Abstract: The present invention relates to a pressure-sensitive adhesive composition including a base polymer and a material that is discolored by water or water vapor, a pressure-sensitive adhesive sheet including a pressure-sensitive adhesive layer containing the pressure-sensitive adhesive composition, a method for producing the pressure-sensitive adhesive composition, and a method for attaching the pressure-sensitive adhesive sheet to an adherend and detecting presence of the water or the water vapor in the attached location.

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, first to third nitride regions, and first and second insulating films. The first nitride region includes Alx1Ga1?x1N, and includes first and second partial regions, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The first nitride region includes first to fifth partial regions. The second nitride region includes Alx2Ga1?x2N, and sixth and seventh partial regions. At least a portion of the third electrode is between the sixth and seventh partial regions. The first insulating film includes silicon and oxygen and includes first and second insulating regions. The third nitride region includes Alx3Ga1?x3N, and first to seventh portions. The second insulating film includes silicon and oxygen and includes third to seventh insulating regions.

Abstract: An outboard motor includes an engine, a fuel pump to draw fuel into an outboard motor body from a fuel tank installed on a hull, a temporary storage tank to temporarily store the fuel drawn into the outboard motor body by the fuel pump, a fuel injector to inject the fuel stored in the temporary storage tank into the engine, a temperature sensor on the temporary storage tank to detect a temperature of the fuel stored in the temporary storage tank, and a controller configured or programmed to perform a control to limit an engine speed to no more than a predetermined upper limit rotation speed based on a detection result of the temperature sensor while the engine is running.

Abstract: An information generation device generating a test case being a simulation model for reproducing a road traffic condition in an area on a road including a target point, the information generation device including: a first storage unit that stores moving-object information being information regarding a moving object existing in the area; a determination unit that determines whether or not an incident in which the moving object existing in the area shows a behavior that leads to occurrence of an accident has occurred, on the basis of the moving-object information; an extraction unit that extracts, as target information, moving-object information in a target period being a predetermined time period including a time point at which the incident occurred; and a generation unit that generates the test case upon occurrence of the incident on the basis of the target information.

Abstract: A sheet conveying device includes a conveyor, a sound collector, and circuitry. The conveyor conveys a sheet. The conveyor conveys a sheet in a sheet conveyance direction. The sound collector collects an operating sound generated by a conveyance of the sheet. The circuitry is to extract a feature amount of the operating sound collected by the sound collector, and determine, at different positions in the sheet conveyance direction based on the feature amount, whether an abnormal conveyance of the sheet occurs until the sheet is conveyed to a given position in the sheet conveyance direction.

Abstract: In a vehicle including a first MG serving as a driving source, a power transmission mechanism configured to transmit power of the first MG to a drive wheel, and an oil circulation mechanism for cooling the power transmission mechanism and the first MG, it is determined that oil is short when a temperature of the first MG is higher than a temperature of the oil and a difference between the temperature of the first MG and the temperature of the oil is greater than a prescribed value.

Abstract: Methods for improving read time performance and energy consumption when reading multiple pages within a memory block by dynamically skipping or accelerating unselected word line discharge cycles are described. In some cases, a controller or one or more control circuits in communication with word lines and bit lines associated with a memory block may detect that a read command or instruction for reading a second page within the memory block has arrived prior to the word line discharge phase associated with reading a first page within the memory block, and in response, the controller may skip the discharge cycle for unselected word lines within the memory block prior to reading the second page and initiate the next page read for the second page after a partial discharge period of time.

Abstract: Methods for improving read time performance and energy consumption when reading multiple pages within a memory block by dynamically skipping or accelerating unselected word line discharge cycles are described. In some cases, a controller or one or more control circuits in communication with word lines and bit lines associated with a memory block may detect that a read command or instruction for reading a second page within the memory block has arrived prior to the word line discharge phase associated with reading a first page within the memory block, and in response, the controller may skip the discharge cycle for unselected word lines within the memory block prior to reading the second page and initiate the next page read for the second page after a partial discharge period of time.

Abstract: Methods for improving read time performance and energy consumption when reading multiple pages within a memory block by dynamically skipping or accelerating unselected word line discharge cycles are described. In some cases, a controller or one or more control circuits in communication with word lines and bit lines associated with a memory block may detect that a read command or instruction for reading a second page within the memory block has arrived prior to the word line discharge phase associated with reading a first page within the memory block, and in response, the controller may skip the discharge cycle for unselected word lines within the memory block prior to reading the second page and initiate the next page read for the second page after a partial discharge period of time.

Abstract: Sensing techniques and associated circuitry are provided for use with a memory device. The techniques are suited for sensing operations involving even-numbered or odd-numbered bit lines. In one approach, a mapping between caches and sense amplifiers in a sensing circuit is modified by using dual data buses. One bus is used for same-tier transfers and the other is used for cross-tier transfers. Each tier comprises a set of sense amplifiers and a corresponding set of caches. This approach does not require a modification of the input/output path which is connected to the sensing circuitry.

