Patents by Inventor Yosuke Miyoshi
Yosuke Miyoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11932147Abstract: Disclosed is a seat including: sensors which includes a first cushion sensor provided at a seat cushion in a position corresponding to buttocks of an occupant, a second cushion sensor provided at the seat cushion and located farther frontward than the first cushion sensor, a first back sensor provided at a seat back and located in a lower position thereof, and a second back sensor provided at the seat back and located above the first back sensor; and a controller connected to the sensors and thereby allowed to acquire pressure values from the respective sensors. The controller is configured to identify the motion of the occupant based on outputs of at least two sensors of the first cushion sensor, the second cushion sensor, the first back sensor, and the second back sensor.Type: GrantFiled: February 28, 2019Date of Patent: March 19, 2024Assignee: TS TECH CO., LTD.Inventors: Hiroyuki Kaku, Atsushi Kusano, Hiroyuki Numajiri, Satoshi Fujita, Takako Miyoshi, Munetaka Kowa, Ryuichiro Hirose, Yoshikazu Ito, Yosuke Higashi, Satoshi Suzuki, Ryosuke Sato, Kento Uetake, Yasuharu Otsuka, Satoru Kaneda
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Patent number: 6924201Abstract: A heterojunction bipolar transistor of the present invention is produced from a wafer including a substrate and a collector layer of a first conductivity type, a base layer of a second conductivity type and an emitter layer of the first conductivity type sequentially laminated on the substrate in this order. First, the wafer is etched up to a preselected depth of the collector layer via a first photoresist, which is formed at a preselected position on the emitter layer, serving as a mask. Subsequently, the collector layer etched with at least the sidewalls of the base layer and collector layer, which are exposed by the first etching step, and a second photoresist covering part of the surface of the collector layer contiguous with the sidewalls serving as a mask.Type: GrantFiled: May 29, 2003Date of Patent: August 2, 2005Assignee: NEC Compound Semiconductor Devices, Ltd.Inventors: Masahiro Tanomura, Hidenori Shimawaki, Yosuke Miyoshi, Fumio Harima
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Patent number: 6723664Abstract: This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 1012 eV −1cm−2 or less, which is brought by the above pre-treatment in the insulator film deposition process.Type: GrantFiled: January 10, 2002Date of Patent: April 20, 2004Assignees: NEC Compound Semiconductor Devices, Ltd., Anelva CorporationInventors: Hideki Matsumura, Akira Izumi, Atsushi Masuda, Yasunobu Nashimoto, Yosuke Miyoshi, Shuji Nomura, Kazuo Sakurai, Shouichi Aoshima
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Patent number: 6717192Abstract: A Schottky gate FET including a gate electrode having a gate extension, a drain electrode and a drain contact layer overlying a semi-insulating substrate, wherein the gate extension overlies at least part of the drain electrode and the drain contact layer. The vertical overlapping between the gate extension and the drain contact region prevents the current reduction to make the circuit module mounting the Schottky gate FET non-usable.Type: GrantFiled: January 6, 2003Date of Patent: April 6, 2004Assignee: NEC Compound Semiconductor Devices, Ltd.Inventor: Yosuke Miyoshi
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Publication number: 20030218187Abstract: A heterojunction bipolar transistor of the present invention is produced from a wafer including a substrate and a collector layer of a first conductivity type, a base layer of a second conductivity type and an emitter layer of the first conductivity type sequentially laminated on the substrate in this order. First, the wafer is etched up to a preselected depth of the collector layer via a first photoresist, which is formed at a preselected position on the emitter layer, serving as a mask. Subsequently, the collector layer etched with at least the sidewalls of the base layer and collector layer, which are exposed by the first etching step, and a second photoresist covering part of the surface of the collector layer contiguous with the sidewalls serving as a mask.Type: ApplicationFiled: May 29, 2003Publication date: November 27, 2003Inventors: Masahiro Tanomura, Hidenori Shimawaki, Yosuke Miyoshi, Fumio Harima
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Publication number: 20030132463Abstract: A Schottky gate FET including a gate electrode having a gate extension, a drain electrode and a drain contact layer overlying a semi-insulating substrate, wherein the gate extension overlies at least part of the drain electrode and the drain contact layer. The vertical overlapping between the gate extension and the drain contact region prevents the current reduction to make the circuit module mounting the Schottky gate FET non-usable.Type: ApplicationFiled: January 6, 2003Publication date: July 17, 2003Inventor: Yosuke Miyoshi
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Publication number: 20030006437Abstract: A dielectric film 4 made of a high dielectric material with a relative permittivity of 8 or more is laid between a field plate section 9 and a channel layer 2. Tantalum oxide (Ta2O5), for example, may be used as the high dielectric material.Type: ApplicationFiled: September 9, 2002Publication date: January 9, 2003Applicant: NEC CorporationInventors: Masashi Mizuta, Masaaki Kuzuhara, Yasunobu Nashimoto, Kazunori Asano, Yosuke Miyoshi, Yasunori Mochizuki
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Patent number: 6483135Abstract: A field effect transistor includes a semiconductor substrate with a channel layer being formed on its surface, a source electrode and a drain electrode formed at a distance on said semiconductor substrate, and a gate electrode placed between the source electrode and the drain electrode and making a Schottky junction with the channel layer. The gate electrode is provided with an overhanging field plate section and between the field plate section and the channel layer, there is laid a dielectric film. When the relative permittivity and the film thickness of the dielectric film are denoted by ∈ and t (nm), respectively, the following condition is satisfied 5≦∈<8, and 100<t<350.Type: GrantFiled: August 26, 1999Date of Patent: November 19, 2002Assignee: NEC Compound Semiconductor Devices, Ltd.Inventors: Masashi Mizuta, Masaaki Kuzuhara, Yasunobu Nashimoto, Kazunori Asano, Yosuke Miyoshi, Yasunori Mochizuki
