Abstract: A vacuum processing apparatus of the present invention is a vacuum processing apparatus which performs plasma processing. The vacuum processing apparatus includes an electrode flange, a shower plate, an insulating shield, a processing chamber in which a processing-target substrate is to be disposed, an electrode frame, and a slide plate. The electrode frame and the slide plate are slidable in response to thermal deformation that occurs when a temperature of the shower plate is raised or lowered. The shower plate is supported by the electrode frame using a support member penetrating through an elongated hole. The elongated hole is formed so that the support member is relatively movable in the elongated hole in response to thermal deformation that occurs when a temperature of the shower plate is raised or lowered.

Abstract: A vacuum processing apparatus of the present invention is a vacuum processing apparatus which performs plasma processing. The vacuum processing apparatus includes an electrode flange, a shower plate, an insulating shield, a processing chamber in which a processing-target substrate is to be disposed, an electrode frame, and a slide plate. The electrode frame and the slide plate are slidable in response to thermal deformation that occurs when a temperature of the shower plate is raised or lowered. The shower plate is supported by the electrode frame using a support member penetrating through an elongated hole. The elongated hole is formed so that the support member is relatively movable in the elongated hole in response to thermal deformation that occurs when a temperature of the shower plate is raised or lowered.

Abstract: A vacuum processing apparatus of the present is a vacuum processing apparatus which performs plasma processing. The vacuum processing apparatus includes an electrode flange, a shower plate, an insulating shield, a processing chamber in which a processing-target substrate is to be disposed, an electrode frame, and a slide plate. The electrode frame and the slide plate are slidable in response to thermal deformation that occurs when a temperature of the shower plate is raised or lowered, and a space surrounded by the shower plate, the electrode flange, and the electrode frame is sealable. The electrode frame includes a frame-shaped upper plate surface portion, a vertical plate surface portion, and a lower plate surface portion.

Abstract: A vacuum processing apparatus is a vacuum processing apparatus which performs plasma processing and includes an electrode flange, a shower plate, a processing chamber, and a support shaft. The shower plate is provided with a plurality of gas flow paths that are formed therein, and a shaft gas flow path extending in an axial direction of the support shaft is provided at a portion in which the support shaft is connected to the shower plate so that the conductance does not change in an in-plane direction of the shower plate.

Abstract: A lift pin of the invention is to be in contact with a substrate having a process-target surface and a non-processed surface, and the lift pin includes: a center member that has a first surface having first surface roughness and including an electrical insulator, and a main body serving as an electroconductive member, and that faces the non-processed surface of the substrate; and a surrounding member that has a second surface having second surface roughness lower than the first surface roughness and including an electrical insulator, that surrounds the periphery of the center member, and that faces the non-processed surface of the substrate.

Abstract: A heater base of the invention includes a plurality of displacement mechanisms that are arranged between the heater and the heater base and are provided on the heater base. Of the displacement mechanisms, three or more displacement mechanisms are capable of displacing the heater with respect to the heater base in a state of being in contact with the heater.

Abstract: A thin-film solar cell manufacturing apparatus, includes: a film formation space in which a substrate is disposed so that a film formation face of the substrate is substantially parallel to a direction of gravitational force, and in which a desired film is formed on the film formation face by a CVD method; a cathode unit including cathodes to which a voltage is applied, and two or more power feeding points, the cathodes being disposed at both sides of the cathode unit; and an anode distantly disposed so as to face the cathodes that are disposed at both sides of the cathode unit.