Abstract: Provided is a semiconductor device in which a boundary region between a transistor portion and a diode portion includes: a first portion which is in contact with the transistor portion and is not provided with a lifetime adjustment region; and a second portion which is in contact with the diode portion and to which the lifetime adjustment region of the diode portion extends, a density distribution of a lifetime killer in a first direction has a lateral slope where a density of the lifetime killer decreases from the second portion of the boundary region toward the first portion, a width of the first portion is smaller than a width of the second portion in the first direction, and the width of the first portion is equal to or larger than a width of the lateral slope in the first direction.

Abstract: Provided is a transmission device of a single carrier frequency-domain equalization scheme having a circuit in which a cyclic prefix (CP) and an overlap margin (OM) are inserted, and a time-domain windowing processing circuit to which is input a transmission symbol into which the CP and the OM have been inserted. The time-domain windowing processing circuit multiplies an arbitrary time-domain window function and suppresses out-of-band emission. In the time-domain windowing processing circuit, a window transition length of the time-domain window function is equal to or larger than a length of the CP.

Abstract: Provided is a transmission device of a single carrier frequency-domain equalization scheme having a circuit in which a cyclic prefix (CP) and an overlap margin (OM) are inserted, and a time-domain windowing processing circuit to which is input a transmission symbol into which the CP and the OM have been inserted. The time-domain windowing processing circuit multiplies an arbitrary time-domain window function and suppresses out-of-band emission. In the time-domain windowing processing circuit, a window transition length of the time-domain window function is equal to or larger than a length of the CP.