Abstract: In a soundproof member 10 including a polyurethane foam 11 and disposed apart from an engine E on a vehicle interior side of a dash panel 50 partitioning a space into an engine room having the engine E as a sound source and a vehicle interior, the polyurethane foam 11 has a surface layer 12 on at least a part of the surface thereof, a one side surface of the polyurethane foam 11 directly facing the vehicle interior side of the dash panel 50 has at least a surface layer 12A in an open cell state or a core, and a surface layer 12B of the other side surface opposite to the one side surface is a surface layer in a closed cell state.

Abstract: A transmission data controller determines a frequency bandwidth according to a relay apparatus position, the frequency bandwidth being used for a first signal transmitted from a first communication apparatus, on the basis of information regarding the number of first communication apparatuses with which a relay apparatus communicates at the relay apparatus position. The transmission data controller transmits band information indicating a frequency band selected from radio frequency bands that can be used for the first signal on the basis of the determined frequency bandwidth to the first communication apparatus. The first communication apparatus transmits the first signal having a frequency included in the frequency band indicated by the band information. The relay apparatus acquires waveform data of the first signal transmitted by the first communication apparatus, and transmits the acquired waveform data to a second communication apparatus by a second signal.

Abstract: There are provided a phase shift mask blank capable of sufficiently suppressing the generation of a haze on a mask, a phase shift mask with few haze defects, and a method for manufacturing the phase shift mask.

Abstract: There are provided a reflective mask blank, a reflective mask, a reflective mask manufacturing method, and a reflective mask correction technique capable of reducing time required for electron beam correction etching, even when a material used for a thin absorption film has a large extinction coefficient k to an EUV light. A reflective photomask blank (10) according to this embodiment has a substrate (1), a multi-layer reflective film (2), a capping layer (3), and a low reflective portion (5), in which the low reflective portion (5) is obtained by alternately depositing an absorption film (A) and an absorption film (B), the correction etching rate in the electron beam correction of the absorption film (A) is larger than the correction etching rate in the electron beam correction of the absorption film (B), and the absorption film (B) contains one or more elements selected from tin, indium, platinum, nickel, tellurium, silver, and cobalt.

Abstract: A photomask blank and a photomask having favorable wafer transfer characteristics and irradiation resistance. A photomask blank is for fabricating a photomask for an exposure wavelength of 193 nm, the photomask blank comprising: a light-transmissive substrate; a phase shift film formed on the light-transmissive substrate and providing phase shift effects of a light transmittance of at least 30% with respect to exposure light; and a light-shielding film formed on the phase shift film. The phase shift film is constituted by lamination of: a first phase shift film (that uses a silicon nitride-based material, has a refractive index n1 of 2.5 to 2.7, and an extinction coefficient k1 of 0.2 to 0.4; and a second phase shift film that uses a silicon oxynitride-based material, has a refractive index n2 of 1.55 to 2.20, and an extinction coefficient k2 greater than 0 but no greater than 0.1.

Abstract: An information processing system in the present invention includes a storage unit that stores first data including no personal information on a person and does not store second data including the personal information; a first output unit that outputs the first data to a first apparatus in response to a request from the first apparatus; and a second output unit that acquires the second data from a second apparatus and outputs, to the second apparatus, third data obtained by combining the personal information with the first data.

Abstract: A photomask blank and a photomask having favorable wafer transfer characteristics and irradiation resistance. A photomask blank is for fabricating a photomask for an exposure wavelength of 193 nm, the photomask blank comprising: a light-transmissive substrate; a phase shift film formed on the light-transmissive substrate and providing phase shift effects of a light transmittance of at least 30% with respect to exposure light; and a light-shielding film formed on the phase shift film. The phase shift film is constituted by lamination of: a first phase shift film (that uses a silicon nitride-based material, has a refractive index n1 of 2.5 to 2.7, and an extinction coefficient k1 of 0.2 to 0.4; and a second phase shift film that uses a silicon oxynitride-based material, has a refractive index n2 of 1.55 to 2.20, and an extinction coefficient k2 greater than 0 but no greater than 0.1.

Abstract: According to one embodiment, a photomask blank wherein a second film is stacked on a first film, the first film containing chromium and which is not substantially etched by the dry etching using fluorine and which is etchable by the dry etching using oxygen-containing chlorine, and the second film containing no chromium and which is etchable by dry etching using fluorine and dry etching using oxygen-containing chlorine.

Abstract: Apparatus and method capable of extracting a part where information highly necessary for a user is displayed without using information registered in advance. The method includes detecting an operation part in a screen, comparing a first screen and a second screen, determining a priority order of objects in the first and second screens based on a result of the comparing and displaying at least one of the objects in the first and second screens on a display device based on the priority order. The screen is changed to the first screen by first operation of the operation part and the screen is changed to the second screen by a second operation of the operation part.

Abstract: A light pattern exposure method is by irradiating ArF excimer laser light to a resist film through a photomask. The photomask includes a transparent substrate and a pattern of optical film of a material comprising a transition metal, silicon, nitrogen and oxygen, with contents thereof falling in a specific range. The photomask may be irradiated with ArF excimer laser light in a cumulative dose of at least 10 kJ/cm2.

Abstract: A light pattern exposure method is by irradiating ArF excimer laser light to a resist film through a halftone phase shift mask. The mask includes a transparent substrate and a pattern of halftone phase shift film of a material comprising a transition metal, silicon, nitrogen and oxygen and having an atomic ratio (Met/Si) of 0.18-0.25, a nitrogen content of 25-50 atom %, and an oxygen content of 5-20 atom %. The mask may be irradiated with ArF excimer laser light in a cumulative dose of at least 10 kJ/cm2.

Abstract: A photomask blank has a film of a transition metal/silicon base material comprising a transition metal, silicon, oxygen and nitrogen, having an oxygen content of at least 3 atom %, and satisfying the formula: 4×CSi/100?6×CM/100>1 wherein CSi is a silicon content in atom % and CM is a transition metal content in atom %.

Abstract: According to one embodiment, a photomask blank wherein a second film is stacked on a first film, the first film containing chromium and which is not substantially etched by the dry etching using fluorine and which is etchable by the dry etching using oxygen-containing chlorine, and the second film containing no chromium and which is etchable by dry etching using fluorine and dry etching using oxygen-containing chlorine.

Abstract: Apparatus and method capable of extracting a part where information highly necessary for a user is displayed without using information registered in advance. The method includes detecting an operation part in a screen, comparing a first screen and a second screen, determining a priority order of objects in the first and second screens based on a result of the comparing and displaying at least one of the objects in the first and second screens on a display device based on the priority order. The screen is changed to the first screen by first operation of the operation part and the screen is changed to the second screen by a second operation of the operation part.

Abstract: A photomask blank has a film of a transition metal/silicon base material comprising a transition metal, silicon, oxygen and nitrogen, having an oxygen content of at least 3 atom %, and satisfying the formula: 4×CSi/100?6×CM/100>1 wherein CSi is a silicon content in atom % and CM is a transition metal content in atom %.

Abstract: A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

Abstract: A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

Abstract: A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

Abstract: A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

Abstract: A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.