Abstract: A pattern forming method of forming patterns on a plurality of shot regions on a substrate, the method including forming a film including a bank portion surrounding each of the plurality of shot regions on the substrate, and forming the pattern by placing an imprint material on an inside region surrounded by the bank portion on the film formed in the forming the film and bringing the imprint material into contact with a mold.

Abstract: In general, according to one embodiment, a semiconductor memory device includes: stacked layers including a plurality of interconnect layers and first insulating films alternately stacked in a first direction; a memory pillar extending and passing through the stacked layers in the first direction, wherein the memory pillar includes a semiconductor, a second insulating film provided between the semiconductor and the stacked layers, a charge storage film provided between the second insulating film and the stacked layers, a plurality of third insulating films provided between the charge storage film and the interconnect layers, and a plurality of fourth insulating films provided between the charge storage film and the first insulating films; and a fifth insulating film having a lower etching rate to hydrofluoric acid than the fourth insulating films, provided to cover side surface of the interconnect layers.

Abstract: A device including a mold holding unit that holds a mold, a mold driver that moves the mold holding unit, a substrate holding unit that holds a substrate, a substrate driver that moves the substrate holding unit, and a gas supply unit that supplies a gas to an imprint space between the mold and the substrate. A control unit causes an imprinting operation to be sequentially performed on a plurality of imprint regions. When a substrate moving direction is to be changed from a first to a second direction to move the substrate from a first to a second imprint region, the control unit causes the gas supply unit to supply the gas to the imprint space from the first and second directions during the imprinting operation being performed on the first imprint region and before the moving direction changes from the first to the second direction.

Abstract: A film forming method includes forming a first film to which a first pattern has been transferred by arranging a first curable composition on a substrate and shaping the first curable composition using a first mold having the first pattern, and forming a second film to which a second pattern has been transferred by arranging a second curable composition on the first film and shaping the second curable composition using a second mold having the second pattern.

Abstract: A three-dimensionally shaped coil can be manufactured at low cost and easily and uses a planar coil array. In the planar coil array, a flexible board comprises: a first planar coil that has a first spiral shape in which a first conductor is wound in a left-handed or right-handed manner with respect to a first center; and a second planar coil in which a second conductor in the same layer as the first conductor formed on the flexible board is wound with respect to a second center in the same manner of winding as the first coil, the second planar coil having an angular misalignment from the first spiral shape, being disposed adjacent to the first planar coil in a predetermined direction, and being electrically connected to the first planar coil. The flexible board is bent, thereby forming a three-dimensionally shaped coil.

Abstract: A semiconductor device includes: conductive layers stacked in a stacking direction; first and second conductor columns extending in the stacking direction and arranged in a first direction; an insulating column extending in the stacking direction and provided between the first and second conductor columns; a semiconductor layer formed along an outer peripheral surface of the insulating column, connected to the first and second conductor columns, and opposed to the conductive layers; and a memory film provided between the plurality of conductive layers and the semiconductor layer. In a cross-section intersecting with the stacking direction, at least a part of an outer peripheral surface of the semiconductor layer is formed approximately along a shape of a circle, an ellipse, or an oval, and at least parts of the first and second conductor columns are provided outside the shape of the circle, the ellipse, or the oval.

Abstract: In order to provide an imprint device and the like that can efficiently maintain a concentration of a gas when imprinting is sequentially performed, the imprint device includes: a mold holding unit configured to a mold; a substrate holding unit configured to holding a substrate; a gas supply unit configured to supply a gas to an imprint space between the mold and the substrate; and a control unit configured to control the gas supply unit and an imprinting operation, wherein the control unit is configured to sequentially perform imprinting on a plurality of imprint regions of the substrate, and the control unit is configured to, when a moving direction of the substrate between the imprint regions is changed from a first direction to a second direction, supply a gas to the imprint space in the first direction and the second direction using the gas supply unit during the imprinting operation on the imprint region before the change in the moving direction.

Abstract: A planarization apparatus configured to form a planarization layer on a substrate by bringing a planarization member into contact with a planarization material on the substrate includes a drive unit configured to move the planarization member and the substrate relative to each other, and a control unit configured to control the drive unit. The control unit controls a position of the planarization member relative to the substrate based on information about a defect on the planarization member and information about a tolerance region of the substrate where a defect is tolerated.

Abstract: An imprint apparatus that forms a pattern of a resin on a substrate that includes a plurality of substrate-side pattern regions by using a mold. The imprint apparatus includes a first mechanism applying a force to the mold to thereby deform a mold-side pattern region of the mold, a second mechanism heating the substrate-side pattern region to generate an uneven temperature distribution within the substrate-side pattern region for deforming the substrate-side pattern region, and obtaining shape difference information between the mold-side pattern region and the substrate-side pattern region, to control a shape of the mold-side pattern region by using the first mechanism based on the obtained shape difference information and controlling such that an uneven temperature distribution is formed in the substrate-side pattern region by using the second mechanism based on the obtained shape difference information.

