Abstract: A capacitor includes a silicon substrate, a first terminal, a dielectric layer, a conductive portion, and a second terminal. The silicon substrate has a principal surface and a porous part. The principal surface includes an opening region and a non-opening region other than the opening region. The porous part has an opening in the opening region. The first terminal is electrically connected to the silicon substrate. The dielectric layer is formed on an inner surface of the porous part. The conductive portion is filled, on the dielectric layer, in the porous part. The second terminal is electrically connected to the conductive portion. At least one of the first terminal or the second terminal overlaps at least part of the porous part in the normal direction of the principal surface.

Abstract: A capacitor includes a silicon substrate, a conductor layer, and a dielectric layer. The silicon substrate has a principal surface including a capacitance generation region and a non-capacitance generation region. The silicon substrate includes a porous part provided in a thickness direction in the capacitance generation region. The conductor layer includes a surface layer part at least covering part of a surface of the capacitance generation region and a filling part filled in at least part of the porous part. The dielectric layer is provided between an inner surface of the porous part and the filling part. The porous part includes a macroporous part having macro pores and a nanoporous part formed in at least part of inner surfaces of the macro pores and having nano pores smaller than the macro pores.

Abstract: A capacitor includes a silicon substrate, a conductor layer, and a dielectric layer. The silicon substrate has a principal surface including a capacitance generation region and a non-capacitance generation region. The silicon substrate has a porous part provided in a thickness direction in the capacitance generation region. The conductor layer has a surface layer part at least covering part of a surface of the capacitance generation region and a filling part filled in at least part of fine pores of the porous part. The dielectric layer is provided between an inner surface of the fine pores and the filling part.

Abstract: A capacitor includes a silicon substrate, a conductor layer, and a dielectric layer. The silicon substrate has a principal surface including a capacitance generation region and a non-capacitance generation region. The silicon substrate includes a porous part provided in a thickness direction in the capacitance generation region. The conductor layer includes a surface layer part at least covering part of a surface of the capacitance generation region and a filling part filled in at least part of the porous part. The dielectric layer is provided between an inner surface of the porous part and the filling part. The porous part includes a macroporous part having macro pores and a nanoporous part formed in at least part of inner surfaces of the macro pores and having nano pores smaller than the macro pores.

Abstract: A capacitor includes a silicon substrate, a conductor layer, and a dielectric layer. The silicon substrate has a principal surface including a capacitance generation region and a non-capacitance generation region. The silicon substrate has a porous part provided in a thickness direction in the capacitance generation region. The conductor layer has a surface layer part at least covering part of a surface of the capacitance generation region and a filling part filled in at least part of fine pores of the porous part. The dielectric layer is provided between an inner surface of the fine pores and the filling part.

Abstract: The disclosure has a configuration including: a supporting substrate having a cavity; at least one bridge section extending directly above the cavity and having at least one end supported by the supporting substrate and an other end; and a thermopile wiring formed in the bridge section and including hot junctions in the bridge section and cold junctions directly above the supporting substrate, the hot junctions being connected to the cold junctions. The bridge section is provided with: at least one breakage detection wiring for detecting breakage of the bridge section; and at least one heater wiring. The breakage detection wiring is wired along the thermopile wiring. The heater wiring is wired such that part of the heater wiring is in an area between the other end of the bridge section and the hot junctions.

Abstract: The disclosure has a configuration including: a supporting substrate having a cavity; at least one bridge section extending directly above the cavity and having at least one end supported by the supporting substrate and an other end; and a thermopile wiring formed in the bridge section and including hot junctions in the bridge section and cold junctions directly above the supporting substrate, the hot junctions being connected to the cold junctions. The bridge section is provided with: at least one breakage detection wiring for detecting breakage of the bridge section; and at least one heater wiring. The breakage detection wiring is wired along the thermopile wiring. The heater wiring is wired such that part of the heater wiring is in an area between the other end of the bridge section and the hot junctions.

Abstract: Infrared sensor as an aspect of the present disclosure includes substrate, processor disposed on substrate, infrared sensing element disposed above processor, package that is disposed on substrate and covers infrared sensing element, and heat insulating section disposed between infrared sensing element and processor at an overlapped region of processor and infrared sensing element. Heat insulating section has a thermal conductivity smaller than substrate.

Abstract: An infrared sensor, which achieves a low manufacturing cost, or has high sensitivity, or in which an increase in heat capacity is reduced, is provided. The infrared sensor includes a first infrared absorbing portion, an infrared sensing portion for sensing infrared rays based on infrared rays absorbed by the first infrared absorbing portion, and a plurality of protrusions including metal and disposed apart from each other on a surface of the first infrared absorbing portion. Since an absorption rate of infrared rays is improved, sensitivity can be improved, or an increase in heat capacity can be reduced.

