Abstract: An operation device includes an operating portion to receive a push-in operation, a lessening member to lessen tilt movement of the operating portion associated with the push-in operation, a supporting portion to support the lessening member, a base portion on which the supporting portion is provided, and at least one placement portion that is provided on the base portion, includes a placing surface to place an end portion of the lessening member, and holds the lessening member on the base portion by the placing surface and the supporting portion in a preparation stage for assembling the operating portion to the base portion.

Abstract: A fluoropolymer of a monomer (I) represented by the general formula (I), wherein a content of a polymerization unit (I) derived from the monomer (I) is 50% by mass or more based on all polymerization units constituting the fluoropolymer: CX2?CX—O—Rf—SO3M??General formula (I) wherein X is independently F or CF3; Rf is a fluorine-containing alkylene group having 1 to 40 carbon atoms or a fluorine-containing alkylene group having 2 to 100 carbon atoms and having an ether bond or a keto group; and M is —H, a metal atom, —NR74, imidazolium optionally having a substituent, pyridinium optionally having a substituent, or phosphonium optionally having a substituent, wherein R7 is H or an organic group. Also disclosed are an aqueous solution and coating composition containing the fluoropolymer.

Abstract: An electrostatic charge image developing toner contains alkylsilane-treated silica particles, cyclic siloxane, and toner particles.

Abstract: A plurality of heat dissipation substrates stacked on each other, intermediate sheets disposed under a lowermost heat dissipation substrate, on an uppermost heat dissipation substrate, and between heat dissipation substrates adjacent to each other, a drying agent disposed over or under the plurality of heat dissipation substrates, and a bag that seals the plurality of heat dissipation substrates, the plurality of intermediate sheets, and the drying agent.

Abstract: A substantially rectangular flat heat dissipation member includes: a composite portion where silicon carbide having voids is impregnated with metal; and a metal portion that is different from the composite portion. Here, a proportion of a volume of the metal portion to a total volume of the heat dissipation member is 2.9% or higher and 12% or lower. In addition, when a length of a diagonal line of the rectangular flat heat dissipation member is represented by L, in a top view where one main surface of the heat dissipation member is a top surface, 40% or higher of a total volume of the metal portion is present in a region D within a distance of L/6 from an apex of any one of four corners of the heat dissipation member. Further, a hole penetrates the metal portion in the region D.

Abstract: To provide a method for manufacturing a heat dissipation component having excellent heat dissipation properties, in which there is minimal return of warping after the bonding of a circuit board, and to provide a heat dissipation component manufactured using the method. Provided is a method for manufacturing a warped flat-plate-shaped heat dissipation component containing a composite part that comprises silicon carbide and an aluminum alloy, wherein the method for manufacturing the heat dissipation component is characterized in that the heat dissipation component is sandwiched in a concave-convex mold having a surface temperature of at least 450° C. and having a pair of opposing spherical surfaces measuring 7000-30,000 mm in curvature radius, and pressure is applied for 30 seconds or more at a stress of 10 kPa or more such that the temperature of the heat dissipation component reaches at least 450° C.

Abstract: A substantially rectangular flat heat dissipation member includes: a composite portion where silicon carbide having voids is impregnated with metal; and a metal portion that is different from the composite portion. Here, a proportion of a volume of the metal portion to a total volume of the heat dissipation member is 2.9% or higher and 12% or lower. In addition, when a length of a diagonal line of the rectangular flat heat dissipation member is represented by L, in a top view where one main surface of the heat dissipation member is a top surface, 40% or higher of a total volume of the metal portion is present in a region D within a distance of L/6 from an apex of any one of four corners of the heat dissipation member. Further, a hole penetrates the metal portion in the region D.

Abstract: A plurality of heat dissipation substrates stacked on each other, intermediate sheets disposed under a lowermost heat dissipation substrate, on an uppermost heat dissipation substrate, and between heat dissipation substrates adjacent to each other, a drying agent disposed over or under the plurality of heat dissipation substrates, and a bag that seals the plurality of heat dissipation substrates, the plurality of intermediate sheets, and the drying agent.

Abstract: To provide a method for manufacturing a heat dissipation component having excellent heat dissipation properties, in which there is minimal return of warping after the bonding of a circuit board, and to provide a heat dissipation component manufactured using the method. Provided is a method for manufacturing a warped flat-plate-shaped heat dissipation component containing a composite part that comprises silicon carbide and an aluminum alloy, wherein the method for manufacturing the heat dissipation component is characterized in that the heat dissipation component is sandwiched in a concave-convex mold having a surface temperature of at least 450° C. and having a pair of opposing spherical surfaces measuring 7000-30,000 mm in curvature radius, and pressure is applied for 30 seconds or more at a stress of 10 kPa or more such that the temperature of the heat dissipation component reaches at least 450° C.

Abstract: The present invention provides an aluminum-diamond composite which combines high thermal conductivity and a coefficient of thermal expansion close to a semiconductor element, and in which the difference between the thicknesses of both surfaces is reduced so as to be suitable for use as a heat sink etc. for a semiconductor element.

Abstract: Provided is an aluminum-diamond-based composite which can be processed with high dimensional accuracy. The flat-plate-shaped aluminum-diamond-based composite is coated with a surface layer of which the entire surface has an average film thickness of 0.01-0.2 mm and which contains not less than 80 volume % of a metal containing an aluminum.

