Patents by Inventor Yoshizi Kobayasi

Yoshizi Kobayasi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4920401
    Abstract: In a bipolar transistor, around the border line of the surface of a base region formed on a semiconductor substrate is formed a base electrode having a constant width of less than one micron and made of polycrystalline silicon. An island shaped emitter region is formed in the base region and an emitter electrode is formed on the surface of the emitter region. The emitter electrode is electrically isolated from the base electrode by an insulating film extending between the periphery of the emitter region and the base electrode.
    Type: Grant
    Filed: March 14, 1985
    Date of Patent: April 24, 1990
    Assignee: Nippon Telegraph & Telephone Public Corp.
    Inventors: Tetsushi Sakai, Yoshizi Kobayasi, Hironori Yamauchi, Yoshinobu Arita
  • Patent number: 4531282
    Abstract: In a bipolar transistor, around the border line of the surface of a base region formed on a semiconductor substrate is formed a base electrode having a constant width of less than one micron and made of polycrystalline silicon. An island shaped emitter region is formed in the base region and an emitter electrode is formed on the surface of the emitter region. The emitter electrode is electrically isolated from the base electrode by an insulating film extending between the periphery of the emitter region and the base electrode.
    Type: Grant
    Filed: January 17, 1984
    Date of Patent: July 30, 1985
    Assignee: Nippon Telegraph and Telephone Public Corp.
    Inventors: Tetsushi Sakai, Yoshizi Kobayasi, Hironori Yamauchi, Yoshinobu Arita