Abstract: An imaging element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; an organic layer provided between the first electrode and the second electrode and at least including a photoelectric conversion layer; and a first semiconductor layer provided between the second electrode and the organic layer and having an electron affinity of 4.5 eV or more and 6.0 eV or less, the first semiconductor layer including a first carbon-containing compound and a second carbon-containing compound, the first carbon-containing compound having an electron affinity greater than 4.8 eV or an electron affinity greater than a work function of the second electrode, the second carbon-containing compound having an ionization potential greater than 5.5 eV.

Abstract: A photoelectric conversion device according to an embodiment of the present disclosure includes: a first electrode (11); a second electrode disposed to face the first electrode (11); a photoelectric conversion layer (13) provided between the first electrode (11) and the second electrode, the photoelectric conversion layer (13) including fullerenes or fullerene derivatives; a first electric charge block layer (12A) provided between the first electrode (11) and the photoelectric conversion layer (13), the first electric charge block layer (12A) including an organic material having an HOMO level that is deeper by 1 eV or higher and an LUMO level ranging from 3.7 eV to 4.8 eV inclusive, with respect to a work function of the first electrode (11); and a second electric charge block layer (12B) provided between the first electric charge block layer (12A) and the photoelectric conversion layer (13), the second electric charge block layer (12B) including the fullerenes or the fullerene derivatives.

Abstract: A semiconductor storage device includes a stacked body including conductive layers stacked in a first direction; columnar bodies of a first group extending in the first direction in the stacked body, wherein memory cell transistors are respectively formed at intersections of the conductive layers and the columnar bodies of the first group; columnar bodies of a second group that are arranged in a second direction, and respectively include an insulating material; and an insulating film extending in the first direction and the second direction in the stacked body, and divides the stacked body to include a first portion adjacent to the columnar bodies of the first group, a second portion adjacent to the columnar bodies of the second group, a third portion between the first portion and the second portion, and a first protruding part protruding from one side surface in the third direction in the third portion.

Abstract: A touch panel switch device includes a display panel, a touch panel placed correspondingly to the display panel, a storage part and a control part. The storage part stores switch image information according to respective operation functions, code information according to the respective operation functions and placement information for display designating placement of switch images to be displayed on the display panel. The control part is configured to make the display panel display the switch images according to the switch image information and the placement information for display, and, in accordance with a touch operation onto the touch panel, read out from the storage part the code information corresponding to the switch image displayed at a location of the touch operation, perform output control of the code information, and also perform a rewrite process of the placement information for display based on received information.

Abstract: A semiconductor storage device includes a stacked body including conductive layers stacked in a first direction; columnar bodies of a first group extending in the first direction in the stacked body, wherein memory cell transistors are respectively formed at intersections of the conductive layers and the columnar bodies of the first group; columnar bodies of a second group that are arranged in a second direction, and respectively include an insulating material; and an insulating film extending in the first direction and the second direction in the stacked body, and divides the stacked body to include a first portion adjacent to the columnar bodies of the first group, a second portion adjacent to the columnar bodies of the second group, a third portion between the first portion and the second portion, and a first protruding part protruding from one side surface in the third direction in the third portion.

Abstract: Provided are an antireflection film having a high antireflection effect and a production process therefor, an optical member excellent in antireflection effect, a water-repellent film having excellent water repellency, a substrate for mass spectrometry having high detection sensitivity, a high-accuracy phase plate, and a fine structure that can be used in the foregoing and a production process therefor. The fine structure is a structure, including multiple conical portions on a surface thereof, in which the conical portions have a mesostructure; and the mesostructure includes a structure having mesopores.

Abstract: A touch panel switch device includes a display panel, a touch panel placed correspondingly to the display panel, a storage part and a control part. The storage part stores switch image information according to respective operation functions, code information according to the respective operation functions and placement information for display designating placement of switch images to be displayed on the display panel. The control part is configured to make the display panel display the switch images according to the switch image information and the placement information for display, and, in accordance with a touch operation onto the touch panel, read out from the storage part the code information corresponding to the switch image displayed at a location of the touch operation, perform output control of the code information, and also perform a rewrite process of the placement information for display based on received information.

Abstract: Provided are an antireflection film having a high antireflection effect and a production process therefor, an optical member excellent in antireflection effect, a water-repellent film having excellent water repellency, a substrate for mass spectrometry having high detection sensitivity, a high-accuracy phase plate, and a fine structure that can be used in the foregoing and a production process therefor. The fine structure is a structure, including multiple conical portions on a surface thereof, in which the conical portions have a mesostructure; and the mesostructure includes a structure having mesopores.

Abstract: There is provided a music distribution method capable of performing high-security music data distribution at high speed through the internet or other such network, wherein music data is divided into insufficient data and add-on data (step S101), the insufficient data, a restoration program and a communications program are written in a read-only fashion into a ROM section of a medium and the medium is distributed (steps S110-104), then the add-on data and such are distributed through the internet or the like (step S105) to be recorded into a RAM section of the medium and the music data is restored, producing a result that music may be regenerated on a terminal device.

Abstract: There is provided a method of connecting to a network such as the internet, having good operability for a user. When the user sets a medium into a personal computer, a central processing unit of the personal computer reads a booting program, an OS, various applications and a network connection program for connecting to the internet or the like which have been written into a ROM unit and RAM unit of the medium, then boots these and connects to the network such as the internet. Data downloaded from the connecting destination is written to the RAM unit of the medium and used locally.

Abstract: A logic regulation circuit for regulating the frequency dividing ratio of a variable frequency divider of an electronic timepiece comprises a first switch group having a plurality of ON and OFF switching states representative of different frequency rates and a second switch group having a plurality of ON and OFF switching states representative of frequency rate adjustment values. A first set of memory circuits is connected to the first switch group for memorizing the ON-OFF information thereof, and a second set of memory circuits is connected to the second switch group for memorizing the ON-OFF information thereof.