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Patent number: 6462362Abstract: A bipolar transistor is disclosed, that comprises a collector layer of first conduction type, a base layer of second conduction type, formed on the collector layer, a prevention layer, formed on the base layer, for preventing carriers from being recombined, an emitter layer of first conduction type, formed on a first part of the prevention layer, and a base electrode, formed on a second part separated from the first part of the prevention layer.Type: GrantFiled: November 14, 2000Date of Patent: October 8, 2002Assignee: NEC CorporationInventor: Yosuke Miyoshi
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Publication number: 20020086557Abstract: This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 1012 eV −1cm−2 or less, which is brought by the above pre-treatment in the insulator film deposition process.Type: ApplicationFiled: January 10, 2002Publication date: July 4, 2002Inventors: Hideki Matsumura, Akira Izumi, Atsushi Masuda, Yasunobu Nashimoto, Yosuke Miyoshi, Shuji Nomura, Kazuo Sakurai, Shouichi Aoshima
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Publication number: 20020066909Abstract: A heterojunction bipolar transistor of the present invention is produced from a wafer including a substrate and a collector layer of a first conductivity type, a base layer of a second conductivity type and an emitter layer of the first conductivity type sequentially laminated on the substrate in this order. First, the wafer is etched up to a preselected depth of the collector layer via a first photoresist, which is formed at a preselected position on the emitter layer, serving as a mask. Subsequently, the collector layer etched with at least the sidewalls of the base layer and collector layer, which are exposed by the first etching step, and a second photoresist covering part of the surface of the collector layer contiguous with the sidewalls serving as a mask.Type: ApplicationFiled: December 3, 2001Publication date: June 6, 2002Applicant: NEC CorporationInventors: Masahiro Tanomura, Hidenori Shimawaki, Yosuke Miyoshi, Fumio Harima
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Patent number: 6349669Abstract: This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 1012 eV−1 cm−2 or less, which is brought by the above pre-treatment in the insulator film deposition process.Type: GrantFiled: June 23, 1998Date of Patent: February 26, 2002Assignees: NEC Corporation, Anelva CorporationInventors: Hideki Matsumura, Akira Izumi, Atsushi Masuda, Yasunobu Nashimoto, Yosuke Miyoshi, Shuji Nomura, Kazuo Sakurai, Shouichi Aoshima
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Patent number: 6325857Abstract: A CVD apparatus is provided, which is capable of cleaning the inside of a reaction chamber without affecting a catalyzer member after a CVD process is completed. This apparatus is comprised of a reaction chamber; a substrate stage located in the chamber, a substrate being placed on the stage; a catalyzer holder located in the chamber for holding a catalyzer member; the holder having an inner space in which the catalyzer member is fixed; the holder having an opening that communicates with the inner space and that faces toward the substrate placed on the stage; a shutter located in the chamber for closing the opening of the holder; a cleaning device for cleaning an inside of the chamber after a CVD process is completed; and a gas supply line for supplying a source gas into the inner space of the holder.Type: GrantFiled: November 4, 1999Date of Patent: December 4, 2001Assignee: NEC CorporationInventor: Yosuke Miyoshi
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Patent number: 6225241Abstract: To provide a fabrication method of compound semiconductor devices which can improve the problems of conventional MESFETs, such as the breakdown voltage degradation owing to increase of the gate leak current or the electron traps in the passivation film, the drain current decrease because of the gate-lag, or the threshold voltage dispersion caused by the interfacial tension, and easily restrain the emitter-size effect of conventional mesa type HBT without revising or complicating its epitaxial layer structure, a fabrication method according to the invention of a semiconductor device having a high-resistance film (9) covering a part of a surface other than electrodes (5, 6, and 7) of the semiconductor device comprises a step of depositing the high-resistance film (9) by way of catalytic CVD.Type: GrantFiled: January 15, 1998Date of Patent: May 1, 2001Assignee: NEC CorporationInventor: Yosuke Miyoshi
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Patent number: 6100571Abstract: A field control electrode 9 is formed over an insulating film 6 on a channel layer 2, between a gate electrode 5 and a drain electrode 8. Tantalum oxide (Ta.sub.2 O.sub.5), for example, may be used as the material for the insulating film 6.Type: GrantFiled: June 7, 1999Date of Patent: August 8, 2000Assignee: NEC CorporationInventors: Masashi Mizuta, Masaaki Kuzuhara, Yasunobu Nashimoto, Kazunori Asano, Yosuke Miyoshi, Yasunori Mochizuki
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Patent number: 6069094Abstract: This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 10.sup.12 eV .sup.-1 cm.sup.-2 or less, which is brought by the above pre-treatment in the insulator film deposition process.Type: GrantFiled: September 5, 1997Date of Patent: May 30, 2000Assignees: Hideki Matsumra, NEC Corporation, ANELVA CorporationInventors: Hideki Matsumura, Akira Izumi, Atsushi Masuda, Yasunobu Nashimoto, Yosuke Miyoshi, Shuji Nomura, Kazuo Sakurai, Shouichi Aoshima
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Patent number: 5942792Abstract: A multi-layer structure inserted onto an interface between a compound semiconductor region and a highly resistive material region includes an epitaxial silicon layer up to 1.5 nm thick in contact with the compound semiconductor region and an amorphous silicon layer from 1 to 10 nm thick in contact with the highly resistive material region and laminated on the epitaxial silicon layer.Type: GrantFiled: May 4, 1998Date of Patent: August 24, 1999Assignee: NEC CorporationInventor: Yosuke Miyoshi