Abstract: An image forming apparatus configured to form an image on a recording material includes an apparatus body including at least a first frame body and a second frame body which are disposed in a vertical direction, a first electrical member disposed in the first frame body and configured to operate physically based on electrical control, a second electrical member disposed in the second frame body and configured to operate physically based on electrical control, a first control board disposed in the first frame body, connected to the first electrical member, and configured to control the first electrical member, and a second control board disposed in the second frame body, connected to the second electrical member, and configured to control the second electrical member.

Abstract: An image forming system includes an image forming apparatus configured to form an image on a sheet, and a static eliminator having a charge eliminating component configured to neutralize a sheet having an image formed by the image forming apparatus. The static eliminator includes a first setting unit configured to set a voltage to be applied to the charge eliminating component. The image forming apparatus includes a second setting unit configured to set a voltage to be applied to the charge eliminating component. The image forming system includes a third setting unit configured to set which voltage is applied as a voltage to be applied to the charge eliminating component, the voltage set by the first setting unit or the voltage set by the second setting unit.

Abstract: An image processing apparatus includes a first direct current power supply configured to output a first voltage; a second direct current power supply configured to output a second voltage that is higher than the first voltage; a resistor circuit section including at least one heat generation resistor configured to heat inside of the image processing apparatus; and a control unit configured to switch a power supply to supply the resistor circuit section with power between the first direct current power supply and the second direct current power supply.

Abstract: There is provided an image-processing apparatus including: one or more heaters; a power supply unit including at least one direct current power supply, the power supply unit being configured to operate in one of a plurality of operation states having respective different total consumed powers; one or more drive circuits configured to drive the one or more heaters, respectively, using power supplied from the at least one direct current power supply; and a controller configured to control, on the basis of a driving state of the one or more heaters, the power supply unit to operate in an operation state selected such that a surplus of the total consumed power is reduced.

Abstract: The present disclosure provides a nitride semiconductor device. The nitride semiconductor device includes: an electron transport layer, made of a nitride semiconductor; an electron supply layer, disposed on the electron transport layer and made of a nitride semiconductor having a band gap greater than a band gap of the nitride semiconductor of the electron transport layer; a first protective layer, disposed on the electron supply layer and made of a nitride semiconductor having a band gap less than the band gap of the nitride semiconductor of the electron supply layer; a second protective layer, disposed on a portion of the first protective layer and made of a nitride semiconductor having a band gap greater than the band gap of the nitride semiconductor of the first protective layer; and a gate layer, disposed on the second protective layer.

Abstract: The present disclosure provides a nitride semiconductor device. The nitride semiconductor device includes: an electron travelling layer; an electron supply layer; a gate layer, formed on the electron supply layer; a gate electrode, formed on the gate layer; and a passivation layer, having a source opening and a drain opening. The electron travelling layer includes: a first portion, located under the gate layer; and a second portion, located between the gate layer and the source opening, and located between the gate layer and the drain opening. The electron supply layer includes: a first electron supply layer, formed on the first portion and located below the gate layer; and a second electron supply layer, formed on the second portion and connected to the first electron supply layer.

Abstract: A nitride semiconductor device includes a channel layer, a barrier layer made of AlxInyGa1-x-yN (x>0, x+y?1), an active region that has a layered structure including the channel layer and the barrier layer, an inactive region that is formed at the layered structure around the active region and that is a concave portion having a bottom portion that reaches the channel layer, a gate layer made of a nitride semiconductor selectively formed on the barrier layer in the active region, a gate electrode formed on the gate layer, a first insulating film that covers the gate electrode and that is in contact with the barrier layer in the active region, and a second insulating film that covers the first insulating film and that is in contact with the inactive region.

Abstract: A nitride semiconductor device includes a channel layer, a barrier layer made of AlxInyGa1-x-yN (x>0, x+y?1), an active region that has a layered structure including the channel layer and the barrier layer, an inactive region that is formed at the layered structure around the active region and that is a concave portion having a bottom portion that reaches the channel layer, a gate layer made of a nitride semiconductor selectively formed on the barrier layer in the active region, a gate electrode formed on the gate layer, a first insulating film that covers the gate electrode and that is in contact with the barrier layer in the active region, and a second insulating film that covers the first insulating film and that is in contact with the inactive region.

Abstract: An image forming apparatus includes a first power cord configured to supply a first power, a second power cord configured to supply a second power, a first monitor configured to monitor a supply state of the first power, a second monitor configured to monitor a supply state of the second power, a load to which either the first power or the second power can be supplied, a controller configured to control an operation of the load, and a switcher configured to be switched between a first state in which the first power is supplied to the controller and a second state in which the second power is supplied to the controller.

Abstract: A nitride semiconductor device includes an electron transit layer composed of a nitride semiconductor, an electron supply layer formed on the electron transit layer and composed of a nitride semiconductor having a band gap that is larger than that of the electron transit layer, a gate layer formed on the electron supply layer and composed of a nitride semiconductor including an acceptor impurity, a gate electrode formed on the gate layer, and a source electrode and a drain electrode that are formed on the electron supply layer. The gate layer includes an upper surface in contact with the gate electrode. The upper surface is a Ga-polar surface.

Abstract: An image forming apparatus includes a connector, a conveyance unit, and a controller. The conveyance unit includes first and second sensors, first and second light sources, and a capacitor. Based on the first and second sensors, the controller determines a position of a paper jam having occurred during an image formation job. The first light source is turned-on when the position of the paper jam corresponds to a position of the first sensor and the second light source is turned-on when the position of the paper jam corresponds to a position of the second sensor. When the conveyance unit is pulled out of the image forming apparatus, the connector shuts off the electrical connection between the conveyance unit and a power source, and a light source controlled to turn on by the controller glows based on electric power accumulated in the capacitor during the image formation job.