Abstract: A planarizing method includes forming a first planarizing layer on a substrate by molding a curable composition using a first planarizing member, forming a second planarizing layer on the first planarizing layer by molding the curable composition using a second planarizing member, and determining, based on information representing performance of each of at least two planarizing members, a planarizing member to be used as the first planarizing member and a planarizing member to be used as the second planarizing member.

Abstract: The present invention has the effect of making it possible to produce 1,1,1-trifluoro-2,2-bisarylethane efficiently by a simple procedure by condensing a mixture of fluoral and hydrogen fluoride with an aryl compound under anhydrous conditions. The purity of the 1,1, 1-trifluoro-2, 2-bisarylethane obtained can be raised by a simple purification method such as crystallization or distillation. The obtained 1,1,1-trifluoro-2,2-bisarylethane can be increased in purity by a simple purification method such as crystallization operation or distillation.

Abstract: A suspension device includes a spring, a jack, a reservoir chamber which reserves the oil, a first pump, a second pump an opening and closing unit. The second pump is configured to cause the oil to flow into the housing chamber and to cause the oil to flow out from the housing chamber.

Abstract: According to an embodiment, a semiconductor memory devices includes a first memory string, a bit line, a source line, first and select gate lines, first to third word lines, and a control circuit. The first memory string includes a first selection transistor, first to third memory cells, and a second selection transistor. In a case where data is written to the first memory cell, the control circuit is configured to apply a first voltage to the bit line BL, apply a second voltage to the source line, apply a third voltage to the first select gate line, apply a fourth voltage to the second select gate line, apply a program voltage to the first word line, apply a fifth voltage to the second word line, and apply a sixth voltage to the third word line.

Abstract: A polyimide which is obtained by a reaction of an aromatic diamine having a 1,1,1-trifluoro-2,2-ethanediyl group (—C(CF3)H—), as a linkage skeleton, with a tetracarboxylic dianhydride is easily dissolved in an organic solvent and exhibits excellent film forming properties. In addition, the thus-obtained polyimide can be used for an optical film and a display device.

Abstract: An imprint method for forming a pattern of an imprint material on a substrate-side pattern region of a substrate by using a mold. The method includes deforming a partial region of the substrate, the partial region corresponding to the substrate-side pattern region, by irradiating the substrate with light that has passed through the mold and has a first wavelength different from light having a second wavelength that is used for curing the imprint material, and curing the imprint material by irradiating the light having the second wavelength in a state in which the substrate-side pattern region is deformed and the mold is contacted with the imprint material. The step of deforming includes forming an uneven temperature distribution on the substrate-side pattern region by irradiation of the light having the first wavelength with an uneven illumination distribution.

Abstract: A battery includes a positive electrode including powder of a positive electrode active material; a negative electrode; and an electrolyte. The powder of the positive electrode active material includes particles, which have a grain boundary and in which c axes of two regions sandwiching the grain boundary are in reflective symmetry, and the particles in the powder of the positive electrode active material have a content percentage of 50% or less.

Abstract: In one embodiment, a semiconductor memory device includes a stacked body of a first conductive films and first insulation films alternately stacked with each other in a first direction. A plurality of columnar bodies is in the stacked body. Each columnar body includes a first semiconductor part extending in the first direction, a first insulation part between the first semiconductor part and the stacked body, a second insulation part between the first insulation part and the stacked body, third insulation parts between the second insulation part and the first conductive films, and fourth insulation parts between the second insulation part and the first insulation films. Each second insulation part has first portions between the first insulation part and the first conductive films and second portions between the first insulation part and the first insulation film. The second portions are thinner than the first portions in a second direction.

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; and an organic photoelectric conversion layer provided between the first electrode and the second electrode. The organic photoelectric conversion layer has a domain of one organic semiconductor material therein. The domain of the one organic semiconductor material has a percolation structure in which the domain vertically extends in the organic photoelectric conversion layer in a film-thickness direction, and has a smaller domain length in a plane direction of the organic photoelectric conversion layer than a domain length in the film-thickness direction of the organic photoelectric conversion layer.

Abstract: A semiconductor storage device of an embodiment includes a first conductive layer, a second conductive layer, a first conductive pillar, a first semiconductor layer, and a first storage layer. The first conductive layer extends in a first direction. The second conductive layer is along the first conductive layer in a third direction intersecting the first direction. The second conductive layer extends in the first direction. The first conductive pillar penetrates the first conductive layer and the second conductive layer in the third direction. The first semiconductor layer is in contact with the first conductive layer and the second conductive layer. The first semiconductor layer faces the first conductive pillar in the first direction. The first storage layer is between the first semiconductor layer and the first conductive pillar.

Abstract: A damping force generation structure includes a damping force generation mechanism, and a damping force adjustment mechanism. The damping force adjustment mechanism includes a drive mechanism configured to be able to drive the valve body, and a coupling member having a first end fixed to the drive mechanism and a second end fixed to the fixing member, thereby coupling the drive mechanism and the fixing member. At least one of a position of the damping force generation mechanism relative to the fixing member, a position of the coupling member relative to the fixing member, and a position of the drive mechanism relative to the coupling member is adjustable in the advancing and retracting direction of the valve body by a position adjustment mechanism.