Abstract: A method for forming a silicon oxide film, containing: a provision step of providing a substrate in a reactor; a first introduction step of introducing, into the reactor, at least one silicon compound represented by Formula (1); a first purge step of purging the reactor with purge gas; a second introduction step of introducing an oxygen source into the reactor; and a second purge step of purging the reactor with the purge gas, in which the first introduction step, the first purge step, the second introduction step, and the second purge step are performed at a temperature of 650° C. or more and 800° C. or less and a pressure of 7.6 Pa or more and 100 kPa or less.

Abstract: A method for forming a silicon oxide film, containing: a provision step of providing a substrate in a reactor; a first introduction step of introducing, into the reactor, at least one silicon compound represented by Formula (1); a first purge step of purging the reactor with purge gas; a second introduction step of introducing an oxygen source into the reactor; and a second purge step of purging the reactor with the purge gas, in which the first introduction step, the first purge step, the second introduction step, and the second purge step are performed at a temperature of 650° C. or more and 800° C. or less and a pressure of 7.6 Pa or more and 100 kPa or less.