Abstract: Provided is a semiconductor device having high heat conductivity and high productivity. A semiconductor device includes an insulating substrate, a semiconductor element, a die-bond material, a joining material, and a cooler. The insulating substrate has an insulating ceramic, a first conductive plates disposed on one surface of the insulating ceramic, and a second conductive plate disposed on another surface of the insulating ceramic. The semiconductor element is disposed on the first conductive plate through the die-bond material. The die-bond material contains sintered metal. The semiconductor element has a bending strength degree of 700 MPa or more, and has a thickness of 0.05 mm or more and 0.1 mm or less. The cooler is joined to the second conductive plate through the joining material.

Abstract: Provided is a semiconductor device having high heat conductivity and high productivity. A semiconductor device includes an insulating substrate, a semiconductor element, a die-bond material, a joining material, and a cooler. The insulating substrate has an insulating ceramic, a first conductive plates disposed on one surface of the insulating ceramic, and a second conductive plate disposed on another surface of the insulating ceramic. The semiconductor element is disposed on the first conductive plate through the die-bond material. The die-bond material contains sintered metal. The semiconductor element has a bending strength degree of 700 MPa or more, and has a thickness of 0.05 mm or more and 0.1 mm or less. The cooler is joined to the second conductive plate through the joining material.

Abstract: A plurality of semiconductor elements for power control are formed on a semiconductor substrate. A stress relaxation resin layer covering a crossing region where band-shaped dicing areas dividing the semiconductor elements adjacent to each other cross is formed. The crossing region is diced to cut the stress relaxation resin layer to obtain the separate semiconductor elements. Accordingly, even with semiconductor elements produced with a compound semiconductor substrate of SiC or the like, a semiconductor device having high adhesive strength with a sealing resin and being less likely to cause cracking or peeling of the sealing resin due to thermal stress during an operation can be obtained.

Abstract: A plurality of semiconductor elements for power control are formed on a semiconductor substrate. A stress relaxation resin layer covering a crossing region where band-shaped dicing areas dividing the semiconductor elements adjacent to each other cross is formed. The crossing region is diced to cut the stress relaxation resin layer to obtain the separate semiconductor elements. Accordingly, even with semiconductor elements produced with a compound semiconductor substrate of SiC or the like, a semiconductor device having high adhesive strength with a sealing resin and being less likely to cause cracking or peeling of the sealing resin due to thermal stress during an operation can be obtained.

Abstract: A method for manufacturing an image display element including: a front panel; a back panel facing the front panel; plural pixels arranged in a matrix between the panels, and to be selected to be in a display or non-display state; and plural electrodes for controlling the pixels, the panels being bonded with the pixels and the electrodes interposed therebetween, and the electrodes being connected to a driving control circuit via metal wires, includes a first step of performing dicing from the back side of the opposing surface from the front panel, and forming a groove part such that electrode terminals connected to the electrodes are exposed between adjacent plural pixel lines, with the back panel bonded thereto, and a second step of forming the metal wires so as to be connected to the electrode terminals exposed at the groove part.

Abstract: An image display element includes: a front panel; a back panel opposite thereto; a plurality of pixels arranged between both the panels; and plural electrodes for controlling the pixels. The panels are bonded with the pixels and the electrodes interposed therebetween, and the electrodes are connected to a driving circuit via metal film wires. The back panel is divided so as to expose electrode terminals, and a groove part V-shaped in cross section is formed at the divided portion. The metal film wires are formed on the top surface of the back panel, and the electrode terminals and the metal film wires are connected by a conductive paste coated along the tilt surfaces forming the groove part. Partitions are disposed between the adjacent electrode terminals at the bottom of the groove part.

