and the PLL is set to be an open loop. A VCO output Fo is set at an upper limit frequency or a lower limit frequency in response to a Vcal signal, and its frequency is measured by comparing its period with a period of a reference signal Fr, and signals Hb, Lb used for adjusting the frequency of the VCO are updated.

Abstract: The present invention provides a spread spectrum clock generator that is capable of preventing phase jumps and jitters and suppressing the occurrence of Electro Magnetic Interference components and that can easily be applied to large scale integrated circuits. The spread spectrum clock generator can be configured with a filter, quantizer, fractional divider, and other elements. Also, this clock generator circuitry can be configured by combination of a delta-sigma ?? quantizer and factional divider so that sine wave modulation and random number modulation can be realized. Thereby, control with digital values can be performed. This clock generator prevents precipitous phase variations in the output high frequency clock and makes fine phase control possible. Consequently, EMI reduction by 20-30 dB can be expected.

Abstract: A variable loop bandwidth phase locked loop in which, upon input of a succession of signals “1”, no modulated signal degradation occurs and even at a high symbol rate, the reference signal frequency remains low and the sampling frequencies of a phase-frequency detector and a sigma delta circuit remain low. The phase locked loop comprises: a first modulator which transforms baseband signal TX_DATA into an integer signal for specifying a division number and sends it to a control terminal of a programmable divider; a second modulator which shapes an incoming baseband signal into a prescribed signal waveform and sends it to a voltage controlled oscillator; and a variable current charge pump which changes the loop bandwidth of the phase locked loop according to control signal CUR.

Abstract: An object of this invention is to provide a phase synchronizing circuit capable of automatically adjusting a VCO such that the VCO satisfies a predetermined frequency range even in a frequency range in which the VCO oscillates by a leak current generated if a low threshold process is applied. The phase synchronizing circuit is composed of a PLL consisting of a phase comparator, a charge pump, a loop filter, a VCO, and a divider, and a calibration circuit for automatically adjusting a frequency range of the VCO. Before a convergence operation is started, a switch is closed in response to a signal Rst of the calibration circuit such that an output of the loop filter is leveled to the ground and the PLL is set to be an open loop. A VCO output Fo is set at an upper limit frequency or a lower limit frequency in response to a Vcal signal, and its frequency is measured by comparing its period with a period of a reference signal Fr, and signals Hb, Lb used for adjusting the frequency of the VCO are updated.