Abstract: The present disclosure provides a nitride semiconductor device. The nitride semiconductor device includes: an electron travelling layer; an electron supply layer; a gate layer, formed on the electron supply layer; a gate electrode, formed on the gate layer; and a passivation layer, having a source opening and a drain opening. The electron travelling layer includes: a first portion, located under the gate layer; and a second portion, located between the gate layer and the source opening, and located between the gate layer and the drain opening. The electron supply layer includes: a first electron supply layer, formed on the first portion and located below the gate layer; and a second electron supply layer, formed on the second portion and connected to the first electron supply layer.

Abstract: A nitride semiconductor device includes a channel layer, a barrier layer made of AlxInyGa1-x-yN (x>0, x+y?1), an active region that has a layered structure including the channel layer and the barrier layer, an inactive region that is formed at the layered structure around the active region and that is a concave portion having a bottom portion that reaches the channel layer, a gate layer made of a nitride semiconductor selectively formed on the barrier layer in the active region, a gate electrode formed on the gate layer, a first insulating film that covers the gate electrode and that is in contact with the barrier layer in the active region, and a second insulating film that covers the first insulating film and that is in contact with the inactive region.

Abstract: A nitride semiconductor device includes a channel layer, a barrier layer made of AlxInyGa1-x-yN (x>0, x+y?1), an active region that has a layered structure including the channel layer and the barrier layer, an inactive region that is formed at the layered structure around the active region and that is a concave portion having a bottom portion that reaches the channel layer, a gate layer made of a nitride semiconductor selectively formed on the barrier layer in the active region, a gate electrode formed on the gate layer, a first insulating film that covers the gate electrode and that is in contact with the barrier layer in the active region, and a second insulating film that covers the first insulating film and that is in contact with the inactive region.

Abstract: An image forming apparatus includes a first power cord configured to supply a first power, a second power cord configured to supply a second power, a first monitor configured to monitor a supply state of the first power, a second monitor configured to monitor a supply state of the second power, a load to which either the first power or the second power can be supplied, a controller configured to control an operation of the load, and a switcher configured to be switched between a first state in which the first power is supplied to the controller and a second state in which the second power is supplied to the controller.

Abstract: A nitride semiconductor device includes an electron transit layer composed of a nitride semiconductor, an electron supply layer formed on the electron transit layer and composed of a nitride semiconductor having a band gap that is larger than that of the electron transit layer, a gate layer formed on the electron supply layer and composed of a nitride semiconductor including an acceptor impurity, a gate electrode formed on the gate layer, and a source electrode and a drain electrode that are formed on the electron supply layer. The gate layer includes an upper surface in contact with the gate electrode. The upper surface is a Ga-polar surface.

Abstract: An image forming apparatus includes a connector, a conveyance unit, and a controller. The conveyance unit includes first and second sensors, first and second light sources, and a capacitor. Based on the first and second sensors, the controller determines a position of a paper jam having occurred during an image formation job. The first light source is turned-on when the position of the paper jam corresponds to a position of the first sensor and the second light source is turned-on when the position of the paper jam corresponds to a position of the second sensor. When the conveyance unit is pulled out of the image forming apparatus, the connector shuts off the electrical connection between the conveyance unit and a power source, and a light source controlled to turn on by the controller glows based on electric power accumulated in the capacitor during the image formation job.

Abstract: A developing device includes a developer carrying member configured to carry a developer, containing toner and a carrier, for developing an electrostatic latent image formed on an image bearing member, a developer container configured to accommodate the developer, and an oscillation circuit including a resonance circuit including a coil and a circuit portion containing a capacitor and configured to oscillate a signal for detecting a toner concentration of the developer accommodated in the developer container. The coil is formed integrally with the developer container by a metal film, and the coil is disposed on an inner wall surface of the developer container.

Abstract: A nitride semiconductor device includes a channel layer, a barrier layer made of AlxInyGa1-x-yN(x>0, x+y?1), an active region that has a layered structure including the channel layer and the barrier layer, an inactive region that is formed at the layered structure around the active region and that is a concave portion having a bottom portion that reaches the channel layer, a gate layer made of a nitride semiconductor selectively formed on the barrier layer in the active region, a gate electrode formed on the gate layer, a first insulating film that covers the gate electrode and that is in contact with the barrier layer in the active region, and a second insulating film that covers the first insulating film and that is in contact with the inactive region.

