Abstract: An outboard motor includes an engine, a fuel pump to draw fuel into an outboard motor body from a fuel tank installed on a hull, a temporary storage tank to temporarily store the fuel drawn into the outboard motor body by the fuel pump, a fuel injector to inject the fuel stored in the temporary storage tank into the engine, a temperature sensor on the temporary storage tank to detect a temperature of the fuel stored in the temporary storage tank, and a controller configured or programmed to perform a control to limit an engine speed to no more than a predetermined upper limit rotation speed based on a detection result of the temperature sensor while the engine is running.

Abstract: An outboard motor includes an engine and a plurality of fuel supply mechanisms each including a suction pump to suck in liquid fuel stored in a fuel tank in a hull, a vapor separator tank to store liquid fuel sucked in by the suction pump and separate the liquid fuel and vapor, and a supply pump to supply the liquid fuel stored in the vapor separator tank to the engine.

Abstract: A memory apparatus is provided and includes memory cells configured to retain a threshold voltage corresponding to data states. The memory cells are disposed in memory holes each connected to bit lines. Each of the bit lines is coupled to one of a plurality of sense amplifiers arranged in tiers. A control means is configured to program the memory cells in each of a plurality of program iterations of a program operation. The control means counts a failure quantity of a group of the memory cells having the threshold voltage below one of a plurality of verify voltages associated with one of the data states targeted for the memory cells in each of a plurality of verify iterations of a program operation. The count is a coarse count not separately counting the memory cells coupled with ones of the plurality of sense amplifiers of one or more of the tiers.

Abstract: A polyimide film bonding method according to an embodiment may include: bonding two polyimide films to each other by bringing a hot plate into contact with a portion where the two polyimide films are superposed. A heating temperature by the contact with the hot plate is 450° C. or higher. A contact time between the polyimide films and the hot plate is 12 seconds or less. A polyimide film bonding method according to another embodiment may include: bonding two polyimide films to each other by irradiating, with a laser beam, a portion where the two polyimide films are superposed. A top surface of the superposed polyimide films is irradiated with the laser beam while a bottom surface of the superposed polyimide films is kept tightly attached to a heat insulator.

Abstract: In a vehicle including a first MG serving as a driving source, a power transmission mechanism configured to transmit power of the first MG to a drive wheel, and an oil circulation mechanism for cooling the power transmission mechanism and the first MG, it is determined that oil is short when a temperature of the first MG is higher than a temperature of the oil and a difference between the temperature of the first MG and the temperature of the oil is greater than a prescribed value.

Abstract: An outboard motor includes an engine and a plurality of fuel supply mechanisms each including a suction pump to suck in liquid fuel stored in a fuel tank in a hull, a vapor separator tank to store liquid fuel sucked in by the suction pump and separate the liquid fuel and vapor, and a supply pump to supply the liquid fuel stored in the vapor separator tank to the engine.

Abstract: An outboard motor includes an engine, a fuel pump to draw fuel into an outboard motor body from a fuel tank installed on a hull, a temporary storage tank to temporarily store the fuel drawn into the outboard motor body by the fuel pump, a fuel injector to inject the fuel stored in the temporary storage tank into the engine, a temperature sensor on the temporary storage tank to detect a temperature of the fuel stored in the temporary storage tank, and a controller configured or programmed to perform a control to limit an engine speed to no more than a predetermined upper limit rotation speed based on a detection result of the temperature sensor while the engine is running.

Abstract: In a vehicle including a first MG serving as a driving source, a power transmission mechanism configured to transmit power of the first MG to a drive wheel, and an oil circulation mechanism for cooling the power transmission mechanism and the first MG, it is determined that oil is short when a temperature of the first MG is higher than a temperature of the oil and a difference between the temperature of the first MG and the temperature of the oil is greater than a prescribed value.

Abstract: Methods for improving read time performance and energy consumption when reading multiple pages within a memory block by dynamically skipping or accelerating unselected word line discharge cycles are described. In some cases, a controller or one or more control circuits in communication with word lines and bit lines associated with a memory block may detect that a read command or instruction for reading a second page within the memory block has arrived prior to the word line discharge phase associated with reading a first page within the memory block, and in response, the controller may skip the discharge cycle for unselected word lines within the memory block prior to reading the second page and initiate the next page read for the second page after a partial discharge period of time.

Abstract: Methods for improving read time performance and energy consumption when reading multiple pages within a memory block by dynamically skipping or accelerating unselected word line discharge cycles are described. In some cases, a controller or one or more control circuits in communication with word lines and bit lines associated with a memory block may detect that a read command or instruction for reading a second page within the memory block has arrived prior to the word line discharge phase associated with reading a first page within the memory block, and in response, the controller may skip the discharge cycle for unselected word lines within the memory block prior to reading the second page and initiate the next page read for the second page after a partial discharge period of time.