Abstract: An image display element includes: a front panel; a back panel opposite to the front panel; a plurality of pixels arranged in a matrix between both the panels, and to be selected to be in a display or non-display state; and plural electrodes for controlling the pixels. Both the panels are bonded together with the pixels and the electrodes interposed therebetween, and the electrodes are connected to a driving control circuit via metal wires. The back panel is divided such that electrode terminals connected to the electrodes are exposed between adjacent plural pixel lines, and a groove part having a shape wider at the top on the back side of the opposing surface from the front panel than at the bottom is formed at the divided portion. The metal wires are connected to the exposed electrode terminals of the groove part.

Abstract: An image display element includes: a front panel; a back panel opposite thereto; a plurality of pixels arranged in a matrix between both the panels; and plural electrodes for controlling the pixels. Both the panels are bonded together with the pixels and the electrodes interposed therebetween, and the electrodes are connected to a driving circuit via metal film wires. Division is performed so as to expose electrode terminals, and a groove part V-shaped in cross section is formed at the divided portion. The metal film wires are formed on the surface of the top of the back panel, and the electrode terminals and the metal film wires are connected by a conductive paste coated along the tilt surfaces forming the groove part.

Abstract: A method for manufacturing an image display element including: a front panel; a back panel facing the front panel; plural pixels arranged in a matrix between the panels, and to be selected to be in a display or non-display state; and plural electrodes for controlling the pixels, the panels being bonded with the pixels and the electrodes interposed therebetween, and the electrodes being connected to a driving control circuit via metal wires, includes a first step of performing dicing from the back side of the opposing surface from the front panel, and forming a groove part such that electrode terminals connected to the electrodes are exposed between adjacent plural pixel lines, with the back panel bonded thereto, and a second step of forming the metal wires so as to be connected to the electrode terminals exposed at the groove part.

Abstract: A method for manufacturing an image display element including: a front panel; a back panel facing the front panel; plural pixels arranged in a matrix between the panels, and to be selected to be in a display or non-display state; and plural electrodes for controlling the pixels, the panels being bonded with the pixels and the electrodes interposed therebetween, and the electrodes being connected to a driving control circuit via metal wires, includes a first step of performing dicing from the back side of the opposing surface from the front panel, and forming a groove part such that electrode terminals connected to the electrodes are exposed between adjacent plural pixel lines, with the back panel bonded thereto, and a second step of forming the metal wires so as to be connected to the electrode terminals exposed at the groove part.

Abstract: An image display element includes: a front panel; a back panel opposite thereto; plural pixels arranged in a matrix between the panels; and plural electrodes for controlling the pixels. The panels are bonded with the pixels and the electrodes interposed therebetween. The electrodes are connected to a driving circuit via metal film wires. The back panel is divided so as to expose electrode terminals, and a groove part V-shaped in cross section is formed at the divided portion. The metal film wires are formed on the top surface of the back panel, and the electrode terminals and the metal film wires are connected by a conductive paste coated along the tilt surfaces forming the groove part. A contact resistance reducing means is disposed at the connection part interface between the electrode terminal and the conductive paste.

Abstract: An image display element includes: a front panel; a back panel opposite thereto; plural pixels arranged in a matrix between the panels; and plural electrodes for controlling the pixels. The panels are bonded with the pixels and the electrodes interposed therebetween. The electrodes are connected to a driving circuit via metal film wires. The back panel is divided so as to expose electrode terminals, and a groove part V-shaped in cross section is formed at the divided portion. The metal film wires are formed on the top surface of the back panel, and the electrode terminals and the metal film wires are connected by a conductive paste coated along the tilt surfaces forming the groove part. A contact resistance reducing means is disposed at the connection part interface between the electrode terminal and the conductive paste.

Abstract: An image display element includes: a front panel; a back panel opposite thereto; a plurality of pixels arranged between both the panels; and plural electrodes for controlling the pixels. The panels are bonded with the pixels and the electrodes interposed therebetween, and the electrodes are connected to a driving circuit via metal film wires. The back panel is divided so as to expose electrode terminals, and a groove part V-shaped in cross section is formed at the divided portion. The metal film wires are formed on the top surface of the back panel, and the electrode terminals and the metal film wires are connected by a conductive paste coated along the tilt surfaces forming the groove part. Partitions are disposed between the adjacent electrode terminals at the bottom of the groove part.