Abstract: An image forming apparatus includes a connector, a conveyance unit, and a controller. The conveyance unit includes first and second sensors, first and second light sources, and a capacitor. Based on the first and second sensors, the controller determines a position of a paper jam having occurred during an image formation job. The first light source is turned-on when the position of the paper jam corresponds to a position of the first sensor and the second light source is turned-on when the position of the paper jam corresponds to a position of the second sensor. When the conveyance unit is pulled out of the image forming apparatus, the connector shuts off the electrical connection between the conveyance unit and a power source, and a light source controlled to turn on by the controller glows based on electric power accumulated in the capacitor during the image formation job.

Abstract: A nitride semiconductor device includes a channel layer, a barrier layer made of AlxInyGa1-x-yN (x>0, x+y?1), an active region that has a layered structure including the channel layer and the barrier layer, an inactive region that is formed at the layered structure around the active region and that is a concave portion having a bottom portion that reaches the channel layer, a gate layer made of a nitride semiconductor selectively formed on the barrier layer in the active region, a gate electrode formed on the gate layer, a first insulating film that covers the gate electrode and that is in contact with the barrier layer in the active region, and a second insulating film that covers the first insulating film and that is in contact with the inactive region.

Abstract: The present disclosure provides a nitride semiconductor device. The nitride semiconductor device includes: an electron transport layer, made of a nitride semiconductor; an electron supply layer, disposed on the electron transport layer and made of a nitride semiconductor having a band gap greater than a band gap of the nitride semiconductor of the electron transport layer; a first protective layer, disposed on the electron supply layer and made of a nitride semiconductor having a band gap less than the band gap of the nitride semiconductor of the electron supply layer; a second protective layer, disposed on a portion of the first protective layer and made of a nitride semiconductor having a band gap greater than the band gap of the nitride semiconductor of the first protective layer; and a gate layer, disposed on the second protective layer.

Abstract: A developing device includes a developer carrying member for carrying a developer, containing toner and a carrier, for developing an electrostatic latent image formed on an image bearing member; a developer container for accommodating the developer; and an oscillation circuit including a resonance circuit constituted by a coil and a circuit portion containing a capacitor and for oscillating a signal for detecting a toner concentration of the developer accommodated in the developer container. The coil is formed on an inner wall surface of the developer container.

Abstract: A nitride semiconductor device includes a channel layer, a barrier layer made of AlxInyGa1-x-yN (x>0, x+y?1), an active region that has a layered structure including the channel layer and the barrier layer, an inactive region that is formed at the layered structure around the active region and that is a concave portion having a bottom portion that reaches the channel layer, a gate layer made of a nitride semiconductor selectively formed on the barrier layer in the active region, a gate electrode formed on the gate layer, a first insulating film that covers the gate electrode and that is in contact with the barrier layer in the active region, and a second insulating film that covers the first insulating film and that is in contact with the inactive region.

Abstract: The present invention provides a hollow-fiber membrane blood purification device obtained by filling a container with a hollow-fiber membrane, in which the hollow-fiber membrane contains a hydrophobic polymer, a hydrophilic polymer and a lipid-soluble substance; the amount of the lipid-soluble substance on the inner surface of the hollow-fiber membrane is 10 mg/m2 or more and 300 mg/m2 or less; and the oxygen transmission rate of the container is 1.8×10?10 cm3·cm/(cm2·s·cmHg) or less.

Abstract: Disclosed is a hollow-fiber membrane blood purification device having an improved antioxidant performance, good water permeation performance and blood compatibility performance, and economic rationality. The present invention provides a hollow-fiber membrane blood purification device including hollow-fiber membranes filled in a vessel, in which the hollow-fiber membranes contain a hydrophobic polymer, a hydrophilic polymer and a fat-soluble vitamin, when a hollow-fiber membrane bundle is divided into five sections in a lengthwise direction and divided sections positioned in endmost portions are defined as body end portions, an amount of the fat-soluble vitamin present in at least one of the body end portions is the largest among amounts of the fat-soluble vitamin present respectively in all the divided sections, and an amount of the fat-soluble vitamin per m2 of a hollow-fiber membrane inner surface of the at least one body end portion is 20 mg/m2 or more and 300 mg/m2 or less.