Abstract: A developing device includes a developer carrying member configured to carry a developer, containing toner and a carrier, for developing an electrostatic latent image formed on an image bearing member, a developer container configured to accommodate the developer, and an oscillation circuit including a resonance circuit including a coil and a circuit portion containing a capacitor and configured to oscillate a signal for detecting a toner concentration of the developer accommodated in the developer container. The coil is formed integrally with the developer container by a metal film, and the coil is disposed on an inner wall surface of the developer container.

Abstract: A nitride semiconductor device includes a channel layer, a barrier layer made of AlxInyGa1-x-yN(x>0, x+y?1), an active region that has a layered structure including the channel layer and the barrier layer, an inactive region that is formed at the layered structure around the active region and that is a concave portion having a bottom portion that reaches the channel layer, a gate layer made of a nitride semiconductor selectively formed on the barrier layer in the active region, a gate electrode formed on the gate layer, a first insulating film that covers the gate electrode and that is in contact with the barrier layer in the active region, and a second insulating film that covers the first insulating film and that is in contact with the inactive region.

Abstract: An image forming apparatus includes a connector, a conveyance unit, and a controller. The conveyance unit includes first and second sensors, first and second light sources, and a capacitor. Based on the first and second sensors, the controller determines a position of a paper jam having occurred during an image formation job. The first light source is turned-on when the position of the paper jam corresponds to a position of the first sensor and the second light source is turned-on when the position of the paper jam corresponds to a position of the second sensor. When the conveyance unit is pulled out of the image forming apparatus, the connector shuts off the electrical connection between the conveyance unit and a power source, and a light source controlled to turn on by the controller glows based on electric power accumulated in the capacitor during the image formation job.

Abstract: A nitride semiconductor device includes a channel layer, a barrier layer made of AlxInyGa1-x-yN (x>0, x+y?1), an active region that has a layered structure including the channel layer and the barrier layer, an inactive region that is formed at the layered structure around the active region and that is a concave portion having a bottom portion that reaches the channel layer, a gate layer made of a nitride semiconductor selectively formed on the barrier layer in the active region, a gate electrode formed on the gate layer, a first insulating film that covers the gate electrode and that is in contact with the barrier layer in the active region, and a second insulating film that covers the first insulating film and that is in contact with the inactive region.

Abstract: The present disclosure provides a nitride semiconductor device. The nitride semiconductor device includes: an electron transport layer, made of a nitride semiconductor; an electron supply layer, disposed on the electron transport layer and made of a nitride semiconductor having a band gap greater than a band gap of the nitride semiconductor of the electron transport layer; a first protective layer, disposed on the electron supply layer and made of a nitride semiconductor having a band gap less than the band gap of the nitride semiconductor of the electron supply layer; a second protective layer, disposed on a portion of the first protective layer and made of a nitride semiconductor having a band gap greater than the band gap of the nitride semiconductor of the first protective layer; and a gate layer, disposed on the second protective layer.

Abstract: A developing device includes a developer carrying member for carrying a developer, containing toner and a carrier, for developing an electrostatic latent image formed on an image bearing member; a developer container for accommodating the developer; and an oscillation circuit including a resonance circuit constituted by a coil and a circuit portion containing a capacitor and for oscillating a signal for detecting a toner concentration of the developer accommodated in the developer container. The coil is formed on an inner wall surface of the developer container.

Abstract: A nitride semiconductor device includes a channel layer, a barrier layer made of AlxInyGa1-x-yN (x>0, x+y?1), an active region that has a layered structure including the channel layer and the barrier layer, an inactive region that is formed at the layered structure around the active region and that is a concave portion having a bottom portion that reaches the channel layer, a gate layer made of a nitride semiconductor selectively formed on the barrier layer in the active region, a gate electrode formed on the gate layer, a first insulating film that covers the gate electrode and that is in contact with the barrier layer in the active region, and a second insulating film that covers the first insulating film and that is in contact with the inactive region.

Abstract: The present invention provides a hollow-fiber membrane blood purification device obtained by filling a container with a hollow-fiber membrane, in which the hollow-fiber membrane contains a hydrophobic polymer, a hydrophilic polymer and a lipid-soluble substance; the amount of the lipid-soluble substance on the inner surface of the hollow-fiber membrane is 10 mg/m2 or more and 300 mg/m2 or less; and the oxygen transmission rate of the container is 1.8×10?10 cm3·cm/(cm2·s·cmHg) or less.

Abstract: Disclosed is a hollow-fiber membrane blood purification device having an improved antioxidant performance, good water permeation performance and blood compatibility performance, and economic rationality. The present invention provides a hollow-fiber membrane blood purification device including hollow-fiber membranes filled in a vessel, in which the hollow-fiber membranes contain a hydrophobic polymer, a hydrophilic polymer and a fat-soluble vitamin, when a hollow-fiber membrane bundle is divided into five sections in a lengthwise direction and divided sections positioned in endmost portions are defined as body end portions, an amount of the fat-soluble vitamin present in at least one of the body end portions is the largest among amounts of the fat-soluble vitamin present respectively in all the divided sections, and an amount of the fat-soluble vitamin per m2 of a hollow-fiber membrane inner surface of the at least one body end portion is 20 mg/m2 or more and 300 mg/m2 or less.