Abstract: The present invention provides a switching device capable of further minimizing the ON resistance of a switching element. Switching element has hole injecting unit that includes injecting electrode which is directly connected to semiconductor substrate. Injection driving unit of driving unit is connected to injecting electrode and source electrode of switching element, and applies an injection voltage Vin between injecting electrode and source electrode. Injection driving unit injects holes from hole injecting unit to a hetero-junction interface of semiconductor substrate, by applying the injection voltage Vin exceeding a threshold value to switching element. Because the injected holes pull the equivalent amount of electrons to the hetero-junction interface, concentration of the 2-dimensional electron gas as the channel region becomes high, and the ON resistance of switching element 10 becomes small.

Abstract: The present invention provides a switching device capable of further minimizing the ON resistance of a switching element. Switching element has hole injecting unit that includes injecting electrode which is directly connected to semiconductor substrate. Injection driving unit of driving unit is connected to injecting electrode and source electrode of switching element, and applies an injection voltage Vin between injecting electrode and source electrode. Injection driving unit injects holes from hole injecting unit to a hetero-junction interface of semiconductor substrate, by applying the injection voltage Vin exceeding a threshold value to switching element. Because the injected holes pull the equivalent amount of electrons to the hetero-junction interface, concentration of the 2-dimensional electron gas as the channel region becomes high, and the ON resistance of switching element 10 becomes small.

Abstract: The present invention provides a switching device capable of further minimizing the ON resistance of a switching element. Switching element has field application electrode that is connected to semiconductor substrate with insulating film interposed therebetween. Field control unit of driving unit is connected to field application electrode and source electrode of switching element, and applies a bias voltage Ve between field application electrode and source electrode. Field control unit applies an electric field from field application electrode to a hetero-junction interface of semiconductor substrate, by applying the bias voltage Ve exceeding a threshold value to switching element. In short, in the ON state of switching element, the electric field that is applied from field application electrode to semiconductor substrate works to increase electron concentration in a channel region by a field effect and decrease the ON resistance of switching element.