Patents by Inventor Yosikazu Takita

Yosikazu Takita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thyristor device
    Patent number: 4236169
    Abstract: A semiconductor substrate comprises at the central portion a diode region which includes a P-type base layer, an N-type low impurity concentration layer and an N-type base layer and at the outer peripheral portion a thyristor region which includes an N-type emitter layer, a P-type base layer, an N-type low impurity concentration layer, an N-type base layer and a P-type emitter layer. The P-type base layer and the N-type emitter layer are in contact with a cathode electrode, the N-type base layer and the P-type emitter layer are in contact with an anode electrode, and the diode and thyristor regions are connected in anti-parallel. Contiguous to the outer periphery of the N-type base layer interposed between the N-type low impurity concentration layer and the P-type emitter layer is formed an N-type high impurity concentration region higher in impurity concentration than the N-type base layer.
    Type: Grant
    Filed: June 19, 1979
    Date of Patent: November 25, 1980
    Assignee: Hitachi, Ltd.
    Inventors: Yoichi Nakashima, Yosikazu Takita, Sousi Suzuki, Katsumi Akabane, Michihiro Misawa