Abstract: A detection device is used with a vehicle including a cabin, a ceiling, pillars, a driver seat, and a passenger seat. The detection device includes a detector disposed on the ceiling or the pillars of the vehicle and detecting an object in the cabin while not contacting the object, and a scanning unit that moves the detector for scan. The detection device can detect a temperature of the object accurately, and control air-conditioning comfortably to the object.

Abstract: An infrared sensor, which achieves a low manufacturing cost, or has high sensitivity, or in which an increase in heat capacity is reduced, is provided. The infrared sensor includes a first infrared absorbing portion, an infrared sensing portion for sensing infrared rays based on infrared rays absorbed by the first infrared absorbing portion, and a plurality of protrusions including metal and disposed apart from each other on a surface of the first infrared absorbing portion. Since an absorption rate of infrared rays is improved, sensitivity can be improved, or an increase in heat capacity can be reduced.

Abstract: The infrared sensor (1) includes a base (10), and an infrared detection element (3) formed over a surface of the base (10). The infrared detection element (3) comprises an infrared absorption member (33) in the form of a thin film configured to absorb infrared, and a temperature detection member (30) configured to measure a temperature difference between the infrared absorption member (33) and the base (10). The temperature detection member (30) includes a p-type polysilicon layer (35) formed over the infrared absorption member (33) and the base (10), an n-type polysilicon layer (34) formed over the infrared absorption member (33) and the base (10) without contact with the p-type polysilicon layer (33), and a connection layer (36) configured to electrically connect the p-type polysilicon layer (35) to the n-type polysilicon layer (34). Each of the p-type polysilicon layer (35) and the n-type polysilicon layer (34) has an impurity concentration in a range of 1018 to 1020 cm?3.

Abstract: The infrared sensor (1) includes a base (10), and an infrared detection element (3) formed over a surface of the base (10). The infrared detection element (3) comprises an infrared absorption member (33) in the form of a thin film configured to absorb infrared, and a temperature detection member (30) configured to measure a temperature difference between the infrared absorption member (33) and the base (10). The temperature detection member (30) includes a p-type polysilicon layer (35) formed over the infrared absorption member (33) and the base (10), an n-type polysilicon layer (34) formed over the infrared absorption member (33) and the base (10) without contact with the p-type polysilicon layer (33), and a connection layer (36) configured to electrically connect the p-type polysilicon layer (35) to the n-type polysilicon layer (34). Each of the p-type polysilicon layer (35) and the n-type polysilicon layer (34) has an impurity concentration in a range of 1018 to 1020 cm?3.

Abstract: The infrared sensor (1) includes a base (10), and an infrared detection element (3) formed over a surface of the base (10). The infrared detection element (3) includes an infrared absorption member (33) in the form of a thin film configured to absorb infrared, a temperature detection member (30) configured to measure a temperature difference between the infrared absorption member (33) and the base (10), and a safeguard film (39). The infrared element (3) is spaced from the surface of the base (10) for thermal insulation. The temperature detection member (30) includes a p-type polysilicon layer (35) formed over the infrared absorption member (33) and the base (10), an n-type polysilicon layer (34) formed over the infrared absorption member (33) and the base (10) without contact with the p-type polysilicon layer (35), and a connection layer (36) configured to electrically connect the p-type polysilicon layer (35) to the n-type polysilicon layer (34).

Abstract: A micro relay includes a magnetic member and a permanent magnet in addition to a main substrate, a stationary contact, an armature and a coil. The magnetic member includes a core located in a first though hole of the main substrate. The permanent magnet is located at an end of the magnetic member or at a place within the magnetic member. The main substrate has a plurality of laminated layers. The coil is formed of a plurality of planer coils connected in series. The plurality of planer coils are formed on the plurality of laminated layers, respectively and are located around the core.

Abstract: An improved light responsive semiconductor switch with shorted load protection capable of successfully interrupting a load overcurrent. The switch is includes an output transistor which is triggered by a photovoltaic element to connect a load to a power source thereof, and an overcurrent sensor which provides an overcurrent signal upon seeing an overcurrent condition in the load. A shunt transistor is connected in series with a current limiting resistive element across the photovoltaic element to define a shunt path of flowing the current from the photovoltaic element through the current limiting resistive element away from the output transistor. A latch circuit is included to be energized by the photovoltaic element and to provide an interruption signal once the overcurrent signal is received and hold the interruption signal.