Abstract: The present invention provides a hollow-fiber membrane blood purification device obtained by filling a container with a hollow-fiber membrane, in which the hollow-fiber membrane contains a hydrophobic polymer, a hydrophilic polymer and a lipid-soluble substance; the amount of the lipid-soluble substance on the inner surface of the hollow-fiber membrane is 10 mg/m2 or more and 300 mg/m2 or less; and the oxygen transmission rate of the container is 1.8×10?10 cm3·cm/(cm2·s·cmHg) or less.

Abstract: Disclosed is a hollow-fiber membrane blood purification device having an improved antioxidant performance, good water permeation performance and blood compatibility performance, and economic rationality. The present invention provides a hollow-fiber membrane blood purification device including hollow-fiber membranes filled in a vessel, in which the hollow-fiber membranes contain a hydrophobic polymer, a hydrophilic polymer and a fat-soluble vitamin, when a hollow-fiber membrane bundle is divided into five sections in a lengthwise direction and divided sections positioned in endmost portions are defined as body end portions, an amount of the fat-soluble vitamin present in at least one of the body end portions is the largest among amounts of the fat-soluble vitamin present respectively in all the divided sections, and an amount of the fat-soluble vitamin per m2 of a hollow-fiber membrane inner surface of the at least one body end portion is 20 mg/m2 or more and 300 mg/m2 or less.

Abstract: A photosensitive resin composition which has satisfactory compatibility in dry-film formation, has sensitivity equally to two lights of i-line and h-line, is excellent in resolution and adhesion, and can be developed with an alkaline aqueous solution. Also provided are: a layered photosensitive-resin product including the photosensitive resin composition; a method of forming a resist pattern on a substrate with the layered photosensitive-resin product; and a use of the resist pattern. The photosensitive resin composition comprises: (a) 20-90 mass % thermoplastic copolymer which includes comonomer units derived from an ?,?-unsaturated monomer having a carboxy group and which has an acid equivalent of 100-600 and a weight-average molecular weight of 5,000-500,000; (b) 5-75 mass % addition-polymerizable monomer having at least one ethylenically unsaturated terminal group; (c) 0.01-30 mass % photopolymerization initiator comprising a triarylimidazolyl dimer; and (d) 0.

Abstract: [Purpose] To provide a photosensitive resin composition having satisfactory compatibility during dry film formation, exhibiting similar sensitivity for exposure with both i-line radiation and h-line radiation type exposure devices, having excellent resolution and adhesiveness, allowing development with aqueous alkali solutions, and preferably, having no generation of aggregates during development. [Solution Means] A photosensitive resin composition comprising (a) 20-90 wt % of a thermoplastic copolymer having a specific copolymerizing component copolymerized, and having a carboxyl group content of 100-600 acid equivalents and a weight-average molecular weight of 5,000-500,000, (b) 5-75 wt % of an addition polymerizable monomer having at least one terminal ethylenic unsaturated group, (c) 0.01-30 wt % of a photopolymerization initiator containing a triarylimidazolyl dimer, and (d) 0.001-10 wt % of a pyrazoline compound.

Abstract: [Purpose] To provide a photosensitive resin composition having satisfactory compatibility during dry film formation, exhibiting similar sensitivity for exposure with both i-line radiation and h-line radiation type exposure devices, having excellent resolution and adhesiveness, allowing development with aqueous alkali solutions, and preferably, having no generation of aggregates during development. [Solution Means] A photosensitive resin composition comprising (a) 20-90 wt % of a thermoplastic copolymer having a specific copolymerizing component copolymerized, and having a carboxyl group content of 100-600 acid equivalents and a weight-average molecular weight of 5,000-500,000, (b) 5-75 wt % of an addition polymerizable monomer having at least one terminal ethylenic unsaturated group, (c) 0.01-30 wt % of a photopolymerization initiator containing a triarylimidazolyl dimer, and (d) 0.001-10 wt % of a pyrazoline compound.