Abstract: An image display element includes: a front panel; a back panel opposite thereto; a plurality of pixels arranged in a matrix between both the panels; and plural electrodes for controlling the pixels. Both the panels are bonded together with the pixels and the electrodes interposed therebetween, and the electrodes are connected to a driving circuit via metal film wires. Division is performed so as to expose electrode terminals, and a groove part V-shaped in cross section is formed at the divided portion. The metal film wires are formed on the surface of the top of the back panel, and the electrode terminals and the metal film wires are connected by a conductive paste coated along the tilt surfaces forming the groove part.

Abstract: A method for manufacturing an image display element including: a front panel; a back panel facing the front panel; plural pixels arranged in a matrix between the panels, and to be selected to be in a display or non-display state; and plural electrodes for controlling the pixels, the panels being bonded with the pixels and the electrodes interposed therebetween, and the electrodes being connected to a driving control circuit via metal wires, includes a first step of performing dicing from the back side of the opposing surface from the front panel, and forming a groove part such that electrode terminals connected to the electrodes are exposed between adjacent plural pixel lines, with the back panel bonded thereto, and a second step of forming the metal wires so as to be connected to the electrode terminals exposed at the groove part.

Abstract: An image display element includes: a front panel; a back panel opposite to the front panel; a plurality of pixels arranged in a matrix between both the panels, and to be selected to be in a display or non-display state; and plural electrodes for controlling the pixels. Both the panels are bonded together with the pixels and the electrodes interposed therebetween, and the electrodes are connected to a driving control circuit via metal wires. The back panel is divided such that electrode terminals connected to the electrodes are exposed between adjacent plural pixel lines, and a groove part having a shape wider at the top on the back side of the opposing surface from the front panel than at the bottom is formed at the divided portion. The metal wires are connected to the exposed electrode terminals of the groove part.

Abstract: A nitride semiconductor device and its manufacturing method are provided which are capable of achieving low-resistance ohmic properties and high adhesion. A nitride semiconductor device has an n-type GaN substrate over which a semiconductor element is formed and an n-electrode as a metal electrode formed over the back surface of the GaN substrate. A surface denatured layer functioning as a carrier supply layer is provided between the GaN substrate and the n-electrode. The surface denatured layer is formed by denaturing the back surface of the GaN substrate by causing it to react with a material that contains silicon.

Abstract: In a signal processing apparatus for transmitting or processing a signal, a substrate has a recessed portion in a surface of the substrate, a first interconnecting conductor is on the substrate, including at least the recessed portion of the substrate, and a dielectric support film is on the substrate opposite the recessed portion of the substrate with an air space between the dielectric support film and the substrate. A second interconnecting conductor is on a part of a surface of the dielectric support film. The apparatus has a simple structure and reduced transmission loss and can be made in a simple manufacturing process.

Abstract: A nitride semiconductor device and its manufacturing method are provided which are capable of achieving low-resistance ohmic properties and high adhesion. A nitride semiconductor device has an n-type GaN substrate over which a semiconductor element is formed and an n-electrode as a metal electrode formed over the back surface of the GaN substrate. A surface denatured layer functioning as a carrier supply layer is provided between the GaN substrate and the n-electrode. The surface denatured layer is formed by denaturing the back surface of the GaN substrate by causing it to react with a material that contains silicon.

Abstract: In a signal processing apparatus for transmitting or processing a signal, a substrate has a recessed portion in a surface of the substrate, a first interconnecting conductor is on the substrate, including at least the recessed portion of the substrate, and a dielectric support film is on the substrate opposite the recessed portion of the substrate with an air space sand between the dielectric support film and the substrate. A second interconnecting conductor is on a part of a surface of the dielectric support film. The apparatus has a simple structure and reduced transmission loss and can be made in a simple manufacturing process.