Abstract: In a vertical through hole of a rotational shaft, a first protrusion portion and a second protrusion portion protruding from an inner peripheral surface of the vertical through hole are provided in an axial direction of the through hole to form a storage area for storing oil, and discharge holes for directly discharging oil flowing over the first protrusion portion into the transaxle casing are provided in parallel with cooling holes.

Abstract: Sensing techniques and associated circuitry are provided for use with a memory device. The techniques are suited for sensing operations involving even-numbered or odd-numbered bit lines. In one approach, the sensing circuitry includes left and right hand portions which have separate cache access lines, but are connected to a common output bus. A full data word can be output at a time by using a half word from the left hand portion and a half word from the right hand portion. Or, the sensing circuitry can be configured so that a full data word is output at a time from the left or right hand portion. One implementation provides an N-bit bus and N input paths for each of the left and right hand portions. Another implementation provides an N-bit bus and N/2 input paths for each of the left and right hand portions.

Abstract: Sensing techniques and associated circuitry are provided for use with a memory device. The techniques are suited for sensing operations involving even-numbered or odd-numbered bit lines. In one approach, a mapping between caches and sense amplifiers in a sensing circuit is modified by using dual data buses. One bus is used for same-tier transfers and the other is used for cross-tier transfers. Each tier comprises a set of sense amplifiers and a corresponding set of caches. This approach does not require a modification of the input/output path which is connected to the sensing circuitry.

Abstract: Sensing techniques and associated circuitry are provided for use with a memory device. The techniques are suited for sensing operations involving even-numbered or odd-numbered bit lines. In one approach, the sensing circuitry includes left and right hand portions which have separate cache access lines, but are connected to a common output bus. A full data word can be output at a time by using a half word from the left hand portion and a half word from the right hand portion. Or, the sensing circuitry can be configured so that a full data word is output at a time from the left or right hand portion. One implementation provides an N-bit bus and N input paths for each of the left and right hand portions. Another implementation provides an N-bit bus and N/2 input paths for each of the left and right hand portions.

Abstract: A compact and versatile high speed sense amplifier suitable for use in non-volatile memory circuits is presented. The sense amp circuit uses one power supply level for the bit line driving path and a second supply level for a data latch of the sense amp. The latch's supply level is of a high level that used for driving the bit lines and can be provided by a charge pump. The sense amp need use only NMOS devices for its analog path. For balancing performance and current consumption, the sense amp also includes an additional latch to support a “hybrid lockout” sensing mode, where in a verify operation a read-lockout is used between different data states, but not between the low and high quick pass write (QPW) verifies.

Abstract: Upon selecting non-volatile storage elements to be sensed, the system obtains information about the position of these non-volatile storage elements, determines sensing parameters based at least in part on this information, pre-charges a charge storage device and, while maintaining the voltage level of the bit lines of these memory cells at a constant value, applies a reference signal to these non-volatile storage elements for a certain duration of time, afterwards determining whether, for the certain duration of time, the current conducted by these non-volatile storage elements exceeds a predetermined value.

Abstract: Upon selecting non-volatile storage elements to be sensed, the system obtains information about the position of these non-volatile storage elements, determines sensing parameters based at least in part on this information, pre-charges a charge storage device and, while maintaining the voltage level of the bit lines of these memory cells at a constant value, applies a reference signal to these non-volatile storage elements for a certain duration of time, afterwards determining whether, for the certain duration of time, the current conducted by these non-volatile storage elements exceeds a predetermined value.

Abstract: Upon selecting non-volatile storage elements to be sensed, the system obtains information about the position of these non-volatile storage elements, determines sensing parameters based at least in part on this information, pre-charges a charge storage device and, while maintaining the voltage level of the bit lines of these memory cells at a constant value, applies a reference signal to these non-volatile storage elements for a certain duration of time, afterwards determining whether, for the certain duration of time, the current conducted by these non-volatile storage elements exceeds a predetermined value.

Abstract: Upon selecting non-volatile storage elements to be sensed, the system obtains information about the position of these non-volatile storage elements, determines sensing parameters based at least in part on this information, pre-charges a charge storage device and, while maintaining the voltage level of the bit lines of these memory cells at a constant value, applies a reference signal to these non-volatile storage elements for a certain duration of time, afterwards determining whether, for the certain duration of time, the current conducted by these non-volatile storage elements exceeds a predetermined value.

Abstract: Disclosed is a parking lock apparatus which can prevent an electric actuator from being accessed from the outside of the vehicle, and thereby can prevent the function of the parking lock apparatus from being lowered as well as can reduce the production cost in comparison with the conventional parking lock apparatus. The parking lock apparatus comprises an electric actuator 11 to be activated in response to the shift operation, and a parking lock apparatus 12 capable of selectively taking a parking lock maintained state to have the stoppage state of a vehicle 1 maintained or a parking lock released state to have the stoppage state of the vehicle 1 released. The electric actuator 11 is disposed between a first housing 1H partly constituting an engine 2 for generating a power and a second housing 2H partly constituting a transaxle 3 for transmitting the power generated by the engine 2.