Abstract: Methods for improving read time performance and energy consumption when reading multiple pages within a memory block by dynamically skipping or accelerating unselected word line discharge cycles are described. In some cases, a controller or one or more control circuits in communication with word lines and bit lines associated with a memory block may detect that a read command or instruction for reading a second page within the memory block has arrived prior to the word line discharge phase associated with reading a first page within the memory block, and in response, the controller may skip the discharge cycle for unselected word lines within the memory block prior to reading the second page and initiate the next page read for the second page after a partial discharge period of time.

Abstract: Sensing techniques and associated circuitry are provided for use with a memory device. The techniques are suited for sensing operations involving even-numbered or odd-numbered bit lines. In one approach, a mapping between caches and sense amplifiers in a sensing circuit is modified by using dual data buses. One bus is used for same-tier transfers and the other is used for cross-tier transfers. Each tier comprises a set of sense amplifiers and a corresponding set of caches. This approach does not require a modification of the input/output path which is connected to the sensing circuitry.

Abstract: In a vertical through hole of a rotational shaft, a first protrusion portion and a second protrusion portion protruding from an inner peripheral surface of the vertical through hole are provided in an axial direction of the through hole to form a storage area for storing oil, and discharge holes for directly discharging oil flowing over the first protrusion portion into the transaxle casing are provided in parallel with cooling holes.

Abstract: Sensing techniques and associated circuitry are provided for use with a memory device. The techniques are suited for sensing operations involving even-numbered or odd-numbered bit lines. In one approach, the sensing circuitry includes left and right hand portions which have separate cache access lines, but are connected to a common output bus. A full data word can be output at a time by using a half word from the left hand portion and a half word from the right hand portion. Or, the sensing circuitry can be configured so that a full data word is output at a time from the left or right hand portion. One implementation provides an N-bit bus and N input paths for each of the left and right hand portions. Another implementation provides an N-bit bus and N/2 input paths for each of the left and right hand portions.

Abstract: Sensing techniques and associated circuitry are provided for use with a memory device. The techniques are suited for sensing operations involving even-numbered or odd-numbered bit lines. In one approach, a mapping between caches and sense amplifiers in a sensing circuit is modified by using dual data buses. One bus is used for same-tier transfers and the other is used for cross-tier transfers. Each tier comprises a set of sense amplifiers and a corresponding set of caches. This approach does not require a modification of the input/output path which is connected to the sensing circuitry.

Abstract: Sensing techniques and associated circuitry are provided for use with a memory device. The techniques are suited for sensing operations involving even-numbered or odd-numbered bit lines. In one approach, the sensing circuitry includes left and right hand portions which have separate cache access lines, but are connected to a common output bus. A full data word can be output at a time by using a half word from the left hand portion and a half word from the right hand portion. Or, the sensing circuitry can be configured so that a full data word is output at a time from the left or right hand portion. One implementation provides an N-bit bus and N input paths for each of the left and right hand portions. Another implementation provides an N-bit bus and N/2 input paths for each of the left and right hand portions.

Abstract: A compact and versatile high speed sense amplifier suitable for use in non-volatile memory circuits is presented. The sense amp circuit uses one power supply level for the bit line driving path and a second supply level for a data latch of the sense amp. The latch's supply level is of a high level that used for driving the bit lines and can be provided by a charge pump. The sense amp need use only NMOS devices for its analog path. For balancing performance and current consumption, the sense amp also includes an additional latch to support a “hybrid lockout” sensing mode, where in a verify operation a read-lockout is used between different data states, but not between the low and high quick pass write (QPW) verifies.

Abstract: Upon selecting non-volatile storage elements to be sensed, the system obtains information about the position of these non-volatile storage elements, determines sensing parameters based at least in part on this information, pre-charges a charge storage device and, while maintaining the voltage level of the bit lines of these memory cells at a constant value, applies a reference signal to these non-volatile storage elements for a certain duration of time, afterwards determining whether, for the certain duration of time, the current conducted by these non-volatile storage elements exceeds a predetermined value.

Abstract: Upon selecting non-volatile storage elements to be sensed, the system obtains information about the position of these non-volatile storage elements, determines sensing parameters based at least in part on this information, pre-charges a charge storage device and, while maintaining the voltage level of the bit lines of these memory cells at a constant value, applies a reference signal to these non-volatile storage elements for a certain duration of time, afterwards determining whether, for the certain duration of time, the current conducted by these non-volatile storage elements exceeds a predetermined value.

Abstract: Upon selecting non-volatile storage elements to be sensed, the system obtains information about the position of these non-volatile storage elements, determines sensing parameters based at least in part on this information, pre-charges a charge storage device and, while maintaining the voltage level of the bit lines of these memory cells at a constant value, applies a reference signal to these non-volatile storage elements for a certain duration of time, afterwards determining whether, for the certain duration of time, the current conducted by these non-volatile storage elements exceeds a predetermined value.