Abstract: To provide a method for manufacturing a heat dissipation component having excellent heat dissipation properties, in which there is minimal return of warping after the bonding of a circuit board, and to provide a heat dissipation component manufactured using the method. Provided is a method for manufacturing a warped flat-plate-shaped heat dissipation component containing a composite part that comprises silicon carbide and an aluminum alloy, wherein the method for manufacturing the heat dissipation component is characterized in that the heat dissipation component is sandwiched in a concave-convex mold having a surface temperature of at least 450° C. and having a pair of opposing spherical surfaces measuring 7000-30,000 mm in curvature radius, and pressure is applied for 30 seconds or more at a stress of 10 kPa or more such that the temperature of the heat dissipation component reaches at least 450° C.

Abstract: A sheet-shaped aluminum-diamond composite containing a prescribed amount of a diamond powder wherein a first and second peak in a volumetric distribution of particle sizes occurs at 5-25 ?m and 55-195 ?m, and a ratio between an area of a volumetric distribution of particle sizes of 1-35 ?m and 45-205 ?m is from 1:9 to 4:6, the composite including an aluminum-containing metal as the balance, wherein the composite is covered, on both main surfaces, with a surface layer having prescribed film thicknesses and containing 80 vol % or more of an aluminum-containing metal, two or more Ni-containing layers are formed on at least the surface layer, the Ni-containing layers being such that a first and second layer from the surface layer side are amorphous Ni alloy layers having prescribed thicknesses, and an Au layer having a prescribed thickness is formed as an outermost layer.

Abstract: A heat dissipation component for a semiconductor element includes: a composite part containing 50-80 vol % diamond powder with the remainder having metal including aluminum, the diamond powder having a particle diameter volume distribution first peak at 5-25 ?m and a second peak at 55-195 ?m. A ratio between a volume distribution area at particle diameters of 1-35 ?m and a volume distribution area at particle diameters of 45-205 ?m is 1:9 to 4:6; surface layers on both composite part principal surfaces, each of the surface layers containing 80 vol % or more metal including aluminum and having a film thickness of 0.03-0.2 mm; and a crystalline Ni layer and an Au layer on at least one of the surface layers, the crystalline Ni layer having a film thickness of 0.5-6.5 ?m, and the Au layer having a film thickness of 0.05 ?m or larger.

Abstract: A sheet-shaped aluminum-diamond composite containing a prescribed amount of a diamond powder wherein a first and second peak in a volumetric distribution of particle sizes occurs at 5-25 ?m and 55-195 ?m, and a ratio between an area of a volumetric distribution of particle sizes of 1-35 ?m and 45-205 ?m is from 1:9 to 4:6, the composite including an aluminum-containing metal as the balance, wherein the composite is covered, on both main surfaces, with a surface layer having prescribed film thicknesses and containing 80 vol % or more of an aluminum-containing metal, two or more Ni-containing layers are formed on at least the surface layer, the Ni-containing layers being such that a first and second layer from the surface layer side are amorphous Ni alloy layers having prescribed thicknesses, and an Au layer having a prescribed thickness is formed as an outermost layer.

Abstract: A composite is obtained by press-molding a mixed powder comprising 20-50 vol % of a metal powder and 50-80 vol % of a diamond powder for which a first peak in a volumetric distribution of particle size lies at 5-25 ?m, and a second peak lies at 55-195 ?m, and a ratio between the area of a volumetric distribution of particle sizes of 1-35 ?m and the area of a volumetric distribution of particle sizes of 45-205 ?m is from 1:9 to 4:6, thereby obtaining a composite having a high thermal conductivity and a coefficient of thermal expansion close to that of semiconductor devices, which is easy to mold into a prescribed shape.

Abstract: An aluminum-diamond composite that exhibits both high thermal conductivity and a coefficient of thermal expansion close to that of semiconductor devices, and that can suppress the occurrence of swelling, etc., of a surface metal layer portion even in actual use under a high load. An aluminum-diamond composite includes 65-80 vol % of a diamond powder having a roundness of at least 0.94, for which a first peak in a volumetric distribution of grain size lies at 5-25 ?m, and a second peak lies at 55-195 ?m, and a ratio between the area of the volumetric distribution of grain sizes of 1-35 ?m and the area of the volumetric distribution of grain sizes of 45-205 ?m is from 1:9 to 4:6; the balance being composed of a metal containing aluminum.

Abstract: Provided is an aluminum-diamond-based composite which can be processed with high dimensional accuracy. The flat-plate-shaped aluminum-diamond-based composite is coated with a surface layer of which the entire surface has an average film thickness of 0.01-0.2 mm and which contains not less than 80 volume % of a metal containing an aluminum.

Abstract: The present invention provides an aluminum-diamond composite which combines high thermal conductivity and a coefficient of thermal expansion close to a semiconductor clement, and in which the difference between the thicknesses of both surfaces is reduced so as to be suitable for use as a heat sink etc. for a semiconductor element.

Abstract: To provide a method for manufacturing a heat dissipation component having excellent heat dissipation properties, in which there is minimal return of warping after the bonding of a circuit board, and to provide a heat dissipation component manufactured using the method. Provided is a method for manufacturing a warped flat-plate-shaped heat dissipation component containing a composite part that comprises silicon carbide and an aluminum alloy, wherein the method for manufacturing the heat dissipation component is characterized in that the heat dissipation component is sandwiched in a concave-convex mold having a surface temperature of at least 450° C. and having a pair of opposing spherical surfaces measuring 7000-30,000 mm in curvature radius, and pressure is applied for 30 seconds or more at a stress of 10 kPa or more such that the temperature of the heat dissipation component reaches at least 450° C.